JPS617117U

JPS617117U - Monolithic FET amplifier

Info

Publication number: JPS617117U
Application number: JP9095384U
Authority: JP
Inventors: 邦昭三井
Original assignee: 三菱電機株式会社
Priority date: 1984-06-19
Filing date: 1984-06-19
Publication date: 1986-01-17

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Brief explanation of the drawing]

第１図は従来のモノリシツクＦＥＴ増幅器のパターン図
、第２図はこの考案の一実施例によるモノリシックＦＥ
Ｔ増幅器のノーでターン図、第３図はこの考案の中のシ
ョットキーダイオード容量を示すパターン図、第４図は
このショットキーダイオード容量の電圧依存性を示す図
である。１はＦＥＴ，２はソース電極、３はドレイン電極、４は
ゲート電極、５ａは入力側整合インダクタンス、５ｂは
出力側整合インダクタンス、７はＧａＡｓ等の半導体基
板、８ａは入力側整合ショットキーダイオード容量、８
ｂは出力側整合ショットキーダイオード容量、１０はシ
ョットキー接合金属、１１は半導体活性層、１２はオー
ミツク接合金属である。なお、図中、同一符号は同一、又は相当部分を示す。Figure 1 is a pattern diagram of a conventional monolithic FET amplifier, and Figure 2 is a monolithic FE according to an embodiment of this invention.
FIG. 3 is a pattern diagram showing the Schottky diode capacitance in this invention, and FIG. 4 is a diagram showing the voltage dependence of this Schottky diode capacitance. 1 is a FET, 2 is a source electrode, 3 is a drain electrode, 4 is a gate electrode, 5a is an input side matching inductance, 5b is an output side matching inductance, 7 is a semiconductor substrate such as GaAs, 8a is an input side matching Schottky diode capacitance , 8
b is an output side matching Schottky diode capacitance, 10 is a Schottky junction metal, 11 is a semiconductor active layer, and 12 is an ohmic junction metal. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims

[Scope of utility model registration request]

A FET, a matching inductance connected to the gate and drain electrodes of this FET, and an input-output matching circuit configured by a Schottky diode capacitor connected to the matching inductance are installed on the same semiconductor substrate. A monolithic FET amplifier characterized in that: