JP3373312B2 - SiC-based kiln tool and method of manufacturing the same - Google Patents

SiC-based kiln tool and method of manufacturing the same

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Publication number
JP3373312B2
JP3373312B2 JP32526794A JP32526794A JP3373312B2 JP 3373312 B2 JP3373312 B2 JP 3373312B2 JP 32526794 A JP32526794 A JP 32526794A JP 32526794 A JP32526794 A JP 32526794A JP 3373312 B2 JP3373312 B2 JP 3373312B2
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Japan
Prior art keywords
sic
weight
powder
temperature
kiln tool
Prior art date
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Expired - Lifetime
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JP32526794A
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Japanese (ja)
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JPH08178548A (en
Inventor
浩 白川
治 山川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
NGK Adrec Co Ltd
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NGK Insulators Ltd
NGK Adrec Co Ltd
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Priority to JP32526794A priority Critical patent/JP3373312B2/en
Priority to TW084102042A priority patent/TW310316B/zh
Priority to KR1019950005228A priority patent/KR100356736B1/en
Priority to CN95103594A priority patent/CN1106565C/en
Publication of JPH08178548A publication Critical patent/JPH08178548A/en
Application granted granted Critical
Publication of JP3373312B2 publication Critical patent/JP3373312B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64Burning or sintering processes
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D5/00Supports, screens, or the like for the charge within the furnace
    • F27D5/0031Treatment baskets for ceramic articles
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3208Calcium oxide or oxide-forming salts thereof, e.g. lime
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3239Vanadium oxides, vanadates or oxide forming salts thereof, e.g. magnesium vanadate
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Furnace Charging Or Discharging (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、陶磁器、タイル等の焼
成に使用される棚板、敷板等の窯道具に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a kiln tool such as a shelf board or a floor board used for firing ceramics and tiles.

【0002】[0002]

【従来の技術】従来、炭化珪素(SiC)質耐火物は、
その優れた耐熱性及び耐火性から工業上重要な位置を占
めており、例えば陶磁器焼成用の棚板、敷板、サヤ、そ
の他の窯道具などに多用されている。このようなSiC
質耐火物の一種として、SiC粒子を微量の金属酸化物
等とともに混練・成形し、酸化性雰囲気で焼成すること
により、SiC粒子を部分的に酸化させ、その部分酸化
により生じた二酸化珪素(SiO2)によってSiC粒
子を結合させてなる、いわゆる酸化物結合SiC質耐火
物が知られている。この酸化物結合SiC質焼結体は、
安価であることなどから、陶磁器焼成用の窯道具として
広く使用されている。
2. Description of the Related Art Conventionally, silicon carbide (SiC) -based refractory materials are
Because of its excellent heat resistance and fire resistance, it occupies an important position in industry, and is widely used, for example, for shelf boards, floor boards, sheaths, and other kiln tools for firing ceramics. Such SiC
As a kind of high-quality refractory, SiC particles are kneaded and molded together with a small amount of a metal oxide and the like, and the SiC particles are partially oxidized by firing in an oxidizing atmosphere. A so-called oxide-bonded SiC refractory, which is formed by bonding SiC particles by 2 ), is known. This oxide-bonded SiC-based sintered body is
It is widely used as a kiln tool for firing ceramics because it is inexpensive.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、酸化物
結合SiC質耐火物は、SiC粒子を窒化珪素等からな
る結合材で結合させてなる、いわゆる窒化物結合SiC
質耐火物や、再結晶型SiC質耐火物に比して強度レベ
ルが低く、耐スポール性も悪いため、一般的に短寿命で
あった。また、最近は生産効率の向上や省エネなどのた
め迅速焼成が行われることが多く、窯道具に対する負荷
も大きくなってきている。このような背景から、酸化物
結合SiC質耐火物の耐スポール性、耐酸化性、耐クリ
ープ性等の特性改善が求められているが、これらの諸特
性の改善には相反する要素が多く、互いにバランスよく
向上させることが難しかった。本発明は、上記のような
従来の事情を鑑みてなされたものであり、耐スポール
性、耐酸化性、耐クリープ性等の窯道具として求められ
る諸特性をバランスよく向上させた酸化物結合SiC質
の窯道具とその製造方法を提供することを目的とする。
However, the oxide-bonded SiC refractory is a so-called nitride-bonded SiC formed by bonding SiC particles with a binder made of silicon nitride or the like.
As compared with high quality refractory materials and recrystallized SiC quality refractory materials, the strength level was low and spall resistance was poor, so that the life was generally short. In addition, recently, rapid firing is often performed to improve production efficiency and save energy, and the load on kiln tools is also increasing. From such a background, improvement in properties such as spall resistance, oxidation resistance, and creep resistance of oxide-bonded SiC refractory is required, but there are many contradictory factors in improving these characteristics, It was difficult to improve each other in a balanced manner. The present invention has been made in view of the above conventional circumstances, and oxide-bonded SiC in which various characteristics required for a kiln tool such as spall resistance, oxidation resistance, and creep resistance are improved in a well-balanced manner. The object is to provide a quality kiln tool and a manufacturing method thereof.

