JPS617117U - Monolithic FET amplifier - Google Patents
Monolithic FET amplifierInfo
- Publication number
- JPS617117U JPS617117U JP9095384U JP9095384U JPS617117U JP S617117 U JPS617117 U JP S617117U JP 9095384 U JP9095384 U JP 9095384U JP 9095384 U JP9095384 U JP 9095384U JP S617117 U JPS617117 U JP S617117U
- Authority
- JP
- Japan
- Prior art keywords
- fet
- fet amplifier
- monolithic
- monolithic fet
- schottky diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は従来のモノリシツクFET増幅器のパターン図
、第2図はこの考案の一実施例によるモノリシックFE
T増幅器のノーでターン図、第3図はこの考案の中のシ
ョットキーダイオード容量を示すパターン図、第4図は
このショットキーダイオード容量の電圧依存性を示す図
である。
1はFET,2はソース電極、3はドレイン電極、4は
ゲート電極、5aは入力側整合インダクタンス、5bは
出力側整合インダクタンス、7はGaAs等の半導体基
板、8aは入力側整合ショットキーダイオード容量、8
bは出力側整合ショットキーダイオード容量、10はシ
ョットキー接合金属、11は半導体活性層、12はオー
ミツク接合金属である。
なお、図中、同一符号は同一、又は相当部分を示す。Figure 1 is a pattern diagram of a conventional monolithic FET amplifier, and Figure 2 is a monolithic FE according to an embodiment of this invention.
FIG. 3 is a pattern diagram showing the Schottky diode capacitance in this invention, and FIG. 4 is a diagram showing the voltage dependence of this Schottky diode capacitance. 1 is a FET, 2 is a source electrode, 3 is a drain electrode, 4 is a gate electrode, 5a is an input side matching inductance, 5b is an output side matching inductance, 7 is a semiconductor substrate such as GaAs, 8a is an input side matching Schottky diode capacitance , 8
b is an output side matching Schottky diode capacitance, 10 is a Schottky junction metal, 11 is a semiconductor active layer, and 12 is an ohmic junction metal. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
に接続された整合インダクタンス、およびその整合イン
ダクタンスに接続されたショットキーダイオード容量に
より構成された入−出力側整合回路とを、同一半導体基
板上に形成したことを特徴とするモノリシツクFET増
幅器。A FET, a matching inductance connected to the gate and drain electrodes of this FET, and an input-output matching circuit configured by a Schottky diode capacitor connected to the matching inductance are installed on the same semiconductor substrate. A monolithic FET amplifier characterized in that:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9095384U JPS617117U (en) | 1984-06-19 | 1984-06-19 | Monolithic FET amplifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9095384U JPS617117U (en) | 1984-06-19 | 1984-06-19 | Monolithic FET amplifier |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS617117U true JPS617117U (en) | 1986-01-17 |
Family
ID=30646413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9095384U Pending JPS617117U (en) | 1984-06-19 | 1984-06-19 | Monolithic FET amplifier |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS617117U (en) |
-
1984
- 1984-06-19 JP JP9095384U patent/JPS617117U/en active Pending
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