JPS6280418U - - Google Patents
Info
- Publication number
- JPS6280418U JPS6280418U JP17157585U JP17157585U JPS6280418U JP S6280418 U JPS6280418 U JP S6280418U JP 17157585 U JP17157585 U JP 17157585U JP 17157585 U JP17157585 U JP 17157585U JP S6280418 U JPS6280418 U JP S6280418U
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- bias
- amplification
- amplification transistor
- amplifier circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003321 amplification Effects 0.000 claims description 5
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Amplifiers (AREA)
Description
第１図は本考案の実施例の回路図、第２図は従
来のトランジスタ増幅回路の例を示す図である。
主要部分の符号の説明、１……増幅用トランジ
スタ、２……ベースインピーダンス、４……エミ
ツタ抵抗、２１……バイアス用トランジスタ。
FIG. 1 is a circuit diagram of an embodiment of the present invention, and FIG. 2 is a diagram showing an example of a conventional transistor amplifier circuit. Explanation of the symbols of the main parts: 1...Amplification transistor, 2...Base impedance, 4...Emitter resistance, 21...Bias transistor.
Claims (1)
この増幅用トランジスタと逆導電型でかつエミツ
タフオロワ型式とされたバイアス用トランジスタ
とを有し、このバイアス用トランジスタのベース
にバイアス電圧を印加しそのエミツタフオロワ出
力を前記増幅用トランジスタのベースバイアスと
することを特徴とするトランジスタ増幅回路。 (2) 前記増幅用トランジスタと前記バイアス用
トランジスタとは熱的に短絡された構成とされて
いることを特徴とする実用新案登録請求の範囲第
１項のトランジスタ増幅回路。[Scope of claims for utility model registration] (1) A grounded emitter type amplification transistor,
The amplification transistor has a bias transistor of a conductivity type opposite to the emitter follower type, and a bias voltage is applied to the base of the bias transistor, and the output of the emitter follower is used as the base bias of the amplification transistor. Characteristic transistor amplifier circuit. (2) The transistor amplifier circuit according to claim 1, wherein the amplification transistor and the bias transistor are thermally short-circuited.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17157585U JPS6280418U (en) | 1985-11-07 | 1985-11-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17157585U JPS6280418U (en) | 1985-11-07 | 1985-11-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6280418U true JPS6280418U (en) | 1987-05-22 |
Family
ID=31107327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17157585U Pending JPS6280418U (en) | 1985-11-07 | 1985-11-07 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6280418U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02131002A (en) * | 1988-11-10 | 1990-05-18 | Rohm Co Ltd | Bias power supply circuit |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58141012A (en) * | 1982-02-16 | 1983-08-22 | Matsushita Electric Ind Co Ltd | Bias circuit |
-
1985
- 1985-11-07 JP JP17157585U patent/JPS6280418U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58141012A (en) * | 1982-02-16 | 1983-08-22 | Matsushita Electric Ind Co Ltd | Bias circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02131002A (en) * | 1988-11-10 | 1990-05-18 | Rohm Co Ltd | Bias power supply circuit |
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