JPH03223167A - Production of silicon carbide-based refractory having silicon nitride bond - Google Patents
Production of silicon carbide-based refractory having silicon nitride bondInfo
- Publication number
- JPH03223167A JPH03223167A JP2015855A JP1585590A JPH03223167A JP H03223167 A JPH03223167 A JP H03223167A JP 2015855 A JP2015855 A JP 2015855A JP 1585590 A JP1585590 A JP 1585590A JP H03223167 A JPH03223167 A JP H03223167A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- si3n4
- refractory
- gas
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 25
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 title abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000012298 atmosphere Substances 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 238000010304 firing Methods 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 238000004901 spalling Methods 0.000 abstract description 4
- 238000001354 calcination Methods 0.000 abstract 4
- 239000002075 main ingredient Substances 0.000 abstract 2
- 239000006227 byproduct Substances 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 238000005452 bending Methods 0.000 description 14
- 230000035939 shock Effects 0.000 description 14
- 239000002994 raw material Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 11
- 239000011819 refractory material Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 230000006378 damage Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000013001 point bending Methods 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、窒化珪素結合炭化珪素質耐火物の製造方法に
関するもので、匣鉢、棚板、セッター等の例えば窯道具
類の製造方法に適用される。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a method for manufacturing a silicon nitride-bonded silicon carbide refractory, and is applicable to a method for manufacturing kiln tools such as saggers, shelves, and setters. Applicable.
（従来の技術）
工業用窯炉に用いられる窯道具類は、耐火物からなり、
急熱急冷などの過酷な温度変化を与えると熱衝撃により
中心部と表層部に温度差が生じ。(Prior art) Kiln tools used in industrial kilns are made of refractory materials.
When subjected to severe temperature changes such as rapid heating and cooling, a temperature difference occurs between the center and surface layer due to thermal shock.
熱膨張の差で歪んで破壊することがある。このスポーリ
ングと呼ばれる破壊現象が起こると、棚板やセッター等
の破損により焼成品、窯炉等が大きな損傷を受けるので
、このような損傷が起こらないよう窯道具類に使用する
耐火物材質の選択は適切に行なう必要がある。Differences in thermal expansion can cause distortion and destruction. When this destructive phenomenon called spalling occurs, the fired product, kiln, etc. will be seriously damaged due to breakage of shelves, setters, etc. To prevent this kind of damage, the refractory materials used for kiln tools should be carefully selected. Choices need to be made appropriately.
一般に、窯道具類に使用する従来の窒化珪素結合炭化珪
素質耐火物は、その組成が、例えば窒化珪素１０〜２５
％、二酸化珪素１０〜１５％、炭化珪素６０〜８０％お
よび少量の残存Ｓｉとからなる。In general, conventional silicon nitride-bonded silicon carbide refractories used for kiln tools have a composition of, for example, 10 to 25 silicon nitride.
%, silicon dioxide 10-15%, silicon carbide 60-80% and a small amount of residual Si.
（発明が解決しようとする課題）
しかし、このような従来の窒化珪素結合炭化珪素質耐火
物は、高温酸化雰囲気下で使用した場合の耐酸化性が劣
り、また室温強度および高温強度ともに相対的に低いだ
けでなく、耐熱衝撃性能が劣るため、割れ、亀裂が生じ
やすいので、焼成品の損傷や窯炉の倒壊事故等の問題が
発生しやすい。(Problems to be Solved by the Invention) However, such conventional silicon nitride-bonded silicon carbide refractories have poor oxidation resistance when used in high-temperature oxidizing atmospheres, and have relatively low room-temperature strength and high-temperature strength. Not only does it have a low thermal shock resistance, it is easily cracked and cracked, resulting in problems such as damage to the fired product and the collapse of the kiln.
