JPH0328047B2 - - Google Patents
Info
- Publication number
- JPH0328047B2 JPH0328047B2 JP29696185A JP29696185A JPH0328047B2 JP H0328047 B2 JPH0328047 B2 JP H0328047B2 JP 29696185 A JP29696185 A JP 29696185A JP 29696185 A JP29696185 A JP 29696185A JP H0328047 B2 JPH0328047 B2 JP H0328047B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- mask
- etching
- mask substrate
- lattice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 83
- 239000000463 material Substances 0.000 claims description 39
- 238000005530 etching Methods 0.000 claims description 29
- 239000012779 reinforcing material Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- 238000010030 laminating Methods 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 230000003014 reinforcing effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はＸ線露光用マスク、特にマスク基板
と同一材料からなる格子状補強材を備えたＸ線露
光用マスクの製造方法に関するものである。[Detailed Description of the Invention] [Field of Industrial Application] This invention relates to an X-ray exposure mask, and particularly to a method for manufacturing an X-ray exposure mask equipped with a lattice-shaped reinforcing material made of the same material as the mask substrate. .
Ｘ線露光用マスクのマスク基板はＸ線の透過性
を考慮して、その厚さは薄い程良いが、あまりに
薄くすると機械的強度が弱くなつてしまうため、
マスク基板の裏面に格子状補強材なるものを形成
して、マスク基板の機械的強度を補強している。
第２図は従来の格子状補強材を備えたＸ線露光用
マスクの製造方法を示し、図において、１はシリ
コン基板、１ａはマスク枠、２ａ，２ｂはそれぞ
れシリコン基板１の表面・裏面に形成された、シ
リコンナイトライドやボロンナイトライド等から
なるマスク基板、４は金、タンタル等からなる露
光用パターン、５はフオトレジスト、６はシリコ
ンからなる格子状補強材である。
Considering the transparency of X-rays, the thinner the mask substrate of the X-ray exposure mask is, the better, but if it is made too thin, the mechanical strength will be weakened.
A grid-like reinforcing material is formed on the back surface of the mask substrate to reinforce the mechanical strength of the mask substrate.
Fig. 2 shows a conventional method for manufacturing an X-ray exposure mask equipped with a grid-like reinforcing material. The formed mask substrate is made of silicon nitride, boron nitride, etc., 4 is an exposure pattern made of gold, tantalum, etc., 5 is photoresist, and 6 is a lattice-shaped reinforcing material made of silicon.
次にその製造方法について説明する。まず第２
図ａに示すように、シリコン基板１の両面にマス
ク基板２ａ，２ｂを形成する。次に第２図ｂに示
すように、シリコン基板１表面のマスク基板２ａ
上にＸ線露光用パターン４を形成した後、Ｘ線が
透過しなくても良いマスクの部分、例えばダイシ
ングラインなどに対応するシリコン基板１裏面の
マスク基板２ｂの部分とマスク枠となる部分をフ
オトレジスト５で格子状にパターニングする。そ
して第２図ｃに示すように、水酸化カリウムのよ
うなエツチング液でシリコン基板１を裏面から結
晶軸に沿つて異方性エツチングし、シリコンの格
子状補強材をマスク基板２ａの裏面に形成して、
シリコン格子状補強材を備えたＸ線露光用マスク
を得る。 Next, the manufacturing method will be explained. First, the second
As shown in Figure a, mask substrates 2a and 2b are formed on both sides of a silicon substrate 1. Next, as shown in FIG. 2b, the mask substrate 2a on the surface of the silicon substrate 1 is
After forming the X-ray exposure pattern 4 on the top, a portion of the mask that does not need to be transmitted through X-rays, for example, a portion of the mask substrate 2b on the back surface of the silicon substrate 1 corresponding to a dicing line, etc., and a portion that will become a mask frame are separated. Patterning is performed using photoresist 5 in a lattice shape. Then, as shown in FIG. 2c, the silicon substrate 1 is anisotropically etched from the back side along the crystal axis using an etching solution such as potassium hydroxide to form a silicon lattice reinforcement material on the back side of the mask substrate 2a. do,
An X-ray exposure mask equipped with a silicon lattice reinforcement is obtained.
