JPH03262141A - Lead with bump - Google Patents
Lead with bumpInfo
- Publication number
- JPH03262141A JPH03262141A JP6081590A JP6081590A JPH03262141A JP H03262141 A JPH03262141 A JP H03262141A JP 6081590 A JP6081590 A JP 6081590A JP 6081590 A JP6081590 A JP 6081590A JP H03262141 A JPH03262141 A JP H03262141A
- Authority
- JP
- Japan
- Prior art keywords
- bump
- lead
- tool
- electrode
- bumped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003825 pressing Methods 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 238000004080 punching Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000005304 joining Methods 0.000 claims description 5
- 235000014676 Phragmites communis Nutrition 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 240000007594 Oryza sativa Species 0.000 abstract 1
- 235000007164 Oryza sativa Nutrition 0.000 abstract 1
- 235000009566 rice Nutrition 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 9
- 239000011888 foil Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000011889 copper foil Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 241001494508 Arundo donax Species 0.000 description 1
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum-silver Chemical compound 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、半導体基板又は配線基板の電極部に接合され
るバンプ付きリードに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a lead with bumps that is bonded to an electrode portion of a semiconductor substrate or a wiring board.
[従来の技術]
従来、半導体基板又は配線基板の電極部にリードを接合
するために、第5図に示すようにハンダや金などの軟質
金属を素材とするバンプ(突起)をリードに予め設け、
このバンプと配線電極とを接合する接合方式がある。[Prior Art] Conventionally, in order to bond the leads to the electrode portions of a semiconductor substrate or a wiring board, bumps (protrusions) made of soft metal such as solder or gold are provided on the leads in advance, as shown in FIG. ,
There is a bonding method for bonding these bumps and wiring electrodes.
この方式において用いられるバンプ付きリードとして、
第6図に示すようにリードの先端部を所定形状にエツチ
ングしてバンプを形成する例や、特開昭62’−299
241号公報に開示されるようにリードをエツチングし
て形成したバンプの接合面を筋目又は網目状に粗面化す
る例などが知られている。As the bumped lead used in this method,
As shown in FIG. 6, there is an example in which a bump is formed by etching the tip of a lead into a predetermined shape, and in JP-A No. 62'-299
As disclosed in Japanese Patent No. 241, an example is known in which the bonding surface of a bump formed by etching a lead is roughened into a line or mesh pattern.
[発明が解決しようとする課題]
しかしながら、上述したようなバンプ付きリードではリ
ードの所定位置に微小なバンプを形成するために、溶融
金属液粒をリードに正確に付着させたりリードをエツチ
ングしたすせねばならす、工程が複雑化しコストが増大
する欠点がある。特に、近時の液晶表示素子や半導体基
板などでは多電極化が進行しており、バンプ付きリード
による電極とリードとの接続を簡単化、低コスト化する
ことか望まれている。また、従来技術ではバンブー状の
変更が容易ではないという欠点もあった。[Problems to be Solved by the Invention] However, in the above-mentioned bumped leads, in order to form minute bumps at predetermined positions on the leads, it is difficult to accurately attach molten metal droplets to the leads or to etch the leads. However, the disadvantage is that the process becomes complicated and the cost increases. In particular, as recent liquid crystal display elements and semiconductor substrates are becoming increasingly multi-electrode, it is desired to simplify and reduce the cost of connecting electrodes and leads using bumped leads. In addition, the conventional technology has the disadvantage that it is not easy to change the bamboo shape.
本発明は、上記問題点に鑑みなされたものであり、製造
及び接合が容易で、かつ、バンプ形状の変更が容易なバ
ンプ付きリードを提供することを、目的としている。The present invention has been made in view of the above problems, and an object of the present invention is to provide a lead with bumps that is easy to manufacture and join, and whose bump shape can be easily changed.
[課題を解決するための手段]
本発明のバンプ付きリードは、半導体基板又は配線基板
の電極部に接合するためのバンプをリードの所定位置に
有するバンプ付きリードにおいて、前記バンプは、接合
面が凸面で反対面が凹面からなる椀状の打出し突起で構
成されていることを特徴としている。[Means for Solving the Problems] The bumped lead of the present invention has a bump at a predetermined position of the lead for bonding to an electrode portion of a semiconductor substrate or a wiring board, wherein the bump has a bonding surface. It is characterized by a bowl-shaped protrusion with a convex surface and a concave surface on the opposite side.