【0004】[0004]

【課題を解決するための手段】本発明によれば、最大粒
径が4mm以下であるSiC粉末に対し、0.01〜0.
7重量%のV25、0.01〜0.7重量%のCaO及
び0.01〜5重量%の粘土を添加して得た粉体を成形
し、これを焼成してなるSiC質窯道具であって、当該
SiC質窯道具の表層部と中心部とをそれぞれX線回折
で粉末法により測定して、CuKα線に対する2θが3
4.0゜である炭化珪素の回折ピークの高さに対する、
2θが21.9゜であるクリストバライトの回折ピーク
の高さの比を求めたとき、表層部の上記比の値に対する
中心部の上記比の値の割合が20%以上であり、常温に
おける抗折強度が、1400℃における抗折強度の±2
0%の範囲内にあることを特徴とするSiC質窯道具、
が提供される。
According to the present invention, a SiC powder having a maximum particle size of 4 mm or less is 0.01 to 0.
7 wt% of V 2 O 5, by forming a powder obtained by adding 0.01 to 0.7 wt% of CaO and 0.01 to 5 wt% of clay, SiC quality obtained by firing the A kiln tool, in which the surface layer portion and the central portion of the SiC-based kiln tool were measured by powder method by X-ray diffraction, and 2θ for CuKα ray was 3
For the height of the diffraction peak of silicon carbide which is 4.0 °,
When the ratio of the heights of diffraction peaks of cristobalite with 2θ of 21.9 ° was calculated, the ratio of the above ratio value in the central part to the above ratio value in the surface layer part was 20% or more, and the bending strength at room temperature was measured. Strength is ± 2 of bending strength at 1400 ℃
SiC quality kiln tool characterized by being in the range of 0%,
Will be provided.

【0005】また、本発明によれば、最大粒径が4mm以
下であるSiC粉末に対し、0.01〜0.7重量%の
25、0.01〜0.7重量%のCaO及び0.01
〜5重量%の粘土を添加して得た粉体を、適量の水及び
有機バインダーとともに混練して、これを所望形状に成
形し、得られた成形体を乾燥後、700〜1100℃の
温度域を10時間以上かけて昇温しながら焼成し、更に
最高温度が1300〜1500℃の範囲にあり、かつ1
300℃以上の温度域が2〜10時間になるような条件
で引き続き焼成を行うことを特徴とするSiC質窯道具
の製造方法、が提供される。
Further, according to the present invention, 0.01 to 0.7% by weight of V 2 O 5 and 0.01 to 0.7% by weight of CaO are added to the SiC powder having the maximum particle size of 4 mm or less. And 0.01
The powder obtained by adding ~ 5% by weight of clay is kneaded together with an appropriate amount of water and an organic binder, and this is molded into a desired shape. After drying the obtained molded body, the temperature is 700 to 1100 ° C. The temperature is raised over 10 hours while firing, and the maximum temperature is in the range of 1300 to 1500 ° C, and 1
Provided is a method for producing a SiC-based kiln tool, which is characterized in that firing is continuously performed under a condition that a temperature range of 300 ° C. or higher is 2 to 10 hours.

【0006】[0006]

【作用】本発明のSiC質窯道具は、最大粒径が4mm以
下であるSiC粉末に対し、0.01〜0.7重量%の
25、0.01〜0.7重量%のCaO及び0.01
〜5重量%の粘土を添加して得た粉体を用いて作製され
たものである。このような粉体を用い、後述の製造方法
に示す条件にて作製されたSiC質窯道具は、以下のよ
うな性質を有する。
The SiC-based kiln tool of the present invention has a maximum particle size of 4 mm or less with respect to SiC powder of 0.01 to 0.7% by weight of V 2 O 5 and 0.01 to 0.7% by weight. CaO and 0.01
It was produced using powder obtained by adding ~ 5% by weight of clay. An SiC-based kiln tool manufactured using such powder under the conditions shown in the manufacturing method described later has the following properties.

【0007】すなわち、このSiC質窯道具の表層部と
中心部とをそれぞれX線回折で粉末法により測定して、
CuKα線に対する2θが34.0゜である炭化珪素の
回折ピークの高さに対する、2θが21.9゜であるク
リストバライトの回折ピークの高さの比を求めたとき、
表層部の上記比の値に対する中心部の上記比の値の割合
が20%以上である。
That is, the surface layer portion and the central portion of this SiC-based kiln tool were measured by X-ray diffraction by the powder method,
When the ratio of the height of the diffraction peak of cristobalite having a 2θ of 21.9 ° to the height of the diffraction peak of silicon carbide having a 2θ of 34.0 ° with respect to CuKα rays is calculated,
The ratio of the value of the ratio of the central portion to the value of the ratio of the surface layer portion is 20% or more.

【0008】上記粉体を成形して、酸化雰囲気中で焼成
すると、SiC粒子が部分酸化してSiO2が生成し、
これがCaOやV25からなる微量の金属酸化物フラッ
クスと反応して強固な結合相を形成し、SiC粒子を結
合する。この際、SiCの酸化により生じたSiO
2は、一部がガラス質からクリストバライトに転移し副
相として残存するが、窯道具の表層部と中心部とでこの
クリストバライトの存在量に差がありすぎると、クリス
トバライト変態時の膨張・収縮による熱応力が大きくな
って耐スポール性が悪くなる。そこで、本発明において
は、表層部と中心部とで、上記のような比の値について
の関係を規定した。上記のような比の値についての関係
を満たす場合には、良好な耐スポール性が得られる。
When the above powder is molded and fired in an oxidizing atmosphere, the SiC particles are partially oxidized to produce SiO 2 .
This reacts with a trace amount of a metal oxide flux composed of CaO or V 2 O 5 to form a strong bonding phase and bond the SiC particles. At this time, SiO generated by oxidation of SiC
In No. 2 , a part of it transforms from vitreous to cristobalite and remains as a subphase, but if there is too much difference in the amount of cristobalite between the surface layer and the center of the kiln tool, it may be due to expansion / contraction during cristobalite transformation. Thermal stress increases and spall resistance deteriorates. Therefore, in the present invention, the relationship between the surface layer portion and the central portion with respect to the above-described ratio value is defined. Good spall resistance can be obtained when the above relation of the ratio values is satisfied.

【0009】なお、本発明において、表層部とは窯道具
の表面から肉厚の1/3までの部分をいい、中心部とは
窯道具の肉厚の1/3の厚さの厚さ方向における中心部
分をいうものとする。
In the present invention, the surface layer portion is a portion from the surface of the kiln tool to 1/3 of the wall thickness, and the center portion is the thickness direction of 1/3 of the wall thickness of the kiln tool. It means the central part of.

【0010】また、本発明のSiC質窯道具は、常温に
おける抗折強度が、1400℃における抗折強度の±2
0%の範囲内にある。例えば、1400℃における抗折
強度が500kg/cm2だとすると、常温における抗折強度
は400〜600kg/cm2である。常温と1400℃にお
ける抗折強度の関係を上記のように規定したのは、常温
と熱間との強度差が大きくなり、温度に対する強度特性
がアンバランスになると、耐スポール性が低下するから
である。すなわち、常温における抗折強度が、1400
℃における抗折強度の±20%の範囲にない場合には、
耐スポール性が低下するという不具合が生じる。
Further, the SiC kiln tool of the present invention has a bending strength at room temperature of ± 2 of the bending strength at 1400 ° C.
It is within the range of 0%. For example, flexural strength Datosuruto 500 kg / cm 2 at 1400 ° C., bending strength at room temperature is 400~600kg / cm 2. The relationship between the bending strength at room temperature and 1400 ° C. is defined as above because the strength difference between the room temperature and the heat becomes large, and when the strength characteristics with respect to temperature become unbalanced, the spall resistance decreases. is there. That is, the bending strength at room temperature is 1400.
If the bending strength at ℃ is not within ± 20%,
This causes a problem that the spall resistance is reduced.

