JPH0329752B2 - - Google Patents
Info
- Publication number
- JPH0329752B2 JPH0329752B2 JP60018744A JP1874485A JPH0329752B2 JP H0329752 B2 JPH0329752 B2 JP H0329752B2 JP 60018744 A JP60018744 A JP 60018744A JP 1874485 A JP1874485 A JP 1874485A JP H0329752 B2 JPH0329752 B2 JP H0329752B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- heater
- melt
- crystal
- diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 58
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 25
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 16
- 239000000155 melt Substances 0.000 description 15
- 239000002994 raw material Substances 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000000565 sealant Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 102100031920 Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Human genes 0.000 description 1
- 101000992065 Homo sapiens Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Proteins 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001773 deep-level transient spectroscopy Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- -1 was installed Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1874485A JPS61178490A (ja) | 1985-02-04 | 1985-02-04 | 単結晶引き上げ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1874485A JPS61178490A (ja) | 1985-02-04 | 1985-02-04 | 単結晶引き上げ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61178490A JPS61178490A (ja) | 1986-08-11 |
| JPH0329752B2 true JPH0329752B2 (it) | 1991-04-25 |
Family
ID=11980162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1874485A Granted JPS61178490A (ja) | 1985-02-04 | 1985-02-04 | 単結晶引き上げ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61178490A (it) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10339792B4 (de) * | 2003-03-27 | 2014-02-27 | Siltronic Ag | Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium |
| KR100588425B1 (ko) | 2003-03-27 | 2006-06-12 | 실트로닉 아게 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS553312A (en) * | 1978-06-15 | 1980-01-11 | Toshiba Corp | Production of oxide single crystal |
| JPS59174593A (ja) * | 1983-03-25 | 1984-10-03 | Toshiba Corp | 単結晶製造装置用発熱抵抗体 |
-
1985
- 1985-02-04 JP JP1874485A patent/JPS61178490A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS553312A (en) * | 1978-06-15 | 1980-01-11 | Toshiba Corp | Production of oxide single crystal |
| JPS59174593A (ja) * | 1983-03-25 | 1984-10-03 | Toshiba Corp | 単結晶製造装置用発熱抵抗体 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61178490A (ja) | 1986-08-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6046998A (ja) | 単結晶引上方法及びそのための装置 | |
| JPH0357072B2 (it) | ||
| JPH0329752B2 (it) | ||
| JPS6168389A (ja) | 単結晶成長装置 | |
| JPH0315550Y2 (it) | ||
| JP2758038B2 (ja) | 単結晶製造装置 | |
| JP3991400B2 (ja) | 単結晶の育成方法及びその装置 | |
| JP3018738B2 (ja) | 単結晶製造装置 | |
| JP2542434B2 (ja) | 化合物半導体結晶の製造方法および製造装置 | |
| JP2677859B2 (ja) | 混晶型化合物半導体の結晶成長方法 | |
| JP2690420B2 (ja) | 単結晶の製造装置 | |
| JPH0699233B2 (ja) | 単結晶の製造方法 | |
| JPS6021900A (ja) | 化合物半導体単結晶製造装置 | |
| JPS6395196A (ja) | 単結晶の育成方法 | |
| JP2700145B2 (ja) | 化合物半導体単結晶の製造方法 | |
| JP3247829B2 (ja) | 結晶成長炉および結晶成長方法 | |
| JP2645491B2 (ja) | 化合物半導体単結晶の育成方法 | |
| JPH0660080B2 (ja) | 単結晶成長装置 | |
| JPH0559873B2 (it) | ||
| JPH04321590A (ja) | 単結晶育成方法 | |
| JPS6251237B2 (it) | ||
| JPS62207799A (ja) | ３−ｖ族化合物半導体単結晶製造方法及びその装置 | |
| JPH0449185Y2 (it) | ||
| JPH06183884A (ja) | 単結晶の製造方法 | |
| JP2726887B2 (ja) | 化合物半導体単結晶の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |