JPH0328047B2 - - Google Patents
Info
- Publication number
- JPH0328047B2 JPH0328047B2 JP29696185A JP29696185A JPH0328047B2 JP H0328047 B2 JPH0328047 B2 JP H0328047B2 JP 29696185 A JP29696185 A JP 29696185A JP 29696185 A JP29696185 A JP 29696185A JP H0328047 B2 JPH0328047 B2 JP H0328047B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- mask
- etching
- mask substrate
- lattice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 83
- 239000000463 material Substances 0.000 claims description 39
- 238000005530 etching Methods 0.000 claims description 29
- 239000012779 reinforcing material Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- 238000010030 laminating Methods 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 230000003014 reinforcing effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60296961A JPS62155515A (ja) | 1985-12-27 | 1985-12-27 | Ｘ線露光用マスクの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60296961A JPS62155515A (ja) | 1985-12-27 | 1985-12-27 | Ｘ線露光用マスクの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62155515A JPS62155515A (ja) | 1987-07-10 |
| JPH0328047B2 true JPH0328047B2 (US07413550-20080819-C00001.png) | 1991-04-17 |
Family
ID=17840433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60296961A Granted JPS62155515A (ja) | 1985-12-27 | 1985-12-27 | Ｘ線露光用マスクの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62155515A (US07413550-20080819-C00001.png) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5192178A (US07413550-20080819-C00001.png) * | 1975-02-10 | 1976-08-12 | ||
| JPS5370674A (en) * | 1976-12-06 | 1978-06-23 | Nippon Chemical Ind | Method of producing photomask |
| JPS54142072A (en) * | 1978-04-27 | 1979-11-05 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of fabricating xxray exposure mask |
| JPS59188919A (ja) * | 1983-04-11 | 1984-10-26 | Seiko Epson Corp | Ｘ線マスク |
-
1985
- 1985-12-27 JP JP60296961A patent/JPS62155515A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5192178A (US07413550-20080819-C00001.png) * | 1975-02-10 | 1976-08-12 | ||
| JPS5370674A (en) * | 1976-12-06 | 1978-06-23 | Nippon Chemical Ind | Method of producing photomask |
| JPS54142072A (en) * | 1978-04-27 | 1979-11-05 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of fabricating xxray exposure mask |
| JPS59188919A (ja) * | 1983-04-11 | 1984-10-26 | Seiko Epson Corp | Ｘ線マスク |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62155515A (ja) | 1987-07-10 |
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