本発明のバンプ付きリードの製造方法は、前記凹面に合
った形状の凸状押圧突起を有する抑圧具により前記リー
ドを打出して、前記打出し突起を形成することを特徴と
している。The method for manufacturing a lead with a bump according to the present invention is characterized in that the lead is punched out using a suppressor having a convex pressing projection having a shape that matches the concave surface to form the punching projection.
本発明のバンプ付きリードの接合方法は、前記押圧具に
より前記打出し突起を打出した後、前記抑圧具を前記凹
面と接触させたまま前記電極部に圧接することを特徴と
している。The method for joining a lead with a bump according to the present invention is characterized in that after the pressing tool presses out the ejecting protrusion, the suppressing tool is pressed against the electrode portion while being in contact with the concave surface.
[作用]
本発明のバンブーリードでは、バンプはリード先端部に
設りられだ椀状の打出し突起からなるので、簡単な打出
し工程により形成でき製造性に富む特徴を有している。[Function] In the bamboo reed of the present invention, since the bump is formed of a bowl-shaped ejected protrusion provided at the tip of the reed, it can be formed by a simple ejecting process and has a feature of high manufacturability.
また、バンプを電極に接合する場合、椀状の突起の凹面
側に接合用の押圧具をはめこむことができるので、接合
用の押圧具とバンプとの位置ずれがなく押圧力は適切に
接合面に伝えられる。In addition, when bonding bumps to electrodes, the bonding press can be fitted into the concave side of the bowl-shaped protrusion, so there is no misalignment between the bonding press and the bump, and the pressing force is applied appropriately. It can be conveyed on the surface.
更に、打出し用の押圧具によりバンプを打出した後、こ
の打出し用の押圧具とバンプとを接触させたまま打出し
用の押圧具によりバンプを電極に圧接すれば、バンプと
電極との接合に際して接合用の抑圧具とバンプとの位置
合せがいらない。Furthermore, after a bump is driven out by a pressing tool for driving out, if the bump is pressed against an electrode by a pressing tool for driving out while the pressing tool for driving out is in contact with the bump, the contact between the bump and the electrode is improved. There is no need to align the bonding suppressor and the bump during bonding.
[実施例]
(第1実施例)
本発明のバンプ付きリードの一実施例を一部切断じて第
1図に示す。[Example] (First Example) An example of the bumped lead of the present invention is partially cut away and shown in FIG.
このバンプ付きリードは、リード10の先端部に押圧具
によりリード主面と直角に打出された椀状の突起からな
るバンプー1を有している。ガラス基板2上には配線電
極3か設(プられており、バンプ11の凸面は配線電極
3の先端部に圧接されている。This bumped lead has a bump 1 formed of a bowl-shaped protrusion that is pressed out at a right angle to the main surface of the lead by a pressing tool at the distal end of the lead 10. Wiring electrodes 3 are provided on the glass substrate 2, and the convex surfaces of the bumps 11 are pressed against the tips of the wiring electrodes 3.
リード10は厚さ35μmの銅箔製であって表面に厚さ
2μmの金めつき層が形成されている。The lead 10 is made of copper foil with a thickness of 35 μm, and a gold plating layer with a thickness of 2 μm is formed on the surface.
リード10の横幅は125μmに設計されている。The width of the lead 10 is designed to be 125 μm.
バンプー1は最大直径dが80μm、接合前の突起高さ
が30μmになっている。The bump 1 has a maximum diameter d of 80 μm and a protrusion height of 30 μm before bonding.
以下、第2図(a)〜(f)の順に、このバンプ付きリ
ートの製造方法及び接合方法を説明する。The manufacturing method and joining method of this bumped REET will be described below in the order of FIGS. 2(a) to 2(f).
まず、リード10の先端部と、押圧具4の凸部4a及び
ダイ5の穴部5aとを位置合わせする(第2図(a)参
照)。First, the tip of the lead 10 is aligned with the protrusion 4a of the pressing tool 4 and the hole 5a of the die 5 (see FIG. 2(a)).
