JPH0332229B2 - - Google Patents

Info

Publication number
JPH0332229B2
JPH0332229B2 JP56098573A JP9857381A JPH0332229B2 JP H0332229 B2 JPH0332229 B2 JP H0332229B2 JP 56098573 A JP56098573 A JP 56098573A JP 9857381 A JP9857381 A JP 9857381A JP H0332229 B2 JPH0332229 B2 JP H0332229B2
Authority
JP
Japan
Prior art keywords
wiring
molybdenum
cutting
circuit
cut
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56098573A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58167A (ja
Inventor
Takashi Iwai
Tatsuyuki Ichinose
Noriaki Sato
Hitoshi Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56098573A priority Critical patent/JPS58167A/ja
Publication of JPS58167A publication Critical patent/JPS58167A/ja
Publication of JPH0332229B2 publication Critical patent/JPH0332229B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP56098573A 1981-06-25 1981-06-25 半導体装置 Granted JPS58167A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56098573A JPS58167A (ja) 1981-06-25 1981-06-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56098573A JPS58167A (ja) 1981-06-25 1981-06-25 半導体装置

Publications (2)

Publication Number Publication Date
JPS58167A JPS58167A (ja) 1983-01-05
JPH0332229B2 true JPH0332229B2 (enrdf_load_html_response) 1991-05-10

Family

ID=14223407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56098573A Granted JPS58167A (ja) 1981-06-25 1981-06-25 半導体装置

Country Status (1)

Country Link
JP (1) JPS58167A (enrdf_load_html_response)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6014434B2 (ja) * 1981-11-16 1985-04-13 アルプス電気株式会社 デイスク駆動装置のドア開閉機構
US4564930A (en) * 1982-07-20 1986-01-14 Pioneer Electronic Corporation Disc carrying system
US4748197A (en) * 1984-06-27 1988-05-31 Allied Corporation Fiber for reinforcing plastic composites and reinforced plastic composites therefrom
JPS61111563A (ja) * 1984-11-05 1986-05-29 Mitsubishi Electric Corp 半導体装置の金属配線切断方法
US6023091A (en) * 1995-11-30 2000-02-08 Motorola, Inc. Semiconductor heater and method for making

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5617060A (en) * 1979-07-23 1981-02-18 Fujitsu Ltd Semiconductor device
JPS5643758A (en) * 1979-09-17 1981-04-22 Fujitsu Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS58167A (ja) 1983-01-05

Similar Documents

Publication Publication Date Title
JPS63160268A (ja) 金属ヒューズリンクを用いた書込み可能なｍｏｓメモリ及びその製造方法
JPH0379871B2 (enrdf_load_html_response)
JPS5829629B2 (ja) プログラム可能半導体装置およびその製造方法
US4198744A (en) Process for fabrication of fuse and interconnects
US5097247A (en) Heat actuated fuse apparatus with solder link
US4272753A (en) Integrated circuit fuse
US4747076A (en) Method of writing information into a fuse-type ROM
EP0078165A2 (en) A semiconductor device having a control wiring layer
US4679310A (en) Method of making improved metal silicide fuse for integrated circuit structure
JPH0332229B2 (enrdf_load_html_response)
US5572050A (en) Fuse-triggered antifuse
DE69533537D1 (de) Schmelzstruktur für eine integrierte Schaltungsanordnung
JPH01184861A (ja) レーザ光によるトリミング方法
JPS584819B2 (ja) ハンドウタイソウチ
JPS5892252A (ja) 半導体装置の製造方法
JPH0328069B2 (enrdf_load_html_response)
TW567603B (en) Fuse structure for a semiconductor device and manufacturing method thereof
JP4164054B2 (ja) ポリシリコンヒューズを有する半導体装置
JPH0553072B2 (enrdf_load_html_response)
JP2508293B2 (ja) 半導体装置及びその製造方法
JPS5987736A (ja) 半導体記憶装置
JPS5892251A (ja) 半導体装置の製造方法
JPS5877097A (ja) プログラマブル・リ−ド・オンリ・メモリ素子
JPS5877096A (ja) プログラマブル・リ−ド・オンリ・メモリ素子
JPS58158099A (ja) プログラム可能な読出し専用記憶素子