JPH0329303B2 - - Google Patents

Info

Publication number
JPH0329303B2
JPH0329303B2 JP59188442A JP18844284A JPH0329303B2 JP H0329303 B2 JPH0329303 B2 JP H0329303B2 JP 59188442 A JP59188442 A JP 59188442A JP 18844284 A JP18844284 A JP 18844284A JP H0329303 B2 JPH0329303 B2 JP H0329303B2
Authority
JP
Japan
Prior art keywords
layer
gallium arsenide
gate electrode
compound layer
arsenide compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59188442A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6165480A (ja
Inventor
Shigeru Kuroda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59188442A priority Critical patent/JPS6165480A/ja
Publication of JPS6165480A publication Critical patent/JPS6165480A/ja
Publication of JPH0329303B2 publication Critical patent/JPH0329303B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)
JP59188442A 1984-09-07 1984-09-07 半導体装置の製造方法 Granted JPS6165480A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59188442A JPS6165480A (ja) 1984-09-07 1984-09-07 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59188442A JPS6165480A (ja) 1984-09-07 1984-09-07 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6165480A JPS6165480A (ja) 1986-04-04
JPH0329303B2 true JPH0329303B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-04-23

Family

ID=16223750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59188442A Granted JPS6165480A (ja) 1984-09-07 1984-09-07 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6165480A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2551427B2 (ja) * 1987-03-12 1996-11-06 富士通株式会社 半導体装置及びその製造方法
JP4854980B2 (ja) * 2005-03-30 2012-01-18 住友電工デバイス・イノベーション株式会社 スイッチ回路及び半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2232423B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-06-08 1976-04-23 Pont A Mousson
SE399123B (sv) * 1974-12-18 1978-01-30 Atomenergi Ab Konvektor innefattande en tillplattad plastrorsspiral samt forfarande for tillverkning derav
JPS54130649U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1978-03-03 1979-09-11
JPS57175887A (en) * 1981-04-24 1982-10-28 Toshiba Corp Heat exchanger

Also Published As

Publication number Publication date
JPS6165480A (ja) 1986-04-04

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term