本発明者はこのような問題点に着目し従来の窒化珪素結
合の炭化珪素質耐火物の組成を調べたところ、前記炭化
珪素質耐火物原料を成形しＮ２ガス中で焼成した耐火物
中には残留Ｓｉが多量に存在していることを確認し、こ
れが−因となって耐火物の耐スポーリング性、耐熱性お
よび高温強度等の緒特性が低下するという知見を得た。The present inventor focused on these problems and investigated the composition of conventional silicon carbide refractories with silicon nitride bonds, and found that in refractories formed from the silicon carbide refractory raw materials and fired in N2 gas, confirmed that a large amount of residual Si was present, and found that this caused a decline in the properties of refractories such as spalling resistance, heat resistance, and high-temperature strength.
本発明が解決しようとする課題は、窒化珪素結合炭化珪
素質耐火物中に残存する残留Ｓｉをなくし、さらに、窒
化珪素による炭化珪素粒子の結合構造を変えることによ
り、耐酸化性、高温強度および耐スポーリング性の良好
な窒化珪素結合炭化珪素質耐火物が得られる製造方法を
提供することにある。The problem to be solved by the present invention is to eliminate residual Si remaining in silicon nitride-bonded silicon carbide refractories, and to improve oxidation resistance, high-temperature strength, and It is an object of the present invention to provide a manufacturing method capable of obtaining a silicon nitride-bonded silicon carbide refractory having good spalling resistance.
（課題を解決するための手段）
そのために、本発明の窒化珪素結合炭化珪素質耐火物の
製造方法は、少なくともＳｉ・５〜２゜ｗｔ％、β−５
ｉｘ Ｎ４ ： Ｉ〜１０ｗ ｔを含有する主成分が
ＳｉＣである成形体をＮ２ガス雰囲気中で焼成すること
を特徴とする。(Means for Solving the Problems) For this purpose, the method for producing a silicon nitride-bonded silicon carbide refractory of the present invention includes at least Si.5 to 2 wt%, β-5
ix N4: It is characterized in that a molded body containing I to 10 wt and whose main component is SiC is fired in an N2 gas atmosphere.
本発明による窒化珪素結合炭化珪素質耐火物の主成分は
炭化珪素であるから、原料組成のうち主成分のＳｉＣは
６０〜９０ｗｔ％にする。Since the main component of the silicon nitride-bonded silicon carbide refractory according to the present invention is silicon carbide, the main component SiC in the raw material composition is set to 60 to 90 wt%.
ＳＬを原料に含むのは、炭化珪素粒子間に混合、２合さ
れたＳｉをＮ２雰囲気下で焼成することにより５ｉ＝Ｎ
−化して、これを結合材とした高靭な耐火物にするため
であり、そのためにＳｉが５ｗｔ％以上必要であり、２
０ｗｔ％を超えるとＳｉが未反応状態で残留しやすくな
るのでこれを避けるためである。SL is included in the raw material by firing Si mixed and combined between silicon carbide particles in an N2 atmosphere to form 5i=N.
- to make a high-tough refractory using this as a binder, and for this purpose, 5 wt% or more of Si is required, and 2
This is to avoid Si remaining in an unreacted state if it exceeds 0 wt%.
β−Ｓｉ、Ｎ４を原料に含むことを必須とするのは耐火
物を高靭にするためβ化率を大にすることが望ましく、
β−５ｉｓＮ４をあらかじめ添加することにより、これ
を種結晶としてβ−５ｉｉＮ４の生成を促進するためで
ある。このようにβ−３ｉｉＮ４をあらかじめ添加して
焼成した場合には、耐熱衝撃性が良好な耐火物が得られ
る。そのためにはβ−８ｉ、Ｎｓが１ｗｔ％以上必要で
あり、このあらかじめ添加するβ−５ｉｘＮ４は難焼結
性であることから１０ｗｔ％以下とする。The reason why it is essential to include β-Si and N4 in the raw materials is that it is desirable to increase the β conversion rate in order to make the refractory high in toughness.
By adding β-5isN4 in advance, this is used as a seed crystal to promote the production of β-5iiN4. When β-3iiN4 is added in advance and fired in this way, a refractory with good thermal shock resistance can be obtained. For this purpose, β-8i and Ns are required to be at least 1 wt%, and since this β-5ixN4 added in advance is difficult to sinter, the content is set at 10 wt% or less.