次に、リード10を押圧具4の凸部4aによりダイ5の
穴部5aに押圧して陥没させ、打出し突起形状のバンプ
ー1を形成する(第2図(b)参照〉。Next, the lead 10 is pressed into the hole 5a of the die 5 by the convex part 4a of the pressing tool 4, thereby forming the bump 1 in the shape of a punched protrusion (see FIG. 2(b)).
次に、押圧具4の凸部4aとバンプー1が接触した状態
で、押圧具4及びバンプー1をダイ5から引き上げる(
第2図(C)参照)。Next, with the protrusion 4a of the pressing tool 4 and the bumpy 1 in contact with each other, the pressing tool 4 and the bumpy 1 are pulled up from the die 5 (
(See Figure 2(C)).
次に、ダイ5を押圧具4の直下から引き去ると同時に、
ブロック6に載せた基板2の電極部3aと押圧具4の凸
部4aとを位置合わせする(第2図(d)参照)。Next, at the same time as removing the die 5 from directly below the pressing tool 4,
The electrode portion 3a of the substrate 2 placed on the block 6 and the convex portion 4a of the pressing tool 4 are aligned (see FIG. 2(d)).
次に、押圧具4を下降させて、配線電極3の先端部の電
極部3aにバンプー1を押し当てて、ボンディング(圧
着)する(第2図(e)参照〉。Next, the pressing tool 4 is lowered and the bump 1 is pressed against the electrode portion 3a at the tip of the wiring electrode 3 for bonding (crimping) (see FIG. 2(e)).
このときの押圧力は20〜80CIf程度、加圧時間は
0・1秒程度である。またブロック6を加熱して、基板
2は250’C程度に加熱されている。The pressing force at this time is about 20 to 80 CIf, and the pressing time is about 0.1 second. Further, the block 6 is heated, and the substrate 2 is heated to about 250'C.
押圧具4は基板と同程度の温度に加熱したり、0゜2W
程度の超音波振動を加えて圧着力を向上させることも可
能である。The pressing tool 4 is heated to the same temperature as the substrate, or heated to 0°2W.
It is also possible to improve the pressure bonding force by adding some degree of ultrasonic vibration.
以上ににす、第3図(f>のごとく、リード1Oと電極
部3aとがバンプ11によって接続される。In conclusion, as shown in FIG. 3 (f>), the lead 1O and the electrode portion 3a are connected by the bumps 11.
したがって本発明によれば、従来よりバンプの形成か簡
単であり、しかも、抑圧具4が打出し時と接合時に共用
できるので、バンプ形成から接続までが1台の機械上で
連続的に行なうことができ、コストが大幅に低減できる
。Therefore, according to the present invention, it is easier to form bumps than in the past, and since the suppressor 4 can be used both for punching and bonding, processes from bump formation to connection can be performed continuously on one machine. , and costs can be significantly reduced.
(第2実施例) 本発明の他の実施例を第3図は示す。(Second example) Another embodiment of the invention is shown in FIG.
第3図(a)はり一ド10aの上面に厚さ20μmの熱
軟化性の樹脂層7を備えたリードを示す。FIG. 3(a) shows a lead having a heat-softening resin layer 7 with a thickness of 20 μm on the upper surface of the lead 10a.
第3図(b)は、リード10aにバンプ11aを打出す
工程を示す。この場合、押圧具4の凸部4aの外周に溝
4bを設け、抑圧具4を加熱したり超音波振動を加えて
押圧することににす、押圧具4の凸部4aの直下の樹脂
層7は押圧具4の溝部4bに押し出されるようになって
おり、これによってバンプ11aが形成されるリード部
分仝体の変形がスムーズになる。つまり、安定した形状
のバンプ11aが形成できる。なお、このために押圧具
4の凸部4aの先端部を山形状にすることも有効である
。FIG. 3(b) shows the process of punching out bumps 11a on leads 10a. In this case, a groove 4b is provided on the outer periphery of the convex portion 4a of the presser 4, and the resin layer immediately below the convex portion 4a of the presser 4 is pressed by heating or applying ultrasonic vibration to the suppressor 4. 7 is pushed out into the groove 4b of the pressing tool 4, thereby smoothing the deformation of the lead portion where the bump 11a is formed. In other words, bumps 11a having a stable shape can be formed. For this purpose, it is also effective to form the tip of the convex portion 4a of the pressing tool 4 into a mountain shape.
