JPH0331679B2 - - Google Patents

Info

Publication number
JPH0331679B2
JPH0331679B2 JP60174016A JP17401685A JPH0331679B2 JP H0331679 B2 JPH0331679 B2 JP H0331679B2 JP 60174016 A JP60174016 A JP 60174016A JP 17401685 A JP17401685 A JP 17401685A JP H0331679 B2 JPH0331679 B2 JP H0331679B2
Authority
JP
Japan
Prior art keywords
carbon
silicon nitride
silicon carbide
weight
parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60174016A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6236100A (ja
Inventor
Shinichi Sakata
Katsuro Masunaga
Yasuhiko Kamitoku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ube Corp
Original Assignee
Ube Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ube Industries Ltd filed Critical Ube Industries Ltd
Priority to JP60174016A priority Critical patent/JPS6236100A/ja
Publication of JPS6236100A publication Critical patent/JPS6236100A/ja
Publication of JPH0331679B2 publication Critical patent/JPH0331679B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP60174016A 1985-08-09 1985-08-09 炭化珪素ウイスカ−の製造法 Granted JPS6236100A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60174016A JPS6236100A (ja) 1985-08-09 1985-08-09 炭化珪素ウイスカ−の製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60174016A JPS6236100A (ja) 1985-08-09 1985-08-09 炭化珪素ウイスカ−の製造法

Publications (2)

Publication Number Publication Date
JPS6236100A JPS6236100A (ja) 1987-02-17
JPH0331679B2 true JPH0331679B2 (enrdf_load_stackoverflow) 1991-05-08

Family

ID=15971164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60174016A Granted JPS6236100A (ja) 1985-08-09 1985-08-09 炭化珪素ウイスカ−の製造法

Country Status (1)

Country Link
JP (1) JPS6236100A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3918073B2 (ja) 2001-06-25 2007-05-23 独立行政法人科学技術振興機構 ３Ｃ−ＳｉＣナノウィスカーの合成方法及び３Ｃ−ＳｉＣナノウィスカー

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60131899A (ja) * 1983-12-16 1985-07-13 Tokai Kounetsu Kogyo Kk 炭化ケイ素ウイスカ−の製造方法

Also Published As

Publication number Publication date
JPS6236100A (ja) 1987-02-17

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