なお、単に未反応Ｓｉを少なくしたりβ−３ｉｘＮ４化
を促進するために、β−５ｉｘＮ＊をあらかじめ添加す
ることなく焼成反応時間を長くしたり焼成温度を高くす
ることも考えられるが、これらの方法により得られた耐
火物では、良好な耐熱衝撃性が得られなかった。In addition, in order to simply reduce unreacted Si or promote β-3ixN4 formation, it is possible to lengthen the firing reaction time or increase the firing temperature without adding β-5ixN* in advance, but these methods The refractories obtained by this method did not have good thermal shock resistance.
前記ＳｉＣ，Ｓｉおよびβ−５ｔｘＮ４原料に必要に応
じて粘土を１〜１０ｗｔ％添加することもある。粘土を
加えることにより成形性が良好になる。Clay may be added in an amount of 1 to 10 wt% to the SiC, Si and β-5txN4 raw materials as necessary. Adding clay improves moldability.
これらの原料を混合して成形した後、Ｎ２ガス９０ｖｏ
ｆｆ％以上の高温ガス雰囲気中で焼成する。After mixing and molding these raw materials, N2 gas 90vo
Firing is performed in a high temperature gas atmosphere of ff% or higher.
Ｎ２ガス雰囲気としたのは、Ｓｉの高温でＮ２ガスと反
応焼結させ５ｉａＮ４化するためである。The reason for the N2 gas atmosphere is to react and sinter Si with N2 gas at high temperature to form 5iaN4.
そのためにＮ２ガスは純度が高いほうが望ましいが、実
用的には９０ｖｏρ％以上であれば効率よ＜Ｓｉ、Ｎ４
化することができる。焼成時の温度は製品の大きさや焼
成温度カーブ保持時間により変化させるが、Ｎ２とＳｉ
の反応温度は１２００〜１４５０℃の範囲に設定する。For this reason, it is desirable for the N2 gas to have high purity, but in practice, if it is 90voρ% or higher, the efficiency is <Si, N4
can be converted into The temperature during firing varies depending on the size of the product and the firing temperature curve retention time, but N2 and Si
The reaction temperature is set in the range of 1200 to 1450°C.
これは、Ｓ ｉ ｓＮ４化するためには１２００℃以上
の高温であることが必要であり、１４５０℃を超えると
被焼成成形体中のＳｉが気化して耐火物中から消失して
しまうからである。This is because a high temperature of 1200°C or higher is required to convert Si sN4, and if the temperature exceeds 1450°C, the Si in the compact to be fired will vaporize and disappear from the refractory. be.
この焼成方法により耐火物中に強力な窒化珪素結合が造
られるため、耐酸化性、耐熱性、室温曲げ強度および高
温曲げ強度の（！れた窒化珪素結合炭化珪素質耐火物を
得ることができる。This firing method creates strong silicon nitride bonds in the refractory, making it possible to obtain silicon nitride bonded silicon carbide refractories with excellent oxidation resistance, heat resistance, room temperature bending strength, and high temperature bending strength. .
（発明の効果）
本発明の窒化珪素結合炭化珪素質耐火物の製造方法によ
れば、焼成後の耐火物中に残留Ｓｉをな（し、β化率を
大きくし、強力な窒化珪素結合が得られるため、耐酸化
性、耐熱性、高温曲げ強度および耐熱衝撃性の高められ
た高靭な窒化珪素結合炭化珪素質耐火物が製造できる。(Effects of the Invention) According to the method for producing a silicon nitride-bonded silicon carbide refractory of the present invention, residual Si is formed in the refractory after firing, increasing the beta conversion rate and forming strong silicon nitride bonds. As a result, a tough silicon nitride-bonded silicon carbide refractory with improved oxidation resistance, heat resistance, high-temperature bending strength, and thermal shock resistance can be manufactured.
