JPS59104601U

JPS59104601U - microwave filter circuit

Info

Publication number: JPS59104601U
Application number: JP19953082U
Authority: JP
Inventors: 茂渡辺; 富田　直孝; 堀　重和
Original assignee: 株式会社東芝
Priority date: 1982-12-28
Filing date: 1982-12-28
Publication date: 1984-07-14

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Brief explanation of drawings]

第１図は従来のフィルタ回路の一例を示す結線図、第２
図は第１図に示した回路の周波数特性例を示す曲線図、
第３図は第１図に示した回路をＧａＡｓ等の半導体半絶
縁性基板上に構成したー★施例を示す六ターン図、第４
−は第３図の接地のボンディング・ワイヤのインダクタ
を考慮した回路図、第５図は第４図に示した回路で、ボ
ンディングやワイヤのインダクタンスの変動による周波
数特性の変化を示した特性例を示す図、第６図は本考案
の実施例を示すパターン図、第７図は第６図のパターン
の等価回路を示す結線図、第８図は本考案を実施した場
合のホンディング・ワイヤのインダクタンスの変動によ
る周波数特性の変化例を示す特性図である。１１・・・ＧａＡｓ等の半導体半絶縁性基板、１２−ａ
〜１２−Ｃ・・・インダクタのパターン、１３−ａ〜１
３−ｄ・・・個別電極パターン、１′４・・・入力端子
パターン、１５・・・出力端子パターン、１６・・・ボ
ンディング・ワイヤ、３１・・・共通電極パターン。第１図第３図、１１第４図第５図　（ａ）（ｂ）　　− 第６図（ａ）第７図第８図Figure 1 is a wiring diagram showing an example of a conventional filter circuit, Figure 2 is a wiring diagram showing an example of a conventional filter circuit.
The figure is a curve diagram showing an example of the frequency characteristics of the circuit shown in Figure 1.
Figure 3 is a six-turn diagram showing an example of the circuit shown in Figure 1 constructed on a semiconductor semi-insulating substrate such as GaAs.
- is a circuit diagram that takes into account the inductor of the ground bonding wire in Figure 3, and Figure 5 is the circuit shown in Figure 4, and is an example of the characteristics showing changes in frequency characteristics due to variations in bonding and wire inductance. Fig. 6 is a pattern diagram showing an embodiment of the present invention, Fig. 7 is a wiring diagram showing an equivalent circuit of the pattern of Fig. 6, and Fig. 8 is a diagram of the honding wire when the present invention is implemented. FIG. 3 is a characteristic diagram showing an example of a change in frequency characteristics due to a change in inductance. 11... Semiconductor semi-insulating substrate such as GaAs, 12-a
~12-C...Inductor pattern, 13-a~1
3-d...Individual electrode pattern, 1'4...Input terminal pattern, 15...Output terminal pattern, 16...Bonding wire, 31...Common electrode pattern. Figure 1 Figure 3, 11 Figure 4 Figure 5 (a) (b) - Figure 6 (a) Figure 7 Figure 8

Claims

[Scope of utility model registration request]

(1) A microwave filter circuit configured on a semiconductor semi-insulating substrate, in which a plurality of inductors each have a first electrode connected to an interconnection point of a plurality of inductors connected between an input terminal and an output terminal. A microwave filter circuit characterized in that a second electrode of the capacitor is formed as a common electrode, and the common electrode is grounded by a bonding wire.

(2) A first electrode is provided on the common electrode to form a capacitor, the first electrode of the capacitor is grounded by a bonding wire, and the inductor of the capacitor and the bonding φ wire is connected at a temperature near the cutoff frequency. Utility model registration claim 1 characterized by series resonance
The microwave filter circuit described in Section 1.

(3) Registration of a utility model characterized in that an inductor and a capacitor connected in series are formed instead of the plurality of inductors, and an inductor and a capacitor connected in parallel are formed instead of the plurality of capacitors. A microwave filter circuit according to claim 1 or 2.