【0011】次に、本発明のSiC質窯道具の製造方法
について説明する。本発明のSiC質窯道具は、最大粒
径が4mm以下であるSiC粉末に対し、0.01〜0.
7重量%のV25、0.01〜0.7重量%のCaO及
び0.01〜5重量%の粘土を添加して得た粉体を用い
て作製する。
Next, a method for manufacturing the SiC-based kiln tool of the present invention will be described. The SiC-based kiln tool of the present invention has a maximum particle size of 0.01 to 0.
It is prepared using a powder obtained by adding 7 wt% V 2 O 5 , 0.01 to 0.7 wt% CaO and 0.01 to 5 wt% clay.

【0012】通常、SiC質窯道具、例えば棚板の肉厚
は10〜20mm程度であるので、その特性上、及び生産
技術上の観点から、骨材となるSiC粉末の最大粒径は
4mm以下、好ましくは3mm以下とした。なお、SiC粉
末の粒度範囲としては、500μ以上が35〜50重量
%、88〜500μが20〜30重量%、88μ以下が
30〜35重量%であることが、窯道具に適しており好
ましい。
Usually, since the thickness of a SiC-based kiln tool, for example, a shelf board is about 10 to 20 mm, the maximum particle size of the SiC powder as an aggregate is 4 mm or less from the viewpoint of its characteristics and production technology. , Preferably 3 mm or less. In addition, as a particle size range of the SiC powder, it is preferable that 500 μ or more is 35 to 50% by weight, 88 to 500 μ is 20 to 30% by weight, and 88 μ or less is 30 to 35% by weight, which is suitable for a kiln tool.

【0013】このSiC粉末に添加される成分のうち、
25は焼成時において酸化促進剤として作用し、内部
酸化を促して表層部との酸化程度の差を小さくする。ま
た、V25はSiC粒子の部分酸化により生成したSi
2と反応して窯道具の表面にガラス質の被膜を形成
し、窯道具内部への酸素の浸入を防いで耐酸化性を向上
させる。なお、SiC粉末に対するV25の添加量は
0.01〜0.7重量%、好ましくは0.01〜0.5
重量%、更に好ましくは0.01〜0.3重量%とす
る。0.01重量%未満では前記効果が不十分であり、
0.7重量%を超えると表面酸化が進みすぎ、内部酸化
が少なくなる。
Of the components added to this SiC powder,
V 2 O 5 acts as an oxidation promoter during firing and promotes internal oxidation to reduce the difference in the degree of oxidation with the surface layer portion. V 2 O 5 is Si produced by partial oxidation of SiC particles.
It reacts with O 2 to form a glassy film on the surface of the kiln tool, preventing oxygen from penetrating inside the kiln tool and improving oxidation resistance. The amount of V 2 O 5 added to the SiC powder is 0.01 to 0.7% by weight, preferably 0.01 to 0.5.
%, And more preferably 0.01 to 0.3% by weight. If the amount is less than 0.01% by weight, the above effect is insufficient,
If it exceeds 0.7% by weight, surface oxidation proceeds too much and internal oxidation decreases.

【0014】CaOは、ガラスの生成を容易にする作用
があり、V25と同様に耐酸化性の向上に寄与する。S
iC粉末に対するCaOの添加量は0.01〜0.7重
量%、好ましくは0.01〜0.5重量%、更に好まし
くは0.01〜0.3重量%とする。0.01重量%未
満では前記効果が不十分であり、0.7重量%を超える
と生成したガラスの粘性が低下し、耐ベンド性が低下す
る。
CaO has a function of facilitating the formation of glass and contributes to the improvement of oxidation resistance like V 2 O 5 . S
The amount of CaO added to the iC powder is 0.01 to 0.7% by weight, preferably 0.01 to 0.5% by weight, and more preferably 0.01 to 0.3% by weight. If it is less than 0.01% by weight, the above effect is insufficient, and if it exceeds 0.7% by weight, the viscosity of the produced glass is lowered and the bend resistance is lowered.

【0015】粘土は、成形時の密度を高めるために可塑
剤として添加される。SiC粉末に対する粘土の添加量
は0.01〜5重量%、好ましくは0.1〜4重量%と
する。0.01重量%未満では効果が不十分であり、5
重量%を超えるとAl23成分及び不純物が増えること
により、耐ベンド性が低下する。
Clay is added as a plasticizer to increase the density during molding. The amount of clay added to the SiC powder is 0.01 to 5% by weight, preferably 0.1 to 4% by weight. If the amount is less than 0.01% by weight, the effect is insufficient and 5
If it exceeds 5% by weight, the Al 2 O 3 component and impurities increase, and the bend resistance decreases.