従来のＸ線露光用マスクは以上のように構成さ
れているので、マスク基板と格子状補強材が異な
る材質であるため、マスク基板と補強剤との密着
性が悪くて機械的強度が低下したり、それぞれの
伸縮率の違いのため温度変化によつてマスクに歪
みが生じるなどの問題点があつた。また、初めに
用いるシリコン基板の厚さの分だけ格子状補強材
が形成されるので、必要以上に補強材が厚くな
り、異方性エツチングによる補強材の形成にも時
間がかかつてしまうなどの製造上でも問題点があ
つた。
Conventional X-ray exposure masks are constructed as described above, and since the mask substrate and the lattice reinforcing material are made of different materials, the adhesion between the mask substrate and the reinforcing material is poor, resulting in a decrease in mechanical strength. There were also problems such as distortion of the mask due to temperature changes due to the different expansion and contraction rates of each. In addition, since the lattice-like reinforcing material is formed by the thickness of the silicon substrate used initially, the reinforcing material becomes thicker than necessary, and it takes time to form the reinforcing material by anisotropic etching. There were also problems in manufacturing.
本発明は、上記のような問題点を解消するため
になされたもので、機械的強度が強く、歪みがほ
とんど生じることがなく、しかも所望の厚さの格
子状補強材を有するＸ線露光用マスクの製造方法
を得ることを目的とする。 The present invention has been made to solve the above-mentioned problems.The present invention has been made to solve the above-mentioned problems. The purpose is to obtain a method for manufacturing masks.
本発明に係るＸ線露光用マスクの製造方法は、
基板にその表面をエツチングして格子状凹部を形
成し、該凹部を埋めてマスク基板材料を積層し、
さらにその上に平坦化材を積層してその表面を平
坦化し、該マスク基板材料層及び平坦化材層を所
定のエツチング手段を用いて同じエツチングレー
トでエツチングし、全面に平坦なマスク基板表面
を露出させ、露出したマスク基板上に露光用パタ
ーンを形成した後、上記基板をマスク枠部分を残
して除去し、マスク基板裏面にマスク基板と同一
材料からなる格子状補強材を備えたＸ線露光用マ
スクを得るものである。
The method for manufacturing an X-ray exposure mask according to the present invention includes:
etching the surface of the substrate to form a grid-like recess, filling the recess and laminating a mask substrate material;
Further, a planarizing material is layered on top of the layer to planarize its surface, and the mask substrate material layer and the planarizing material layer are etched at the same etching rate using a predetermined etching means to form a flat mask substrate surface over the entire surface. After exposing the mask substrate and forming an exposure pattern on the exposed mask substrate, the substrate is removed except for the mask frame portion, and a lattice-shaped reinforcing material made of the same material as the mask substrate is provided on the back side of the mask substrate for X-ray exposure. This is to obtain a mask for use.
本発明においては、基板にその表面をエツチン
グして格子状凹部を形成し、該凹部を埋めてマス
ク基板材料を積層するので、マスク基板と同一材
料からなる格子状補強材をマスク基板と一体化さ
せて所望の厚さに形成できる。また、マスク基板
材料層及びその上に積層された平坦化材層を所定
のエツチング手段により同じエツチングレートで
エツチングするので、マスク基板表面を平坦にで
きる。またマスク基板と同一材料からなる格子状
補強材をマスク基板裏面に備えているので、マス
クの機械的強度は強く、温度変化によるマスクの
歪みも少ない。
In the present invention, the surface of the substrate is etched to form lattice-shaped recesses, and the mask substrate material is laminated to fill the recesses, so that the lattice-shaped reinforcing material made of the same material as the mask substrate is integrated with the mask substrate. It can be formed to a desired thickness. Further, since the mask substrate material layer and the planarization material layer laminated thereon are etched by a predetermined etching means at the same etching rate, the surface of the mask substrate can be made flat. Furthermore, since a lattice-like reinforcing material made of the same material as the mask substrate is provided on the back surface of the mask substrate, the mechanical strength of the mask is strong and distortion of the mask due to temperature changes is small.
