JPS6214819U - - Google Patents
Info
- Publication number
- JPS6214819U JPS6214819U JP10502385U JP10502385U JPS6214819U JP S6214819 U JPS6214819 U JP S6214819U JP 10502385 U JP10502385 U JP 10502385U JP 10502385 U JP10502385 U JP 10502385U JP S6214819 U JPS6214819 U JP S6214819U
- Authority
- JP
- Japan
- Prior art keywords
- fet
- electrode
- gate
- semiconductor resistor
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
Landscapes
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
- Control Of Amplification And Gain Control (AREA)
Description
第１図はこの考案の一実施例を示すパターン図
、第２図は第１図に示すものの等価回路を示す回
路図、第３図は、ノーマリ・オフ形のＦＥＴのＶ
―Ｉ特性を示した図、第４図は、従来のモノリシ
ツク・マイクロ波、ＦＥＴ増幅器を示すパターン
図、第５図は第４図に示すものの等価回路を表す
回路図、第６図はノーマリ・オフ型のＦＥＴのＶ
―Ｉ特性を示した図、第７図は第５図の回路を直
流的に見た場合の回路図である。
図において１は第１のＦＥＴ、２は第１のＦＥ
Ｔのゲート電極、３は第１のＦＥＴのソース電極
、４は第１のＦＥＴのドレイン電極、５は半導体
抵抗、６は薄膜キヤパシタ、７は入力回路、８は
出力回路、９はＧａＡｓ等の半導体基板、１０は
ノーマリ・オフ型のＦＥＴ、１１は制御電極、１
２は接地電極、１３は薄膜キヤパシタ、１４は半
導体抵抗である。なお、各図中同一符号は同一ま
たは相当部分を示す。
Fig. 1 is a pattern diagram showing an embodiment of this invention, Fig. 2 is a circuit diagram showing an equivalent circuit of the one shown in Fig. 1, and Fig. 3 is a V of a normally-off type FET.
Figure 4 is a pattern diagram showing the conventional monolithic microwave FET amplifier, Figure 5 is a circuit diagram showing the equivalent circuit of the one shown in Figure 4, and Figure 6 is a diagram showing the I characteristic. V of off-type FET
7 is a circuit diagram of the circuit shown in FIG. 5 viewed from a direct current perspective. In the figure, 1 is the first FET, 2 is the first FE
3 is the source electrode of the first FET, 4 is the drain electrode of the first FET, 5 is the semiconductor resistor, 6 is the thin film capacitor, 7 is the input circuit, 8 is the output circuit, 9 is GaAs, etc. A semiconductor substrate, 10 a normally-off type FET, 11 a control electrode, 1
2 is a ground electrode, 13 is a thin film capacitor, and 14 is a semiconductor resistor. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
極に接続された半導体抵抗と、この半導体抵抗お
よび前記の第１のＦＥＴのドレイン電極に接続さ
れた薄膜キヤパシタと、第１のＦＥＴのソース電
極および接地電極に接続された薄膜キヤパシタと
、前記の第１のＦＥＴのソース電極、前記の接地
電極および制御電極によつて構成されるノーマリ
・オフ型のＦＥＴと、前記の第１のＦＥＴのゲー
ト電極および前記の接地電極に接続された半導体
抵抗と、前記の第１のＦＥＴのゲート電極に接続
された入力回路と、前記の第１のＦＥＴのドレイ
ン電極に接続された出力回路とを、同一の半導体
基板上に形成したことを特徴とする、モノリシツ
ク・マイクロ波ＦＥＴ増幅器。 a first FET, a semiconductor resistor connected to the gate electrode of the first FET, a thin film capacitor connected to the semiconductor resistor and the drain electrode of the first FET, and a source electrode of the first FET. and a thin film capacitor connected to a ground electrode, a normally-off type FET constituted by the source electrode of the first FET, the ground electrode and the control electrode, and the gate of the first FET. A semiconductor resistor connected to the electrode and the ground electrode, an input circuit connected to the gate electrode of the first FET, and an output circuit connected to the drain electrode of the first FET are the same. A monolithic microwave FET amplifier, characterized in that it is formed on a semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10502385U JPS6214819U (en) | 1985-07-10 | 1985-07-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10502385U JPS6214819U (en) | 1985-07-10 | 1985-07-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6214819U true JPS6214819U (en) | 1987-01-29 |
Family
ID=30979059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10502385U Pending JPS6214819U (en) | 1985-07-10 | 1985-07-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6214819U (en) |
-
1985
- 1985-07-10 JP JP10502385U patent/JPS6214819U/ja active Pending
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