JPH03358B2 - - Google Patents

Info

Publication number
JPH03358B2
JPH03358B2 JP62018164A JP1816487A JPH03358B2 JP H03358 B2 JPH03358 B2 JP H03358B2 JP 62018164 A JP62018164 A JP 62018164A JP 1816487 A JP1816487 A JP 1816487A JP H03358 B2 JPH03358 B2 JP H03358B2
Authority
JP
Japan
Prior art keywords
sio
carbon black
fine powder
water cooling
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62018164A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63190800A (ja
Inventor
Toshio Nakada
Fumio Takemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Carbon Co Ltd
Original Assignee
Tokai Carbon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Carbon Co Ltd filed Critical Tokai Carbon Co Ltd
Priority to JP62018164A priority Critical patent/JPS63190800A/ja
Publication of JPS63190800A publication Critical patent/JPS63190800A/ja
Publication of JPH03358B2 publication Critical patent/JPH03358B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP62018164A 1987-01-30 1987-01-30 ＳｉＣウイスカ−の製造方法 Granted JPS63190800A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62018164A JPS63190800A (ja) 1987-01-30 1987-01-30 ＳｉＣウイスカ−の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62018164A JPS63190800A (ja) 1987-01-30 1987-01-30 ＳｉＣウイスカ−の製造方法

Publications (2)

Publication Number Publication Date
JPS63190800A JPS63190800A (ja) 1988-08-08
JPH03358B2 true JPH03358B2 (enrdf_load_stackoverflow) 1991-01-07

Family

ID=11963967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62018164A Granted JPS63190800A (ja) 1987-01-30 1987-01-30 ＳｉＣウイスカ−の製造方法

Country Status (1)

Country Link
JP (1) JPS63190800A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS63190800A (ja) 1988-08-08

Similar Documents

Publication Publication Date Title
JP3383608B2 (ja) ナノ結晶性材料を合成するための装置
Koc et al. Synthesis of beta silicon carbide powders using carbon coated fumed silica
US2819151A (en) Process for burning silicon fluorides to form silica
WO1983004188A1 (en) Process for manufacturing metal carbides and their precursors
JPH0455736B2 (enrdf_load_stackoverflow)
US4904622A (en) Process for the preparation of silicon carbide whiskers
JPS6130613B2 (enrdf_load_stackoverflow)
JPS60118615A (ja) 含炭素組成物の製造方法
JPH03358B2 (enrdf_load_stackoverflow)
JP2519347B2 (ja) 炭化物化合物製造方法
US3211527A (en) Process for producing ultrafine silicon nitride
JPH0118005B2 (enrdf_load_stackoverflow)
JP2536849B2 (ja) 焼結用β晶炭化ケイ素粉末
JPH06166510A (ja) 微粒子状炭化珪素の製造方法
JP2916303B2 (ja) 含炭素組成物
JPS62132718A (ja) 新規含炭素組成物
JPH04270199A (ja) 炭化珪素ウイスカーの製造方法
JPH04362009A (ja) 微粒子状β型炭化珪素の製造方法
JP2875925B2 (ja) 含炭素組成物の製造方法
JPH05132307A (ja) 微粒子状炭化珪素の製造方法
JPS6250402B2 (enrdf_load_stackoverflow)
Czosnek et al. Aerosol-assisted synthesis of SiC-based nanopowders from organosilicon precursor systems
JPS5983922A (ja) 炭化ケイ素粉の製造法
JPH04198100A (ja) 窒化珪素ウイスカーの製造方法
JPH0339988B2 (enrdf_load_stackoverflow)