以下、この発明の実施例を図について説明す
る。
Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例によりＸ線露光用マ
スクの製造方法を示し、第１図ｄに示す最終生成
物が本発明により得られたＸ線露光用マスクであ
る。図において、１はシリコン基板、１ａはマス
ク枠、２はマスク基板、３は例えばフオトレジス
トなどの平坦化材、４は金（Au）又はタンタル
（Ta）などからなる露光用パターン、７は格子状
補強材、７ａはシリコン基板１に形成された凹部
である。 FIG. 1 shows a method for manufacturing an X-ray exposure mask according to an embodiment of the present invention, and the final product shown in FIG. 1d is the X-ray exposure mask obtained according to the present invention. In the figure, 1 is a silicon substrate, 1a is a mask frame, 2 is a mask substrate, 3 is a flattening material such as photoresist, 4 is an exposure pattern made of gold (Au) or tantalum (Ta), etc., and 7 is a grating. The reinforcing material 7a is a recess formed in the silicon substrate 1.
次に本実施例の製造方法について説明する。こ
の方法が従来方法と大きく異なる点は格子状補強
材とマスク基板を一度に形成した点である。以
下、工程順に説明する。 Next, the manufacturing method of this example will be explained. The major difference between this method and the conventional method is that the lattice reinforcing material and the mask substrate are formed at the same time. The steps will be explained below in order.
まず第１図ａに示すように、Ｘ線が露過しなく
ても良いマスクの部分、例えばダイシングライン
などに対応するシリコン基板１上の部分を格子状
にパターンニングし、所望の深さだけエツチング
して凹部７ａを形成する。次に第１図ｂに示すよ
うに、上記凹部７ａを埋めてマスク基板２の材料
を所望の厚さだけ積層し、さらにその上に平坦化
材３を表面が平坦になるよう積層する。 First, as shown in FIG. 1a, a portion of the mask that does not need to be exposed to X-rays, such as a portion of the silicon substrate 1 that corresponds to a dicing line, is patterned in a grid pattern to a desired depth. Etching is performed to form a recess 7a. Next, as shown in FIG. 1B, the recess 7a is filled and the material of the mask substrate 2 is laminated to a desired thickness, and the planarizing material 3 is further laminated thereon so that the surface becomes flat.
次に第１図ｃに示すように、上記マスク基板２
材料層及び上記平坦材３層をエツチングレートが
同じになるようなエツチング条件で、例えばCF4
＋H2のプラズマエツチング、反応性イオンエツ
チングなどでエツチングして、上記平坦化材３を
マスク基板２表面が平坦に露出するよう完全に除
去する。そして平坦に露出した上記マスク基板２
上に露光用パターン４を形成する。その後、第１
図ｄに示すように、マスク枠１ａの部分を残して
シリコン基板１のみエツチングにより選択的に除
去して、格子状補強材を備えたＸ線露光用マスク
を形成する。 Next, as shown in FIG. 1c, the mask substrate 2
For example, CF 4 is etched under etching conditions such that the material layer and the three flat material layers have the same etching rate.
Etching is performed by + H2 plasma etching, reactive ion etching, etc. to completely remove the planarizing material 3 so that the surface of the mask substrate 2 is exposed flatly. The mask substrate 2 is exposed flatly.
An exposure pattern 4 is formed thereon. Then the first
As shown in FIG. d, only the silicon substrate 1 is selectively removed by etching, leaving the mask frame 1a, to form an X-ray exposure mask having a grid-like reinforcing material.