したがって、本発明により造られる窒化珪素結合炭化珪
素質耐火物を用いると、棚板やセッター等の焼成品の損
傷や破損、倒壊事故等の発生率を大幅に低減することが
できるという効果がある。Therefore, the use of the silicon nitride-bonded silicon carbide refractory made according to the present invention has the effect of significantly reducing the incidence of damage, breakage, collapse accidents, etc. of fired products such as shelf boards and setters. .
（実施例） 以下、本発明の実施例について述べる。(Example) Examples of the present invention will be described below.
本発明の原料組成に該当する実施例と、この原料組成か
らはずれる原料組成をもつ比較例を用意し、これらの混
線物を成形し、Ｎ２ガス９ＯｖＯ氾％以上の雰囲気中で
１２００〜１４５０℃の温度で焼成した。この場合の本
発明の実施例と比較例のそれぞれの焼成前の原料組成は
第１表に示すとおりである。An example corresponding to the raw material composition of the present invention and a comparative example having a raw material composition deviating from this raw material composition were prepared, and these mixed products were molded and heated at 1200 to 1450 °C in an atmosphere containing N2 gas of 9 OvO flood% or more. Baked at temperature. In this case, the raw material compositions of the examples of the present invention and the comparative examples before firing are as shown in Table 1.
（以下、余白）。(Hereafter, margin).
得られた実施例１〜７および比較例１〜７のだ成後の組
成を調査した結果は第１表に示すとおりであった。The compositions of the obtained Examples 1 to 7 and Comparative Examples 1 to 7 after formation were investigated and the results are as shown in Table 1.
次に、実施例１〜７および比較例１〜７の焼結体（窒化
珪素結合炭化珪素質耐火物）について、■Ｓｉ、Ｎ、の
β化率、■曲げ強さ（室ａ右よＵ高温）、■熱衝撃性に
ついてそれぞれ試験を行なった。Next, regarding the sintered bodies (silicon nitride-bonded silicon carbide refractories) of Examples 1 to 7 and Comparative Examples 1 to 7, ■β conversion rate of Si and N, ■ bending strength (from room a right to U (high temperature) and (2) thermal shock resistance.
試、Ｍ３＝件
■Ｓｉ、Ｎ４のβ化率
５ｉ−Ｎ４のβ化率はＸ線回折のピーク高さ１しより算
出した。β化率は次式から算出した。Trial, M3=Example ■Si, beta conversion rate of N4 5i - β conversion rate of N4 was calculated from the peak height of X-ray diffraction 1. The β conversion rate was calculated from the following formula.
〔β化率］ ＝Ｃ＋Ｄ／Ａ＋Ｂ＋Ｃ＋ＤＸ１００（％）
・・・（１） 市
記（１）式中、Ａはα−Ｓｉ、Ｎ、の存在を検出する角
度３５．２度のピーク高さを示し、Ｂは同じく角度３４
．５度のピーク高さを示す。またＣはβ−３ｉｉＮ＜の
存在を検出する角度３３．５度のピーク高さを示し、Ｄ
は同じく角度３５．７度のピーク高さを示す。[Beta conversion rate] =C+D/A+B+C+DX100 (%)
... (1) In the formula (1), A indicates the peak height at an angle of 35.2 degrees at which the presence of α-Si, N is detected, and B also indicates the peak height at an angle of 34 degrees.
．． Shows a peak height of 5 degrees. Further, C indicates the peak height at an angle of 33.5 degrees at which the presence of β-3iiN< is detected, and D
also shows a peak height at an angle of 35.7 degrees.
■曲げ強さ
室温曲げ強さおよび高温曲げ強さを日本工業規格（ＪＩ
Ｓ）Ｒ２５７５に準する三点曲げ試験法により測定した
。試験片の大きさは１４０Ｘ３０Ｘ１０ｍｍとした。高
温曲げ強さは、電気炉を１４００℃に加熱し、前記三点
曲げ試験法で測定した。■Bending strength The bending strength at room temperature and the bending strength at high temperature are determined by Japanese Industrial Standards (JI).