次に第3図(C)は、接続時の状態を示すが、接続のた
めの基本的な因子は前述した第2図(e)と同様とする
ことができる。Next, FIG. 3(C) shows the state at the time of connection, but the basic factors for connection can be the same as those in FIG. 2(e) described above.
(第3実施例) 本発明の他の実施例を第4図は示す。(Third example) Another embodiment of the invention is shown in FIG.
このバンプ付きリードは、リード90の先端部に抑圧具
によりリード主面と直角に打出された椀状の突起からな
るバンプ91を有している。半導体基板21上には層間
絶縁膜22とパッシベーション膜23との間にアルミコ
ンタクト電極30が設けられており、バンプ91に接続
されている。This bumped lead has a bump 91 at the tip of the lead 90, which is a bowl-shaped protrusion that is pressed out by a suppressor at right angles to the main surface of the lead. An aluminum contact electrode 30 is provided on the semiconductor substrate 21 between the interlayer insulating film 22 and the passivation film 23, and is connected to the bump 91.
リード90は厚さ20μmの銅箔92に厚さ10μmの
はんだ層93を形成させた形状を有し、はんだ層93側
がバンプ接合面となっている。バンプ接合時には、押圧
具及びアルミコンタクト電極30及びリード90を、は
んだ層93が溶融しない程度に加熱して、変形性に富ん
だ状態で実施することが好ましい。もちろん、この場合
も、超音波振動をバンプ91に与えることも可能である
。The lead 90 has a shape in which a 10 μm thick solder layer 93 is formed on a 20 μm thick copper foil 92, and the solder layer 93 side is the bump bonding surface. At the time of bump bonding, it is preferable to heat the pressing tool, the aluminum contact electrode 30, and the lead 90 to such an extent that the solder layer 93 does not melt, so that it is highly deformable. Of course, in this case, it is also possible to apply ultrasonic vibration to the bumps 91.
この実施例によれば、リード90を銅箔92とはんだ箔
93との2層膜により構成しているので、接合時の押圧
力を強化しなくてもバンプ接合面の変形が可能となる。According to this embodiment, since the lead 90 is constituted by a two-layer film of copper foil 92 and solder foil 93, the bump bonding surface can be deformed without increasing the pressing force during bonding.
はんだ箔93の代りに金箔やすず箔などの軟質の金属箔
を設(プでもよい。また、銅箔92の代りにアルミ箔を
用いることも当然可能であり、銅箔92やアルミ箔の両
側に軟質金属箔を貼合わせることもでき、貼合せる代り
にメツキ、真空蒸着を採用することもできる。その他、
リートの主部よりその先端部を薄クシてもにい。Instead of the solder foil 93, a soft metal foil such as gold foil or tin foil may be used. Also, it is naturally possible to use aluminum foil instead of the copper foil 92, and both sides of the copper foil 92 or aluminum foil can be used. It is also possible to laminate a soft metal foil to the laminate, and plating or vacuum deposition can also be used instead of laminate.
Make sure to comb the tip of the leash thinner than the main part.
以上説明したバンプ付リードは、特に、半導体ペアチッ
プのフェースダウン実装に好適であり、また、TAB(
tape automatedbond i ng)
に好適である。なお、アルミ箔にはんだ箔をめつきする
には、例えば、銀入りのはんだ液を保持する噴流式はん
だ槽中で超音波振動による泡で酸化アルミ膜を破ってア
ルミ−銀はんだの3層構造を形成すればよい。The bumped leads described above are particularly suitable for face-down mounting of semiconductor pair chips, and are also suitable for TAB (
tape automated bonding)
suitable for In addition, in order to plate solder foil on aluminum foil, for example, the aluminum oxide film is broken by bubbles caused by ultrasonic vibration in a jet soldering bath that holds a silver-containing solder solution, and a three-layer aluminum-silver solder structure is formed. All you have to do is form.
[発明の効果]
以上説明したように本発明のバンプ付きリードは、椀状
の打出し突起からなるバンプを備えているので、簡単な
打出し工程により形成でき、余分の材料や複雑な工程を
必要とせず製造性に冨む特徴を有している。[Effects of the Invention] As explained above, since the bumped lead of the present invention is provided with a bump consisting of a bowl-shaped punched protrusion, it can be formed by a simple punching process, and unnecessary materials and complicated processes are avoided. It has the characteristics of being easy to manufacture without the need for it.