このような本実施例によれば、シリコン基板に
その表面を所望の厚さにエツチングして格子状の
凹部を形成し、該凹部を埋めてマスク基板材料を
積層するので、マスク基板と同一材料からなる格
子状補強材をマスク基板と一体化させて所望の厚
さだけ形成でき、またマスク基板材料層及びその
上の平坦化材質層を同じエツチングレートでエツ
チングできるエツチング方法を用いてエツチング
するので、マスク基板表面を平坦にできる。さら
にシリコン基板の除去を等方性エツチングにより
行うことができるので、シリコン基板を容易に除
去することができる。また、このＸ線露光用マス
クでは、補強材がマスク基板と同一材料からなる
ので、温度変化によるマスクの歪みは少なく、マ
スクの機械的強度も強い。 According to this embodiment, the surface of the silicon substrate is etched to a desired thickness to form lattice-like recesses, and the recesses are filled and the mask substrate material is laminated, so that the same material as the mask substrate is used. The lattice-like reinforcing material consisting of the mask substrate can be integrated with the mask substrate to a desired thickness, and the mask substrate material layer and the flattening material layer thereon can be etched using an etching method that can etch the same etching rate. , the surface of the mask substrate can be made flat. Furthermore, since the silicon substrate can be removed by isotropic etching, the silicon substrate can be easily removed. Furthermore, in this X-ray exposure mask, since the reinforcing material is made of the same material as the mask substrate, the mask suffers little distortion due to temperature changes and has high mechanical strength.
なお上記実施例では、マスク基板を製造する下
地としてシリコンからなる基板を用いたが、これ
は基板除去のためのエツチング剤に対してマスク
基板や露光用パターンの材料よりも速いエツチン
グレートを有する、即ち選択比の高いエツチング
レートを有するものであればよく、シリコン以外
の半導体、金属又は絶縁体からなる基板であつて
もよい。 In the above example, a substrate made of silicon was used as the base for manufacturing the mask substrate, but this substrate has a faster etching rate than the material of the mask substrate and the exposure pattern with respect to the etching agent for removing the substrate. That is, the substrate may be any substrate as long as it has a high etching selectivity and etching rate, and may be a substrate made of a semiconductor other than silicon, a metal, or an insulator.
以上のようにこの発明によれば、基板にその表
面をエツチングして格子状凹部を形成し、該凹部
を埋めてマスク基板材料を積層し、さらにその上
に平坦化材を積層して、該マスク基板材料層及び
平坦化材層を所定のエツチング手段を用いて同じ
エツチングレートでエツチングし、露出したマス
ク基板上に露光用パターンを形成した後、上記基
板をマスク枠部分を残して除去するようにしたの
で、平坦なマスク基板表面を有し、該マスク基板
と同一材料からなる格子状補強材を所望の厚さだ
け備え、温度変化によるマスクの歪みが少なく、
マスクの機械的強度も強いＸ線露光用マスクを得
ることができる効果がある。
As described above, according to the present invention, the surface of the substrate is etched to form lattice-like recesses, the recesses are filled and a mask substrate material is laminated, and a planarizing material is further laminated thereon. After etching the mask substrate material layer and the planarization material layer at the same etching rate using a predetermined etching means and forming an exposure pattern on the exposed mask substrate, the substrate is removed leaving the mask frame portion. As a result, the mask substrate has a flat surface and is provided with a desired thickness of lattice-like reinforcing material made of the same material as the mask substrate, resulting in less distortion of the mask due to temperature changes.
There is an effect that an X-ray exposure mask with strong mechanical strength can be obtained.