【0016】また、本発明においては、上記粉末中に更
に5重量%以下の無定形SiO2を添加してもよい。無
定形SiO2を添加すると、焼成時にクリストバライト
に変化して結晶化に役立ち、窯道具の特性が向上する。
Further, in the present invention, 5% by weight or less of amorphous SiO 2 may be added to the above powder. When amorphous SiO 2 is added, it changes into cristobalite during firing, which helps crystallization and improves the characteristics of the kiln tool.

【0017】このような粉体を適量の水及び有機バイン
ダーとともに混練し、所望の形状に成形する。得られた
成形体を乾燥後、700〜1100℃の温度域を10時
間以上かけて昇温しながら焼成する。このように700
〜1100℃の温度域を10時間以上かけて、ゆっくり
昇温することにより、内部酸化が促される。なお、ここ
での昇温は、一定の昇温速度で行われる必要はなく、適
宜昇温速度を変化させたり、昇温の途中である温度に一
定時間キープする過程を設けるようにしてもよい。
Such a powder is kneaded together with an appropriate amount of water and an organic binder and molded into a desired shape. After drying the obtained molded body, it is fired while raising the temperature range of 700 to 1100 ° C. over 10 hours. Like this 700
Internal oxidation is promoted by slowly raising the temperature range of ˜1100 ° C. over 10 hours. It should be noted that the temperature raising here does not have to be performed at a constant temperature raising rate, and the temperature raising rate may be appropriately changed, or a process of keeping the temperature during heating for a certain period of time may be provided. .

【0018】本発明の製造方法では、上記の焼成に引き
続き、最高温度を1300〜1500℃の範囲に設定し
て更に焼成を行うが、この焼成においては1300℃以
上の温度域が2〜10時間になるようにする。したがっ
て、例えば、最高温度を1400℃に設定し、最高温度
までの昇温を50℃/hrの昇温速度で行うとすると、
最高温度までの昇温過程において1300〜1400℃
の温度域を2時間かけて昇温することになるので、その
後(最高温度到達後)の焼成時間は8時間以下にしなけ
ればならない。このような条件で焼成を行うことによ
り、表層部のSiC粒子の酸化量を制限することがで
き、表層部と中心部とのクリストバライト生成量の差を
小さく抑えることができる。
In the production method of the present invention, subsequent to the above firing, further firing is performed by setting the maximum temperature in the range of 1300 to 1500 ° C. In this firing, the temperature range of 1300 ° C. or higher is 2 to 10 hours. Try to be. Therefore, for example, if the maximum temperature is set to 1400 ° C. and the temperature is raised to the maximum temperature at a temperature increase rate of 50 ° C./hr,
1300 to 1400 ° C in the process of heating up to the maximum temperature
Since the temperature range of (2) is raised over 2 hours, the subsequent firing time (after reaching the maximum temperature) must be 8 hours or less. By firing under such conditions, the amount of oxidation of the SiC particles in the surface layer portion can be limited, and the difference in the cristobalite production amount between the surface layer portion and the central portion can be suppressed to be small.

【0019】なお、最高温度が1300℃未満では、表
層部のSiCの酸化が不十分となって、表面に強固なガ
ラス質被膜が生成しないので、耐酸化性が劣り、一方、
1500℃を超えると、表層部の酸化量が多くなりすぎ
て、中心部とのバランスが悪くなる。同様に、1300
℃以上の温度域が2時間未満では、表層部のSiCの酸
化が不十分で耐酸化性が劣り、10時間を超えると表層
部の酸化量が多くなりすぎて、中心部とのバランスが悪
くなる。
If the maximum temperature is less than 1300 ° C., the oxidation of the SiC in the surface layer portion will be insufficient and a strong glassy film will not be formed on the surface, resulting in poor oxidation resistance.
If it exceeds 1500 ° C., the amount of oxidation in the surface layer portion becomes too large and the balance with the center portion becomes poor. Similarly, 1300
If the temperature range of ℃ or more is less than 2 hours, the oxidation of SiC in the surface layer is insufficient and the oxidation resistance is inferior, and if it exceeds 10 hours, the amount of oxidation in the surface layer becomes too large and the balance with the center is poor. Become.

【0020】[0020]

【実施例】以下、本発明を実施例に基づいて更に詳細に
説明するが、本発明はこれらの実施例に限定されるもの
ではない。
The present invention will be described in more detail based on the following examples, but the invention is not intended to be limited to these examples.

