JPH0329023B2 - - Google Patents

Info

Publication number
JPH0329023B2
JPH0329023B2 JP61130914A JP13091486A JPH0329023B2 JP H0329023 B2 JPH0329023 B2 JP H0329023B2 JP 61130914 A JP61130914 A JP 61130914A JP 13091486 A JP13091486 A JP 13091486A JP H0329023 B2 JPH0329023 B2 JP H0329023B2
Authority
JP
Japan
Prior art keywords
silicon carbide
boron
sintered body
sintering
molded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61130914A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62288167A (ja
Inventor
Nobuaki Urasato
Minoru Takamizawa
Akira Hayashida
Hiromi Oosaki
Junichiro Maruta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP61130914A priority Critical patent/JPS62288167A/ja
Priority to DE3716002A priority patent/DE3716002C2/de
Publication of JPS62288167A publication Critical patent/JPS62288167A/ja
Priority to US07/453,038 priority patent/US5011639A/en
Publication of JPH0329023B2 publication Critical patent/JPH0329023B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/4807—Ceramic parts
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Products (AREA)
JP61130914A 1986-06-05 1986-06-05 炭化けい素焼結体の製造方法 Granted JPS62288167A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP61130914A JPS62288167A (ja) 1986-06-05 1986-06-05 炭化けい素焼結体の製造方法
DE3716002A DE3716002C2 (de) 1986-06-05 1987-05-13 Verfahren zur Herstellung eines Siliciumcarbid-Sinterkörpers
US07/453,038 US5011639A (en) 1986-06-05 1989-12-12 Method for the preparation of a sintered body of silicon carbide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61130914A JPS62288167A (ja) 1986-06-05 1986-06-05 炭化けい素焼結体の製造方法

Publications (2)

Publication Number Publication Date
JPS62288167A JPS62288167A (ja) 1987-12-15
JPH0329023B2 true JPH0329023B2 (en, 2012) 1991-04-22

Family

ID=15045688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61130914A Granted JPS62288167A (ja) 1986-06-05 1986-06-05 炭化けい素焼結体の製造方法

Country Status (3)

Country Link
US (1) US5011639A (en, 2012)
JP (1) JPS62288167A (en, 2012)
DE (1) DE3716002C2 (en, 2012)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5571758A (en) * 1993-08-19 1996-11-05 General Electric Company Nitrogen-reacted silicon carbide material
DE19651798A1 (de) * 1996-11-22 1998-06-04 Deutsch Zentr Luft & Raumfahrt Reibeinheit
KR100477184B1 (ko) * 2002-05-17 2005-03-17 휴먼사이언스테크놀러지(주) 티타늄 이온박막을 갖는 탄화규소 소결체의 제조방법
JP4490304B2 (ja) * 2005-02-16 2010-06-23 株式会社ブリヂストン サセプタ
US7700202B2 (en) * 2006-02-16 2010-04-20 Alliant Techsystems Inc. Precursor formulation of a silicon carbide material
US7727919B2 (en) * 2007-10-29 2010-06-01 Saint-Gobain Ceramics & Plastics, Inc. High resistivity silicon carbide
US7989380B2 (en) * 2008-11-26 2011-08-02 Ceradyne, Inc. High resistivity SiC material with B, N and O as the only additions
DE102012012227B4 (de) 2011-06-30 2024-07-18 QSIL Ingenieurkeramik GmbH Herstellung dichter Siliziumcarbid-Sinterkörper mit gezielt einstellbarem elektrischem Widerstand und so erhältliche Siliciumcarbid-Sinterkörper
CN112745124A (zh) * 2020-12-31 2021-05-04 松山湖材料实验室 碳化硅陶瓷制品及其制备方法
FR3122423B3 (fr) * 2021-04-30 2023-09-08 Saint Gobain Ct Recherches Materiau fritte dense de carbure de silicium a tres faible resistivite electrique

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209474A (en) * 1977-08-31 1980-06-24 General Electric Company Process for preparing semiconducting silicon carbide sintered body
US4346049A (en) * 1978-05-01 1982-08-24 Kennecott Corporation Sintered alpha silicon carbide ceramic body having equiaxed microstructure
US4237085A (en) * 1979-03-19 1980-12-02 The Carborundum Company Method of producing a high density silicon carbide product
US4668452A (en) * 1980-02-26 1987-05-26 Ngk Spark Plug Co., Ltd. Process for producing silicon carbide heating elements
JPS57160970A (en) * 1981-03-27 1982-10-04 Omori Mamoru Silicon carbide sintered formed body and manufacture
JPS57209884A (en) * 1981-06-17 1982-12-23 Kobe Steel Ltd Manufacture of high strength silicon carbide sintered body
JPS6046912A (ja) * 1983-08-26 1985-03-14 Shin Etsu Chem Co Ltd 超微粒子状炭化けい素の製造方法

Also Published As

Publication number Publication date
US5011639A (en) 1991-04-30
JPS62288167A (ja) 1987-12-15
DE3716002C2 (de) 1996-07-11
DE3716002A1 (de) 1987-12-23

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