JPS5981118U - transistor power amplifier - Google Patents

transistor power amplifier

Info

Publication number
JPS5981118U
JPS5981118U JP17808882U JP17808882U JPS5981118U JP S5981118 U JPS5981118 U JP S5981118U JP 17808882 U JP17808882 U JP 17808882U JP 17808882 U JP17808882 U JP 17808882U JP S5981118 U JPS5981118 U JP S5981118U
Authority
JP
Japan
Prior art keywords
power amplifier
transistor power
impedance matching
transistors
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17808882U
Other languages
Japanese (ja)
Inventor
池上 智仁
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP17808882U priority Critical patent/JPS5981118U/en
Publication of JPS5981118U publication Critical patent/JPS5981118U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のトランジスタ電力増幅器の上面図、第2
図はその回路図、第3図は本考案の第1の実施例の上面
図、第4図は本考案の第2の実施例の上面図である。 1・・・・・・プッシュプル動作トランジスタ収容用の
パッケージ、2・・・・・・伝送線路、3・・・・・・
整合用コンデンサ、4・・・・・・直流阻止コンデンサ
、5・・・・・−平衡−不平衡変換トランス、6・・・
・・・高周波阻止コイル、7、 8・・・・・・バイパ
スコンデンサ、11.12・・・・・・バイアス電圧入
力端子、15・・・・・・平衡−不平衡変換トランス取
付用ランド、16・・・・・・先端高周波短絡スタブ、
17・・・・・・高周波短絡コンデンサ、18・・・・
・・接地パターン、19.49・・曲溝体パターン、2
1.22・・・・・・電源電圧入力端子、31.32・
・・・・・ベースリード、41.42・・・・・・コレ
クタリード。 −讐3 函 埠4図
Figure 1 is a top view of a conventional transistor power amplifier; Figure 2 is a top view of a conventional transistor power amplifier;
3 is a top view of the first embodiment of the present invention, and FIG. 4 is a top view of the second embodiment of the present invention. 1...Package for accommodating push-pull operation transistor, 2...Transmission line, 3...
Matching capacitor, 4...DC blocking capacitor, 5...-Balanced-unbalanced conversion transformer, 6...
...High frequency blocking coil, 7, 8...Bypass capacitor, 11.12...Bias voltage input terminal, 15...Balanced-unbalanced conversion transformer mounting land, 16...Tip high frequency short circuit stub,
17... High frequency short circuit capacitor, 18...
...Ground pattern, 19.49...Curved groove pattern, 2
1.22...Power supply voltage input terminal, 31.32.
...Base lead, 41.42...Collector lead. -enemy 3 Hakanto 4

Claims (2)

【実用新案登録請求の範囲】[Scope of utility model registration request] (1)共通の容器に収容してあり互いにプツノ′ニブル
動作をする2つのトランジスタと、これらトランジスタ
に対する入力用及び出力用のインピータンス整合回路と
、これらインピータンス整合回路にそれぞれ接続される
入力用及び出力用の平衡−不平衡トランスと、前記イン
ピータンス整合回路の少なくとも一部分か形成しである
誘電体基板とを備え、前記平衡−不平衡トランスかそれ
ぞれ同軸・ケーフルで形成してあり、これら同軸ケーフ
ルの前記インピータンス整合回路に接続される側の端部
は前記誘電体上の導体に接続しであるトランジスタ電力
増幅器において、前記2つのトランジスタに対するコレ
クタ電圧及びヘース電圧が前記誘電体に形成した第1及
び第2の導体パターンを介してそれぞれ与えられること
を特徴とするトランジスタ電力増幅器。
(1) Two transistors housed in a common container and performing nibble operation with each other, impedance matching circuits for input and output to these transistors, and input transistors connected to these impedance matching circuits, respectively. and a balanced-unbalanced transformer for output, and a dielectric substrate forming at least a part of the impedance matching circuit, and each of the balanced-unbalanced transformers is formed of a coaxial cable and a cable, and these coaxial In the transistor power amplifier, the end of the cable connected to the impedance matching circuit is connected to a conductor on the dielectric, and the collector voltage and Hose voltage for the two transistors are connected to the conductor formed on the dielectric. A transistor power amplifier characterized in that the transistor power amplifier is provided through first and second conductor patterns, respectively.
(2)前項記載のトランジスタ電力増幅器において、前
記第1及び第2の導体パターンはそれぞれ隣接する他の
プッシュプル動作形のトランジスタ電力増幅回路に対す
るコレクタ電圧供給導体及びベース電圧供給導体である
ことを特徴とするトランジスタ電力増幅器。
(2) In the transistor power amplifier described in the preceding paragraph, the first and second conductor patterns are collector voltage supply conductors and base voltage supply conductors, respectively, for other adjacent push-pull operation type transistor power amplifier circuits. transistor power amplifier.
JP17808882U 1982-11-25 1982-11-25 transistor power amplifier Pending JPS5981118U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17808882U JPS5981118U (en) 1982-11-25 1982-11-25 transistor power amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17808882U JPS5981118U (en) 1982-11-25 1982-11-25 transistor power amplifier

Publications (1)

Publication Number Publication Date
JPS5981118U true JPS5981118U (en) 1984-06-01

Family

ID=30386740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17808882U Pending JPS5981118U (en) 1982-11-25 1982-11-25 transistor power amplifier

Country Status (1)

Country Link
JP (1) JPS5981118U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006229462A (en) * 2005-02-16 2006-08-31 Matsushita Electric Ind Co Ltd High output power amplifier module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006229462A (en) * 2005-02-16 2006-08-31 Matsushita Electric Ind Co Ltd High output power amplifier module
JP4674097B2 (en) * 2005-02-16 2011-04-20 パナソニック株式会社 High output power amplification module

Similar Documents

Publication Publication Date Title
JPS5981118U (en) transistor power amplifier
JPS594189U (en) High frequency coaxial connection body
JPS6221617U (en)
JPS6137619U (en) push pull amplifier
JPS5869947U (en) microwave semiconductor circuit
JPS5942602U (en) semiconductor phase shifter
JPS5816245Y2 (en) Bias circuit for ultra-high frequency semiconductor devices
JPS6399604A (en) High frequency semiconductor device
JPS59166510U (en) High frequency high power transistor amplifier
JPS60166137U (en) common mode coil
JPS60160629U (en) High frequency coil matching circuit
JPS60149202U (en) Microwave integrated circuit device
JPS5963540U (en) antenna matching device
JPS6083247U (en) Microwave integrated circuit transistor circuit
JPS6253815U (en)
JPS58123605U (en) Microstripline diode phase shifter
JPS59157307U (en) matching circuit
JPS60160604U (en) Choke circuit for microwave band amplifier
JPH01296702A (en) Semiconductor package
JPH0344303U (en)
JPS5991717A (en) Microwave circuit device
JPS58138415U (en) High frequency mixer
JPS5944050U (en) transistor power amplifier circuit
JPS60144265U (en) High frequency mounting board
JPS59145041U (en) Ultra high frequency IC device