JPS6298326U

JPS6298326U -

Info

Publication number: JPS6298326U
Application number: JP19150285U
Authority: JP
Priority date: 1985-12-11
Filing date: 1985-12-11
Publication date: 1987-06-23

Description

[Brief explanation of drawings]

第１図はこの考案の一実施例のマイクロ波半導
体増幅器の構造を示す図、第２図は、第１図の等
価回路、第３図は従来のマイクロ波半導体増幅器
の構造を示す図、第４図は第３図の等価回路であ
る。１は半導体基板、７は電界効果トランジスタ、
１１はバイアス回路、１２はバイアス線路、１４
はキヤパシタ、１５……バイアス端子、１７は可
変抵抗用電界効果トランジスタ、１９，２１は可
変抵抗用電界効果トランジスタのゲート電極、ゲ
ートバイアス端子である。なお、図中、同一符号
は同一、又は相当部分を示す。 FIG. 1 is a diagram showing the structure of a microwave semiconductor amplifier according to an embodiment of the invention, FIG. 2 is an equivalent circuit of FIG. 1, and FIG. 3 is a diagram showing the structure of a conventional microwave semiconductor amplifier. FIG. 4 is an equivalent circuit of FIG. 3. 1 is a semiconductor substrate, 7 is a field effect transistor,
11 is a bias circuit, 12 is a bias line, 14
15 is a capacitor, 15 is a bias terminal, 17 is a variable resistance field effect transistor, and 19 and 21 are gate electrodes and gate bias terminals of the variable resistance field effect transistor. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims

[Claims for Utility Model Registration] It is constructed by integrally forming lumped constant elements such as field effect transistors, lines, resistors, and capacitors on a semiconductor substrate. In the microwave semiconductor amplifier, a bias voltage is applied to the field effect transistor. A microwave semiconductor amplifier characterized in that a variable resistance element whose resistance value changes by controlling the gate bias voltage of a field effect transistor is used as a resistance element in a bias circuit.