JPS63120419U - - Google Patents
Info
- Publication number
- JPS63120419U JPS63120419U JP1001687U JP1001687U JPS63120419U JP S63120419 U JPS63120419 U JP S63120419U JP 1001687 U JP1001687 U JP 1001687U JP 1001687 U JP1001687 U JP 1001687U JP S63120419 U JPS63120419 U JP S63120419U
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- semiconductor device
- transistor
- drain
- input circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
Description
第１図は本考案の半導体装置の入力回路の一実
施例の回路図、第２図は第１図示の回路の入出力
信号波形図、第３図は本考案回路の使用状態を説
明するための図、第４図は従来回路の一例の回路
図、第５図は従来回路の入出力信号波形図である
。
図中において、３１はＦＥＴ（電界効果トラン
ジスタ）、３３は抵抗である。
Fig. 1 is a circuit diagram of one embodiment of the input circuit of the semiconductor device of the present invention, Fig. 2 is an input/output signal waveform diagram of the circuit shown in Fig. 1, and Fig. 3 is for explaining the usage state of the circuit of the present invention. FIG. 4 is a circuit diagram of an example of a conventional circuit, and FIG. 5 is an input/output signal waveform diagram of the conventional circuit. In the figure, 31 is an FET (field effect transistor), and 33 is a resistor.
Claims (1)
ンジスタのソースに該第１の電圧よりも高い第２
の電圧と、該第１の電圧よりも低い第３の電圧と
の間で振幅する入力信号をうけ、該入力信号がス
レツシヨールド電圧を越えたときにのみ導通し、
該トランジスタのドレインから前記第１の電圧と
それよりも高い電圧の間で振幅するデイジタル信
号を半導体装置に供給する半導体装置の入力回路
において、 該トランジスタのドレインに一端を接続され、
他端に前記第１の電圧が印加された抵抗を有して
なる半導体装置の入力回路。[Claims for Utility Model Registration] A second voltage higher than the first voltage is applied to the source of a field effect transistor whose gate is applied with a first voltage.
and a third voltage lower than the first voltage, and conducts only when the input signal exceeds a threshold voltage;
In an input circuit of a semiconductor device that supplies a digital signal that swings between the first voltage and a higher voltage from the drain of the transistor to the semiconductor device, one end is connected to the drain of the transistor;
An input circuit for a semiconductor device comprising a resistor to which the first voltage is applied to the other end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1001687U JPS63120419U (en) | 1987-01-27 | 1987-01-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1001687U JPS63120419U (en) | 1987-01-27 | 1987-01-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63120419U true JPS63120419U (en) | 1988-08-04 |
Family
ID=30795919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1001687U Pending JPS63120419U (en) | 1987-01-27 | 1987-01-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63120419U (en) |
-
1987
- 1987-01-27 JP JP1001687U patent/JPS63120419U/ja active Pending
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