また、バンプを打出す押圧具形状の変更により、リード
に最適形状のバンプを簡単に形成することができる。Furthermore, by changing the shape of the pressing tool for punching out bumps, it is possible to easily form bumps with an optimal shape on the lead.
更に、押圧具によりバンプを打出しノこ後、押圧具とバ
ンプとを接触させたまま押圧具によりバンプを電極に圧
接すれば、バンプと電極との接合に際して押圧具とバン
プとの位置合せがいらず、均一な押圧力でバンプと電極
とを接合させることかできる。Furthermore, after punching the bump with the pressing tool, if the bump is pressed against the electrode with the pressing tool while keeping the pressing tool and the bump in contact, the positioning of the pressing tool and the bump can be ensured when joining the bump and the electrode. It is possible to bond the bump and the electrode with uniform pressing force.
第1図は本発明のバンプ付きリードの一実施例を示す一
部切断斜視図、第2図及び第3図は本発明のバンプ付き
リードの製造方法及び接合方法を示す工程図、第4図は
本発明のバンプ付きリードの他の実施例を示す断面図、
第5図及び第6図は0
従来のバンプ付リードの断面図で必る。
10・・・リード10
11・・・バンプ
2・・・ガラス基板(配線基板)
3・・・配線電極(電極部)FIG. 1 is a partially cutaway perspective view showing an embodiment of the bumped lead of the present invention, FIGS. 2 and 3 are process diagrams showing the method of manufacturing and joining the bumped lead of the present invention, and FIG. 4 are sectional views showing other embodiments of the bumped lead of the present invention;
5 and 6 are cross-sectional views of conventional bumped leads. 10... Lead 10 11... Bump 2... Glass substrate (wiring board) 3... Wiring electrode (electrode part)
Claims (3)
のバンプをリードの所定位置に有するバンプ付きリード
において、 前記バンプは、接合面が凸面で反対面が凹面からなる椀
状の打出し突起で構成されていることを特徴とするバン
プ付きリード。(1) In a bumped lead having a bump at a predetermined position on the lead for bonding to an electrode portion of a semiconductor substrate or a wiring board, the bump is a bowl-shaped protrusion whose bonding surface is a convex surface and the opposite surface is a concave surface. A bumped reed characterized by being composed of.
圧具により前記リードを打出して、前記打出し突起を形
成する請求項1記載のバンプ付きリードの製造方法。(2) The method of manufacturing a bumped lead according to claim 1, wherein the lead is punched out using a pressing tool having a convex pressing projection having a shape that matches the concave surface to form the punched out projection.
前記押圧具を前記凹面と接触させたまま前記電極部に圧
接する請求項2記載のバンプ付きリードの接合方法。(3) After punching out the punching projection with the pressing tool,
3. The method of joining bumped leads according to claim 2, wherein the pressing tool is pressed against the electrode portion while being in contact with the concave surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6081590A JP2775965B2 (en) | 1990-03-12 | 1990-03-12 | Bonding method for bumped leads |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6081590A JP2775965B2 (en) | 1990-03-12 | 1990-03-12 | Bonding method for bumped leads |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03262141A true JPH03262141A (en) | 1991-11-21 |
JP2775965B2 JP2775965B2 (en) | 1998-07-16 |
Family
ID=13153226
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6081590A Expired - Lifetime JP2775965B2 (en) | 1990-03-12 | 1990-03-12 | Bonding method for bumped leads |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2775965B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08321526A (en) * | 1995-05-26 | 1996-12-03 | Nec Corp | Chip carrier and its manufacture |
JP2018190775A (en) * | 2017-04-28 | 2018-11-29 | 東北マイクロテック株式会社 | Solid-state imaging apparatus |
-
1990
- 1990-03-12 JP JP6081590A patent/JP2775965B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08321526A (en) * | 1995-05-26 | 1996-12-03 | Nec Corp | Chip carrier and its manufacture |
JP2018190775A (en) * | 2017-04-28 | 2018-11-29 | 東北マイクロテック株式会社 | Solid-state imaging apparatus |
Also Published As
Publication number | Publication date |
---|---|
JP2775965B2 (en) | 1998-07-16 |
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