S) Measured by three-point bending test method according to R2575. The size of the test piece was 140 x 30 x 10 mm. The high temperature bending strength was measured by heating an electric furnace to 1400° C. and using the three-point bending test method described above.
■熱衝撃性
熱衝撃性の評価は１４０Ｘ１４０Ｘ３０ｍｍの大きさの
試験片を用いた。８００”Ｃに加熱した電気炉に試験片
を入れ、炉からの出入れを繰り返し、何回の繰り返し出
入れにより試験片にクラックが入ったかどうかで評価し
た。第１表中の評価基準は、
０印：６回以上繰り返し出し入れしてもクラック発生な
し、
○印：３〜５回でクラックが入る、
△印：２回でクラックが入る、
Ｘ印：１回でクラックが入る、
とした。(2) Thermal Shock A test piece measuring 140 x 140 x 30 mm was used for evaluation of thermal shock. A test piece was placed in an electric furnace heated to 800"C, and the test piece was taken in and out of the furnace repeatedly, and evaluated based on how many times the test piece cracked. The evaluation criteria in Table 1 were as follows: 0 mark: No cracks occur even after repeated insertion and removal 6 times or more, ○ mark: Cracks appear after 3 to 5 times, △ mark: Cracks appear after 2 times, X mark: Cracks occur after 1 time.
試ｙ目り來 結果は第１表に示すとおりである。The trial is coming The results are shown in Table 1.
第１表に示されるように、比較例１は原料中のＳｉＣの
過多およびβ−３１ｓ Ｎ４無含有により室温曲げ強さ
および１４００℃の高温曲げ強さともに実施例１〜７に
比べ相対的に低い、また熱衝撃性は不良であった。比較
例２および比較性３はβ−３ｉｓＮ４を無含有のもので
、曲げ強さおよび熱衝撃性が不良であった。比較例４は
原料中にβ−３ｉｓＮ４の過多が原因の一つとなって曲
げ強さおよび熱衝撃性が不良であった。比較例５につい
ても比較例４と同様の理由により曲げ強さおよび熱衝撃
性が不良であった。比較例６および比較例７は、Ｓｉの
過多により曲げ強さおよび熱衝撃性が不良であった。As shown in Table 1, Comparative Example 1 has both room temperature bending strength and high temperature bending strength of 1400°C relatively compared to Examples 1 to 7 due to the excessive amount of SiC in the raw material and the absence of β-31s N4. The thermal shock resistance was low and poor. Comparative Example 2 and Comparative Example 3 did not contain β-3isN4 and had poor bending strength and thermal shock resistance. Comparative Example 4 had poor bending strength and thermal shock resistance, partly due to excessive β-3isN4 in the raw material. Comparative Example 5 also had poor bending strength and thermal shock resistance for the same reasons as Comparative Example 4. Comparative Examples 6 and 7 had poor bending strength and thermal shock resistance due to excessive Si content.
これに対し、本発明の実施例１〜７では、窒化珪素結合
炭化珪素質耐大物原料に適量なβ−５ｉｓＮ４を添加し
たので、焼成後の耐火物中に残留Ｓｊが存在せずに窒化
珪素結合が促進されたため、室温強度および高温強度な
らびに熱衝撃性が良好なものになったものと考えられる
。On the other hand, in Examples 1 to 7 of the present invention, an appropriate amount of β-5isN4 was added to the silicon nitride-bonded silicon carbide large-sized refractory raw material, so that no residual Sj existed in the fired refractory and silicon nitride It is thought that because the bonding was promoted, the room temperature strength, high temperature strength, and thermal shock resistance were improved.
