JPH01177368A - スパッタリング装置 - Google Patents

スパッタリング装置

Info

Publication number
JPH01177368A
JPH01177368A JP106088A JP106088A JPH01177368A JP H01177368 A JPH01177368 A JP H01177368A JP 106088 A JP106088 A JP 106088A JP 106088 A JP106088 A JP 106088A JP H01177368 A JPH01177368 A JP H01177368A
Authority
JP
Japan
Prior art keywords
cathode
target
anode
electrostatic chuck
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP106088A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0329863B2 (enrdf_load_stackoverflow
Inventor
Masashi Tezuka
雅士 手塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuda Seisakusho Co Ltd
Original Assignee
Tokuda Seisakusho Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuda Seisakusho Co Ltd filed Critical Tokuda Seisakusho Co Ltd
Priority to JP106088A priority Critical patent/JPH01177368A/ja
Publication of JPH01177368A publication Critical patent/JPH01177368A/ja
Publication of JPH0329863B2 publication Critical patent/JPH0329863B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP106088A 1988-01-06 1988-01-06 スパッタリング装置 Granted JPH01177368A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP106088A JPH01177368A (ja) 1988-01-06 1988-01-06 スパッタリング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP106088A JPH01177368A (ja) 1988-01-06 1988-01-06 スパッタリング装置

Publications (2)

Publication Number Publication Date
JPH01177368A true JPH01177368A (ja) 1989-07-13
JPH0329863B2 JPH0329863B2 (enrdf_load_stackoverflow) 1991-04-25

Family

ID=11490994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP106088A Granted JPH01177368A (ja) 1988-01-06 1988-01-06 スパッタリング装置

Country Status (1)

Country Link
JP (1) JPH01177368A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221403A (en) * 1990-07-20 1993-06-22 Tokyo Electron Limited Support table for plate-like body and processing apparatus using the table
WO1997003221A1 (en) * 1995-07-10 1997-01-30 Cvc Products, Inc. Magnetron cathode apparatus and method for sputtering
US5746897A (en) * 1995-07-10 1998-05-05 Cvc Products, Inc. High magnetic flux permanent magnet array apparatus and method for high productivity physical vapor deposition
US6039848A (en) * 1995-07-10 2000-03-21 Cvc Products, Inc. Ultra-high vacuum apparatus and method for high productivity physical vapor deposition.
US6113754A (en) * 1998-07-02 2000-09-05 Samsung Electronics Co., Ltd. Sputtering apparatus having a target backing plate equipped with a cooling line and sputtering method using the same
US6221217B1 (en) 1995-07-10 2001-04-24 Cvc, Inc. Physical vapor deposition system having reduced thickness backing plate

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221403A (en) * 1990-07-20 1993-06-22 Tokyo Electron Limited Support table for plate-like body and processing apparatus using the table
WO1997003221A1 (en) * 1995-07-10 1997-01-30 Cvc Products, Inc. Magnetron cathode apparatus and method for sputtering
US5746897A (en) * 1995-07-10 1998-05-05 Cvc Products, Inc. High magnetic flux permanent magnet array apparatus and method for high productivity physical vapor deposition
US5876573A (en) * 1995-07-10 1999-03-02 Cvc, Inc. High magnetic flux cathode apparatus and method for high productivity physical-vapor deposition
US6039848A (en) * 1995-07-10 2000-03-21 Cvc Products, Inc. Ultra-high vacuum apparatus and method for high productivity physical vapor deposition.
US6221217B1 (en) 1995-07-10 2001-04-24 Cvc, Inc. Physical vapor deposition system having reduced thickness backing plate
US6113754A (en) * 1998-07-02 2000-09-05 Samsung Electronics Co., Ltd. Sputtering apparatus having a target backing plate equipped with a cooling line and sputtering method using the same

Also Published As

Publication number Publication date
JPH0329863B2 (enrdf_load_stackoverflow) 1991-04-25

Similar Documents

Publication Publication Date Title
US4661228A (en) Apparatus and method for manufacturing planarized aluminum films
US4865712A (en) Apparatus for manufacturing planarized aluminum films
EP0467390B1 (en) Support table for plate-like body and processing apparatus using the table
TWI250219B (en) Plasma processing apparatus
KR100856592B1 (ko) 냉각 블록 및 플라즈마 처리 장치
KR100615375B1 (ko) 스퍼터링 장치
JPH01251735A (ja) 静電チャック装置
JP3150058B2 (ja) プラズマ処理装置及びプラズマ処理方法
JPS6269620A (ja) プラズマ処理装置
JPH08264515A (ja) プラズマ処理装置、処理装置及びエッチング処理装置
JPH08335567A (ja) プラズマ処理装置
JP3173693B2 (ja) プラズマ処理装置及びその方法
JPH01177368A (ja) スパッタリング装置
US5080772A (en) Method of improving ion flux distribution uniformity on a substrate
JPH06182645A (ja) 静電チャック
JP3438003B2 (ja) プラズマ処理装置
JP3372244B2 (ja) プラズマ処理装置
EP0462563A1 (en) Treating apparatus for semiconductor
JP4510959B2 (ja) 反応性スパッタリング装置
JP3066673B2 (ja) ドライエッチング方法
JPH05226289A (ja) 被処理体用載置装置及びそれを用いた処理装置
KR100196911B1 (ko) 스퍼터링 챔버의 웨이퍼 냉각장치
JP2000288857A (ja) 静電チャック装置及び載置台
JPH06232088A (ja) プラズマ装置及びプラズマ処理方法
JP3173692B2 (ja) プラズマ処理方法