JPS5942602U - semiconductor phase shifter - Google Patents
semiconductor phase shifterInfo
- Publication number
- JPS5942602U JPS5942602U JP13743082U JP13743082U JPS5942602U JP S5942602 U JPS5942602 U JP S5942602U JP 13743082 U JP13743082 U JP 13743082U JP 13743082 U JP13743082 U JP 13743082U JP S5942602 U JPS5942602 U JP S5942602U
- Authority
- JP
- Japan
- Prior art keywords
- fet
- phase shifter
- source
- drain
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来のローデツドライン形半導体移相器の構造
を示す斜視図、第２図、第３図はこの考案の一実施例を
示す斜視図、第４図、第５図はこの考案による他の実施
例を示す斜視図である。
図中１は半導体基板、２は地導体、３は主線路、４は分
岐線路、５はＦＥＴ、５はドレイン電極、７はソース電
極、８はゲート電極、９は貫通導体、１０はバイアス回
路、１１はＦＥＴ、１２は第１のドレイン電極、１３は
第２のドレイン電極、１４は第１のゲート電極、１５は
第２のゲート電極、１６は共通ソース電極である。なお
図中、同一あるいは相当部分には同一符号を付して示し
である。Fig. 1 is a perspective view showing the structure of a conventional loaded line type semiconductor phase shifter, Figs. 2 and 3 are perspective views showing an embodiment of this invention, and Figs. 4 and 5 are perspective views showing the structure of a conventional loaded line type semiconductor phase shifter. FIG. In the figure, 1 is a semiconductor substrate, 2 is a ground conductor, 3 is a main line, 4 is a branch line, 5 is an FET, 5 is a drain electrode, 7 is a source electrode, 8 is a gate electrode, 9 is a through conductor, and 10 is a bias circuit , 11 is a FET, 12 is a first drain electrode, 13 is a second drain electrode, 14 is a first gate electrode, 15 is a second gate electrode, and 16 is a common source electrode. In the drawings, the same or corresponding parts are designated by the same reference numerals.
Claims (1)
したマイクロストリップ線路を接続して成る半導体移相
器において、上記マイクロストリップ線路から成る主線
路に概略１／４波長間隔で、同シ＜マイク“ロストリッ
プ線路から成る２本の分岐線路の一端を接続し、上記２
本の分岐線路の他の一端はＦＥＴの第１のドレイン電極
と第２のドレイン電極にそれぞれ接続し、上記第１及び
第２の各トレイン電極に対し、共通に設けられた上記Ｆ
ＥＴのソース電極を接地し、上記ＦＥＴの第１のドレイ
ンとソース間の第１のゲート電極及ヒ第２のトレインと
ソース間の第２のゲート電極にバイアス電圧を印加する
手段を具備したことを特徴とする半導体移相器。In a semiconductor phase shifter formed by connecting an FET constructed on a semiconductor substrate and a microstrip line constructed on the semiconductor substrate, the same fibers are connected to the main line composed of the microstrip line at approximately 1/4 wavelength intervals. Connect one end of two branch lines consisting of loss-trip lines, and
The other end of the branch line is connected to the first drain electrode and the second drain electrode of the FET, respectively, and the FET, which is provided in common, is connected to the first and second drain electrodes of the FET.
The method further comprises means for grounding the source electrode of the ET and applying a bias voltage to the first gate electrode between the first drain and the source and the second gate electrode between the second train and the source of the FET. A semiconductor phase shifter featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13743082U JPS5942602U (en) | 1982-09-10 | 1982-09-10 | semiconductor phase shifter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13743082U JPS5942602U (en) | 1982-09-10 | 1982-09-10 | semiconductor phase shifter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5942602U true JPS5942602U (en) | 1984-03-19 |
| JPS633207Y2 JPS633207Y2 (en) | 1988-01-27 |
Family
ID=30308687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13743082U Granted JPS5942602U (en) | 1982-09-10 | 1982-09-10 | semiconductor phase shifter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5942602U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62125255A (en) * | 1985-11-25 | 1987-06-06 | Matsushita Electric Ind Co Ltd | Hot water supplier with additional burning function |
| JPS62125252A (en) * | 1985-11-25 | 1987-06-06 | Matsushita Electric Ind Co Ltd | Hot water supplier with additional burning function |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1174717A (en) * | 1997-06-23 | 1999-03-16 | Nec Corp | Phased array antenna system |
-
1982
- 1982-09-10 JP JP13743082U patent/JPS5942602U/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62125255A (en) * | 1985-11-25 | 1987-06-06 | Matsushita Electric Ind Co Ltd | Hot water supplier with additional burning function |
| JPS62125252A (en) * | 1985-11-25 | 1987-06-06 | Matsushita Electric Ind Co Ltd | Hot water supplier with additional burning function |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS633207Y2 (en) | 1988-01-27 |
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