JPS6055101U - semiconductor switch - Google Patents
semiconductor switchInfo
- Publication number
- JPS6055101U JPS6055101U JP14625183U JP14625183U JPS6055101U JP S6055101 U JPS6055101 U JP S6055101U JP 14625183 U JP14625183 U JP 14625183U JP 14625183 U JP14625183 U JP 14625183U JP S6055101 U JPS6055101 U JP S6055101U
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- semiconductor substrate
- semiconductor switch
- line
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の半導体スイッチの構造の一例を示す図、
第２図は第１図のＦＥＴ近傍での電流分布を示す図、第
３図はこの考案による半導体スイッチの構造の一例を示
す図、第４図は第３図のＦＥＴ近傍での電流分布を示す
図、第５図および第６図はこの考案による半導体移相器
の他の実施例の構造因である。
図中、１は半導体基板、２は地導体、３は第１のＦＥＴ
、４は第２のＦＥＴ、５はソース電極、６は第１の出力
線路、７は第２の出力線路、８はストリップ導体、９は
ドレイン電極、１０は入力線路、１１はゲート電極、１
２は高インピーダンス線路、１３は低インピーダンス線
路、１４はバイアス回路、１５は細隙である。なお、図
中同一あるいは相当部分には同一符号を付して示しであ
る。FIG. 1 is a diagram showing an example of the structure of a conventional semiconductor switch.
Figure 2 shows the current distribution near the FET in Figure 1, Figure 3 shows an example of the structure of a semiconductor switch based on this invention, and Figure 4 shows the current distribution near the FET in Figure 3. The figures shown in FIGS. 5 and 6 show the structure of another embodiment of the semiconductor phase shifter according to this invention. In the figure, 1 is a semiconductor substrate, 2 is a ground conductor, and 3 is a first FET.
, 4 is a second FET, 5 is a source electrode, 6 is a first output line, 7 is a second output line, 8 is a strip conductor, 9 is a drain electrode, 10 is an input line, 11 is a gate electrode, 1
2 is a high impedance line, 13 is a low impedance line, 14 is a bias circuit, and 15 is a gap. Note that the same or equivalent parts in the figures are indicated by the same reference numerals.
Claims (1)
入力側線路の一端に、上記半導体基板と同一の半導体基
板に構成した複数個の電界効果トランジスタのドレイン
電極を接続し、かつ上記複数個の電界効果トランジスタ
それぞれのソース電極に、上記半導体基板に構成したマ
イクロストリップ線路から成る出力側線路をそれぞれ接
続し、さらに、上記電界効果トランジスタのゲート電極
にバイアス電圧を印加する手段を具備して構成される半
導体スイッチにおいて、ドレイン電極と入力側線路との
接続部に近接して、入力側線路のストリップ導体に、細
隙を設けたことを特徴とする半導体スイッチ。Connecting drain electrodes of a plurality of field effect transistors formed on the same semiconductor substrate as the semiconductor substrate to one end of an input side line consisting of a microstrip line formed on a semiconductor substrate, and each of the plurality of field effect transistors A semiconductor switch configured by connecting an output side line consisting of a microstrip line formed on the semiconductor substrate to the source electrode of the field effect transistor, and further comprising means for applying a bias voltage to the gate electrode of the field effect transistor. A semiconductor switch characterized in that a narrow gap is provided in the strip conductor of the input line in close proximity to the connection between the drain electrode and the input line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14625183U JPS6055101U (en) | 1983-09-21 | 1983-09-21 | semiconductor switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14625183U JPS6055101U (en) | 1983-09-21 | 1983-09-21 | semiconductor switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6055101U true JPS6055101U (en) | 1985-04-18 |
Family
ID=30325595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14625183U Pending JPS6055101U (en) | 1983-09-21 | 1983-09-21 | semiconductor switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6055101U (en) |
-
1983
- 1983-09-21 JP JP14625183U patent/JPS6055101U/en active Pending
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