JPS59166510U - High frequency high power transistor amplifier - Google Patents
High frequency high power transistor amplifierInfo
- Publication number
- JPS59166510U JPS59166510U JP4560584U JP4560584U JPS59166510U JP S59166510 U JPS59166510 U JP S59166510U JP 4560584 U JP4560584 U JP 4560584U JP 4560584 U JP4560584 U JP 4560584U JP S59166510 U JPS59166510 U JP S59166510U
- Authority
- JP
- Japan
- Prior art keywords
- transistor amplifier
- power transistor
- high frequency
- transistor
- high power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Structure Of Printed Boards (AREA)
- Inorganic Insulating Materials (AREA)
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は本考案の第１の実施例を示す図で、ａ゛ −
は平面図、ｂはその等価回路図である。図において１は
トランジスタ、２．２′は高誘電率誘電体基板、４はケ
ース、５． ５’は入出力コネクタであり、ｃｌ、 ｃ
２． ｃ３． ｃ、は平列容量、Ｌｌ、 Ｌ２． Ｌ３
は直列容量、Ｚ工は１７４波長変換器、ｃｏはＤＣブロ
ック、ＲＦショート容量、Ｚｏはチョーク線路を示す。
第２図は本考案の第２の実施例を示す平面図で、第１と
同一構成要素は同一番号で示す。３．３′は別の誘電体
基板、２１〜２３．２１’〜２３′は並列容量、３１〜
３３．３１’〜３３′は直列インダクタである。
第３図は本考案の第３の実施例を示す図で、ａは平面図
、ｂは一部拡大斜視図である。２０〜２０′は並列容量
、３０〜３０′はチップ型インダクタ、３５．３５’は
チップ状誘電体、３６゜３６′はインダクタ導体を示す
。FIG. 1 is a diagram showing the first embodiment of the present invention.
is a plan view, and b is its equivalent circuit diagram. In the figure, 1 is a transistor, 2.2' is a high-permittivity dielectric substrate, 4 is a case, and 5. 5' is the input/output connector, cl, c
2. c3. c, is the parallel capacitance, Ll, L2. L3
is a series capacitor, Z is a 174 wavelength converter, co is a DC block, RF short capacitor, and Zo is a choke line. FIG. 2 is a plan view showing a second embodiment of the present invention, in which the same components as the first embodiment are designated by the same numbers. 3.3' is another dielectric substrate, 21-23.21'-23' are parallel capacitors, 31-23' are parallel capacitances,
33. 31' to 33' are series inductors. FIG. 3 shows a third embodiment of the present invention, in which a is a plan view and b is a partially enlarged perspective view. 20 to 20' are parallel capacitors, 30 to 30' are chip-type inductors, 35.35' is a chip-shaped dielectric, and 36°36' is an inductor conductor.
Claims (1)
接続される少くとも１個以上の並列容量あるいは少くと
も１個以上のｌハ波長インピーダンス変換回路を含む入
出力整合回路が０≦Ｘ≦１゜０、０．４≦ｙ＜２．０の
範囲で作られた２（Ｓｒｘ−ｘＣａｘ）Ｏ−ｙＮｂ２０
５誘電体基板上にＩＣ化されてなることを特徴とする高
周波高出力トランジスタ増幅器。An input/output matching circuit including a transistor provided on a ground conductor and at least one parallel capacitor connected to the transistor or at least one wavelength impedance conversion circuit is 0≦X≦1゜0, 2(Srx-xCax)O-yNb20 made in the range of 0.4≦y<2.0
5. A high frequency, high output transistor amplifier characterized in that it is formed into an IC on a dielectric substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4560584U JPS59166510U (en) | 1984-03-29 | 1984-03-29 | High frequency high power transistor amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4560584U JPS59166510U (en) | 1984-03-29 | 1984-03-29 | High frequency high power transistor amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59166510U true JPS59166510U (en) | 1984-11-08 |
Family
ID=30176129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4560584U Pending JPS59166510U (en) | 1984-03-29 | 1984-03-29 | High frequency high power transistor amplifier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59166510U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015042001A (en) * | 2013-08-23 | 2015-03-02 | 住友電工デバイス・イノベーション株式会社 | Semiconductor device |
-
1984
- 1984-03-29 JP JP4560584U patent/JPS59166510U/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015042001A (en) * | 2013-08-23 | 2015-03-02 | 住友電工デバイス・イノベーション株式会社 | Semiconductor device |
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