JPS62125017U - - Google Patents

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Publication number
JPS62125017U
JPS62125017U JP1044786U JP1044786U JPS62125017U JP S62125017 U JPS62125017 U JP S62125017U JP 1044786 U JP1044786 U JP 1044786U JP 1044786 U JP1044786 U JP 1044786U JP S62125017 U JPS62125017 U JP S62125017U
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
grounded
whose
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1044786U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1044786U priority Critical patent/JPS62125017U/ja
Publication of JPS62125017U publication Critical patent/JPS62125017U/ja
Pending legal-status Critical Current

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  • Microwave Amplifiers (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図、第2図はこの考案の一実施例による増
幅器の一実施例を示す図、第3図は従来の増幅器
の一実施例を示す図である。 第1図、第2図、第3図において、1はFET
、4はソース、11はDCバイアス端子、12は
第2のバイパスコンデンサ、13は抵抗である。
なお、図中同一符号は同一または相当部分を示す
1 and 2 are diagrams showing an embodiment of an amplifier according to an embodiment of this invention, and FIG. 3 is a diagram showing an embodiment of a conventional amplifier. In Figures 1, 2, and 3, 1 is an FET.
, 4 is a source, 11 is a DC bias terminal, 12 is a second bypass capacitor, and 13 is a resistor.
Note that the same reference numerals in the figures indicate the same or corresponding parts.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 電界効果トランジスタと、前記電界効果トラン
ジスタのゲート端子に接続され、直流的に接地さ
れた第1のマイクロストリツプ線路と、前記電界
効果トランジスタのドレイン端子に接続された第
2のマイクロストリツプ線路と、前記電界効果ト
ランジスタのソース端子に接続され、他端が接地
されたコンデンサと、前記電界トランジスタのソ
ース端子に接続され、他端が接地された抵抗とし
て構成される増幅器において、前記抵抗を一端が
共通の電極を有し、他端はそれぞれ独立した電極
を有する並列の薄膜抵抗で形成したことを特徴と
する増幅器。
A field effect transistor, a first microstrip line connected to the gate terminal of the field effect transistor and grounded in terms of direct current, and a second microstrip line connected to the drain terminal of the field effect transistor. In the amplifier configured as a line, a capacitor connected to the source terminal of the field effect transistor and whose other end is grounded, and a resistor connected to the source terminal of the field effect transistor and whose other end is grounded, the resistor is An amplifier characterized in that it is formed of parallel thin film resistors having a common electrode at one end and independent electrodes at the other end.
JP1044786U 1986-01-28 1986-01-28 Pending JPS62125017U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1044786U JPS62125017U (en) 1986-01-28 1986-01-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1044786U JPS62125017U (en) 1986-01-28 1986-01-28

Publications (1)

Publication Number Publication Date
JPS62125017U true JPS62125017U (en) 1987-08-08

Family

ID=30796746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1044786U Pending JPS62125017U (en) 1986-01-28 1986-01-28

Country Status (1)

Country Link
JP (1) JPS62125017U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03188704A (en) * 1989-12-18 1991-08-16 Mitsubishi Electric Corp Microwave integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03188704A (en) * 1989-12-18 1991-08-16 Mitsubishi Electric Corp Microwave integrated circuit

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