JPH0329863B2 - - Google Patents
Info
- Publication number
- JPH0329863B2 JPH0329863B2 JP106088A JP106088A JPH0329863B2 JP H0329863 B2 JPH0329863 B2 JP H0329863B2 JP 106088 A JP106088 A JP 106088A JP 106088 A JP106088 A JP 106088A JP H0329863 B2 JPH0329863 B2 JP H0329863B2
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- target
- anode
- sputtering
- vacuum container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004544 sputter deposition Methods 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 16
- 239000000112 cooling gas Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 12
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000007767 bonding agent Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP106088A JPH01177368A (ja) | 1988-01-06 | 1988-01-06 | スパッタリング装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP106088A JPH01177368A (ja) | 1988-01-06 | 1988-01-06 | スパッタリング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01177368A JPH01177368A (ja) | 1989-07-13 |
| JPH0329863B2 true JPH0329863B2 (enrdf_load_stackoverflow) | 1991-04-25 |
Family
ID=11490994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP106088A Granted JPH01177368A (ja) | 1988-01-06 | 1988-01-06 | スパッタリング装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01177368A (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5221403A (en) * | 1990-07-20 | 1993-06-22 | Tokyo Electron Limited | Support table for plate-like body and processing apparatus using the table |
| US6221217B1 (en) | 1995-07-10 | 2001-04-24 | Cvc, Inc. | Physical vapor deposition system having reduced thickness backing plate |
| US5876573A (en) * | 1995-07-10 | 1999-03-02 | Cvc, Inc. | High magnetic flux cathode apparatus and method for high productivity physical-vapor deposition |
| WO1997003220A1 (en) * | 1995-07-10 | 1997-01-30 | Cvc Products, Inc. | Permanent magnet array apparatus and method |
| US6039848A (en) * | 1995-07-10 | 2000-03-21 | Cvc Products, Inc. | Ultra-high vacuum apparatus and method for high productivity physical vapor deposition. |
| KR100291330B1 (ko) * | 1998-07-02 | 2001-07-12 | 윤종용 | 반도체장치제조용스퍼터링설비및이를이용한스퍼터링방법 |
-
1988
- 1988-01-06 JP JP106088A patent/JPH01177368A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01177368A (ja) | 1989-07-13 |
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