JPH0324058B2 - - Google Patents
Info
- Publication number
- JPH0324058B2 JPH0324058B2 JP56154591A JP15459181A JPH0324058B2 JP H0324058 B2 JPH0324058 B2 JP H0324058B2 JP 56154591 A JP56154591 A JP 56154591A JP 15459181 A JP15459181 A JP 15459181A JP H0324058 B2 JPH0324058 B2 JP H0324058B2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- interstitial oxygen
- wafer
- semiconductor device
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010438 heat treatment Methods 0.000 claims description 62
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 60
- 229910052760 oxygen Inorganic materials 0.000 claims description 60
- 239000001301 oxygen Substances 0.000 claims description 60
- 230000007547 defect Effects 0.000 claims description 49
- 239000013078 crystal Substances 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 44
- 230000000694 effects Effects 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000001556 precipitation Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15459181A JPS5856344A (ja) | 1981-09-29 | 1981-09-29 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15459181A JPS5856344A (ja) | 1981-09-29 | 1981-09-29 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5856344A JPS5856344A (ja) | 1983-04-04 |
| JPH0324058B2 true JPH0324058B2 (fr) | 1991-04-02 |
Family
ID=15587531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15459181A Granted JPS5856344A (ja) | 1981-09-29 | 1981-09-29 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5856344A (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01312840A (ja) * | 1988-06-10 | 1989-12-18 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP4605876B2 (ja) * | 2000-09-20 | 2011-01-05 | 信越半導体株式会社 | シリコンウエーハおよびシリコンエピタキシャルウエーハの製造方法 |
| JP4463957B2 (ja) * | 2000-09-20 | 2010-05-19 | 信越半導体株式会社 | シリコンウエーハの製造方法およびシリコンウエーハ |
| JP2002289820A (ja) * | 2001-03-28 | 2002-10-04 | Nippon Steel Corp | Ｓｉｍｏｘ基板の製造方法およびｓｉｍｏｘ基板 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5577170A (en) * | 1978-12-06 | 1980-06-10 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Silicon mono-crystal wafer |
-
1981
- 1981-09-29 JP JP15459181A patent/JPS5856344A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5577170A (en) * | 1978-12-06 | 1980-06-10 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Silicon mono-crystal wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5856344A (ja) | 1983-04-04 |
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