第１図は本発明の一実施例によるＸ線露光用マ
スクの製造方法を示す工程別断面図、第２図は従
来のＸ線露光用マスクの製造方法を示す工程断面
図である。
図において、１はシリコン基板、１ａはマスク
枠、２はマスク基板、３は平坦化材、４は露光用
パターン、７は格子状補強材、７ａは凹部であ
る。なお図中同一符号は同一または相当部分を示
す。
FIG. 1 is a step-by-step cross-sectional view showing a method for manufacturing an X-ray exposure mask according to an embodiment of the present invention, and FIG. 2 is a step-by-step cross-sectional view showing a conventional method for manufacturing an X-ray exposure mask. In the figure, 1 is a silicon substrate, 1a is a mask frame, 2 is a mask substrate, 3 is a flattening material, 4 is an exposure pattern, 7 is a lattice-shaped reinforcing material, and 7a is a recessed portion. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
るマスク基板と同一材料からなる格子状補強材を
備えたＸ線露光用マスクの製造方法において、 基板にその表面をエツチングして格子状の凹部
を形成する工程と、 上記基板表面に上記格子状凹部を埋めてマスク
基板の材料を積層する工程と、 該マスク基板材料層上全面に平坦化材を積層
し、その表面を平坦化する工程と、 該平坦化材層及び上記マスク基板材料層を同じ
エツチングレートでエツチングできるエツチング
手段を用いてエツチングし、全面に平坦なマスク
基板表面を露出させる工程と、 該マスク基板上にＸ線露光用パターンを形成す
る工程と、 上記基板をマスク枠部分を残して除去する工程
とを含むことを特徴とするＸ線露光用マスクの製
造方法。 ２ 上記基板はマスク基板材料や露光用パターン
材料よりも上記基板除去工程に用いるエツチング
剤に対して速いエツチングレートを有するもので
あることを特徴とする特許請求の範囲第１項記載
のＸ線露光用マスクの製造方法。[Scope of Claims] 1. A method for manufacturing an X-ray exposure mask having a lattice-like reinforcing material made of the same material as the mask substrate for reinforcing its mechanical strength on the back surface of the mask substrate, which comprises: etching the surface of the substrate; forming a lattice-shaped recess in the surface of the substrate, filling the lattice-shaped recess in the surface of the substrate and laminating a mask substrate material; and laminating a planarizing material over the entire surface of the mask substrate material layer, a step of planarizing, a step of etching the planarizing material layer and the mask substrate material layer using an etching means capable of etching at the same etching rate to expose a flat surface of the mask substrate over the entire surface; A method for manufacturing an X-ray exposure mask, comprising: forming an X-ray exposure pattern; and removing the substrate leaving behind a mask frame. 2. The X-ray exposure method according to claim 1, wherein the substrate has a faster etching rate with respect to the etching agent used in the substrate removal step than the mask substrate material or the exposure pattern material. Method of manufacturing masks for use.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60296961A JPS62155515A (en) | 1985-12-27 | 1985-12-27 | Mask for x-ray exposure and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60296961A JPS62155515A (en) | 1985-12-27 | 1985-12-27 | Mask for x-ray exposure and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62155515A JPS62155515A (en) | 1987-07-10 |
| JPH0328047B2 true JPH0328047B2 (en) | 1991-04-17 |
Family
ID=17840433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60296961A Granted JPS62155515A (en) | 1985-12-27 | 1985-12-27 | Mask for x-ray exposure and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62155515A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5192178A (en) * | 1975-02-10 | 1976-08-12 | ||
| JPS5370674A (en) * | 1976-12-06 | 1978-06-23 | Nippon Chemical Ind | Method of producing photomask |
| JPS54142072A (en) * | 1978-04-27 | 1979-11-05 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of fabricating xxray exposure mask |
| JPS59188919A (en) * | 1983-04-11 | 1984-10-26 | Seiko Epson Corp | Mask for x-rays |
-
1985
- 1985-12-27 JP JP60296961A patent/JPS62155515A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5192178A (en) * | 1975-02-10 | 1976-08-12 | ||
| JPS5370674A (en) * | 1976-12-06 | 1978-06-23 | Nippon Chemical Ind | Method of producing photomask |
| JPS54142072A (en) * | 1978-04-27 | 1979-11-05 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of fabricating xxray exposure mask |
| JPS59188919A (en) * | 1983-04-11 | 1984-10-26 | Seiko Epson Corp | Mask for x-rays |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62155515A (en) | 1987-07-10 |
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