Claims (1)
Ｎ＿４：１〜１０ｗｔ％を含有する主成分がＳｉＣであ
る成形体をＮ＿２ガス雰囲気中で焼成することを特徴と
する窒化珪素結合炭化珪素質耐火物の製造方法。(1) At least Si: 5 to 20 wt%, β-Si_3
A method for producing a silicon nitride-bonded silicon carbide refractory, which comprises firing a molded body whose main component is SiC containing 1 to 10 wt% of N_4 in an N_2 gas atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015855A JPH0745341B2 (en) | 1990-01-25 | 1990-01-25 | Method for manufacturing silicon nitride-bonded silicon carbide refractory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015855A JPH0745341B2 (en) | 1990-01-25 | 1990-01-25 | Method for manufacturing silicon nitride-bonded silicon carbide refractory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03223167A true JPH03223167A (en) | 1991-10-02 |
| JPH0745341B2 JPH0745341B2 (en) | 1995-05-17 |
Family
ID=11900423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015855A Expired - Lifetime JPH0745341B2 (en) | 1990-01-25 | 1990-01-25 | Method for manufacturing silicon nitride-bonded silicon carbide refractory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0745341B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007094290A1 (en) * | 2006-02-14 | 2007-08-23 | Matsushita Electric Industrial Co., Ltd. | Plasma display panel manufacturing method and substrate supporting table used in such method |
| WO2009110400A1 (en) * | 2008-03-05 | 2009-09-11 | 日本碍子株式会社 | Kiln tool plate for firing ceramic |
| CN109206138A (en) * | 2018-10-26 | 2019-01-15 | 武汉工程大学 | A kind of preparation method of the silicon-carbide particle of high sphericity |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2785666B1 (en) | 2011-11-29 | 2019-09-18 | Corning Incorporated | Method of treating joint in ceramic assembly |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5888169A (en) * | 1981-11-16 | 1983-05-26 | 電気化学工業株式会社 | Manufacture of silicon carbide-silicon nitride formed article |
| JPS6330366A (en) * | 1986-07-23 | 1988-02-09 | 株式会社日立製作所 | Manufacture of silicon nitride-silicon carbide base composite material |
-
1990
- 1990-01-25 JP JP2015855A patent/JPH0745341B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5888169A (en) * | 1981-11-16 | 1983-05-26 | 電気化学工業株式会社 | Manufacture of silicon carbide-silicon nitride formed article |
| JPS6330366A (en) * | 1986-07-23 | 1988-02-09 | 株式会社日立製作所 | Manufacture of silicon nitride-silicon carbide base composite material |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007094290A1 (en) * | 2006-02-14 | 2007-08-23 | Matsushita Electric Industrial Co., Ltd. | Plasma display panel manufacturing method and substrate supporting table used in such method |
| US7766715B2 (en) | 2006-02-14 | 2010-08-03 | Panasonic Corporation | Method of manufacturing plasma display panel and setter for substrate used therein |
| WO2009110400A1 (en) * | 2008-03-05 | 2009-09-11 | 日本碍子株式会社 | Kiln tool plate for firing ceramic |
| EP2251628A1 (en) * | 2008-03-05 | 2010-11-17 | NGK Insulators, Ltd. | Kiln tool plate for firing ceramic |
| CN101960245A (en) * | 2008-03-05 | 2011-01-26 | 日本碍子株式会社 | Kiln tool plate for firing ceramic |
| JP5412421B2 (en) * | 2008-03-05 | 2014-02-12 | 日本碍子株式会社 | Ceramic kiln tool plate |
| EP2251628A4 (en) * | 2008-03-05 | 2014-07-30 | Ngk Insulators Ltd | Kiln tool plate for firing ceramic |
| CN105115304A (en) * | 2008-03-05 | 2015-12-02 | 日本碍子株式会社 | Kiln tool plate for firing ceramic material |
| US9279618B2 (en) | 2008-03-05 | 2016-03-08 | Ngk Insulators, Ltd. | Kiln tool plate for firing ceramic material |
| CN105115304B (en) * | 2008-03-05 | 2018-03-20 | 日本碍子株式会社 | kiln tool plate for firing ceramic |
| CN109206138A (en) * | 2018-10-26 | 2019-01-15 | 武汉工程大学 | A kind of preparation method of the silicon-carbide particle of high sphericity |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0745341B2 (en) | 1995-05-17 |
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