JPH0330293B2 - - Google Patents
Info
- Publication number
- JPH0330293B2 JPH0330293B2 JP56104007A JP10400781A JPH0330293B2 JP H0330293 B2 JPH0330293 B2 JP H0330293B2 JP 56104007 A JP56104007 A JP 56104007A JP 10400781 A JP10400781 A JP 10400781A JP H0330293 B2 JPH0330293 B2 JP H0330293B2
- Authority
- JP
- Japan
- Prior art keywords
- base
- nitride film
- window
- film
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000004767 nitrides Chemical class 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 238000005121 nitriding Methods 0.000 claims description 9
- 239000012808 vapor phase Substances 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 6
- 238000001947 vapour-phase growth Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- -1 arsenic ions Chemical class 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10400781A JPS586126A (ja) | 1981-07-03 | 1981-07-03 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10400781A JPS586126A (ja) | 1981-07-03 | 1981-07-03 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS586126A JPS586126A (ja) | 1983-01-13 |
| JPH0330293B2 true JPH0330293B2 (nl) | 1991-04-26 |
Family
ID=14369202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10400781A Granted JPS586126A (ja) | 1981-07-03 | 1981-07-03 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS586126A (nl) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58180409U (ja) * | 1982-05-28 | 1983-12-02 | ソニ−マグネスケ−ル株式会社 | 測尺装置 |
| JPS6127648U (ja) * | 1984-07-24 | 1986-02-19 | 株式会社 大隈鐵工所 | 伸縮形計測装置 |
| JPH01148257U (nl) * | 1988-03-28 | 1989-10-13 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5219968A (en) * | 1975-08-06 | 1977-02-15 | Nec Corp | Semiconductor ic manufacturig process |
| JPS5621320A (en) * | 1979-07-28 | 1981-02-27 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1981
- 1981-07-03 JP JP10400781A patent/JPS586126A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5219968A (en) * | 1975-08-06 | 1977-02-15 | Nec Corp | Semiconductor ic manufacturig process |
| JPS5621320A (en) * | 1979-07-28 | 1981-02-27 | Fujitsu Ltd | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS586126A (ja) | 1983-01-13 |
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