JPH0325946B2 - - Google Patents

Info

Publication number
JPH0325946B2
JPH0325946B2 JP57032006A JP3200682A JPH0325946B2 JP H0325946 B2 JPH0325946 B2 JP H0325946B2 JP 57032006 A JP57032006 A JP 57032006A JP 3200682 A JP3200682 A JP 3200682A JP H0325946 B2 JPH0325946 B2 JP H0325946B2
Authority
JP
Japan
Prior art keywords
region
potential
drain
capacitance
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57032006A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58148450A (ja
Inventor
Satoshi Takano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57032006A priority Critical patent/JPS58148450A/ja
Publication of JPS58148450A publication Critical patent/JPS58148450A/ja
Publication of JPH0325946B2 publication Critical patent/JPH0325946B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57032006A 1982-02-26 1982-02-26 半導体集積回路 Granted JPS58148450A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57032006A JPS58148450A (ja) 1982-02-26 1982-02-26 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57032006A JPS58148450A (ja) 1982-02-26 1982-02-26 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS58148450A JPS58148450A (ja) 1983-09-03
JPH0325946B2 true JPH0325946B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-04-09

Family

ID=12346791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57032006A Granted JPS58148450A (ja) 1982-02-26 1982-02-26 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS58148450A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0644575B2 (ja) * 1984-07-11 1994-06-08 三菱電機株式会社 電界効果トランジスタ
JPS6249671A (ja) * 1985-06-17 1987-03-04 テキサス　インスツルメンツ　インコーポレイテツド ガリウムひ素電界効果トランジスタおよびその製作方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55156461U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1979-04-27 1980-11-11
JPS55156358A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Semiconductor memory device
JPS5698855A (en) * 1980-01-09 1981-08-08 Nec Corp Semiconductor memory device

Also Published As

Publication number Publication date
JPS58148450A (ja) 1983-09-03

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