【0021】最大粒径が表1及び表2に示す値であっ
て、窯道具に適した下記粒度配合比の範囲に入るように
粒度を調整したSiC粉末に対し、表1及び表2に示す
ように各種の添加剤を添加し、更に有機バインダーとし
てカルボキシメチルセルロースを0.03重量%、デキ
ストリンを0.05重量%、及び水を6重量%加え、ウ
エットパンにて混練した。
Tables 1 and 2 show the SiC powders whose maximum particle diameters are the values shown in Tables 1 and 2 and whose particle diameters are adjusted so as to fall within the range of the following particle size mixing ratio suitable for the kiln tool. As described above, various additives were added, 0.03% by weight of carboxymethylcellulose, 0.05% by weight of dextrin, and 6% by weight of water were added as an organic binder, and the mixture was kneaded in a wet pan.

【0022】粒度配合比 500μ以上 35〜50重量% 88〜500μ 20〜30重量% 88μ以下 30〜35重量%Particle size blending ratio 500μ or more 35 to 50% by weight 88-500μ 20-30% by weight 88μ or less 30-35% by weight

【0023】こうして得られた坏土を1日熟成した後、
エアーバイブレーターを取り付けた振動成形機にて、約
20秒間振動を与えて成形し、板状の成形体を得た。こ
の成形体を乾燥した後、表1及び表2に示した種々の焼
成条件(昇温条件、最高温度条件)で焼成して、400
mm×350mm×10mm寸法の試験体を得た。なお、表1
及び表2中にI〜Xで示した昇温条件とA〜Hで示した
最高温度条件の詳細は表3に示すとおりである。得られ
た各試験体について、以下に示す物性の測定及び評価を
行い、結果を表1及び表2に示した。
After aging the kneaded material thus obtained for one day,
A vibration molding machine equipped with an air vibrator was applied with vibration for about 20 seconds to carry out molding to obtain a plate-shaped molded body. After the molded body was dried, it was fired under various firing conditions (temperature rising condition, maximum temperature condition) shown in Table 1 and Table 2 to obtain 400
A test piece with dimensions of mm × 350 mm × 10 mm was obtained. In addition, Table 1
The details of the temperature raising conditions indicated by I to X and the maximum temperature conditions indicated by A to H in Table 2 are as shown in Table 3. The physical properties shown below were measured and evaluated for each of the obtained test pieces, and the results are shown in Tables 1 and 2.

【0024】[見掛気孔率、見掛比重、カサ比重]JI
S R 2205−74に準じて測定した。
[Apparent porosity, apparent specific gravity, bulk specific gravity] JI
It was measured according to S R 2205-74.

【0025】[抗折強度]条件的にはJIS R 221
3−78に準ずるが、常温抗折強度はオートグラフを使
用して測定し、熱間抗折強度は熱間抗折試験機を使用し
て1400℃にて測定を行った。サンプルには、試験体
から切り出した130mm×25mm×10mm寸法のものを
用い、スパン100mmで3点曲げ法により測定した。
[Bending strength] Conditionally according to JIS R 221
According to 3-78, normal temperature bending strength was measured using an autograph, and hot bending strength was measured using a hot bending tester at 1400 ° C. A sample having a size of 130 mm × 25 mm × 10 mm cut out from a test piece was used, and a span of 100 mm was measured by a three-point bending method.

【0026】[SiO2(クリストバライト)/SiC
比]試験体の表層部(表面から厚さ2mmまでの部分)と
中心部(肉厚中心の厚さ2mmの部分)を切り出して、別
個に粉砕し、得られたそれぞれの粉末をX線回折法で測
定した。CuKα線に対する2θ=21.9゜のピーク
をSiO2(クリストバライト)の基準ピークとし、2
θ=34.0゜のピークをSiCの基準ピークとして、
両者の基準ピークの高さを測定し、SiCの基準ピーク
の高さに対するSiO2(クリストバライト)の基準ピ
ークの高さの比を求めた。そして、表層部の上記比の値
に対する中心部の上記比の値の割合を求めた。
[SiO 2 (Cristobalite) / SiC
[Ratio] The surface layer portion (the portion from the surface to the thickness of 2 mm) and the central portion (the portion of the thickness center of the thickness of 2 mm) of the test body are cut out and crushed separately, and each of the obtained powders is subjected to X-ray diffraction. It was measured by the method. The peak at 2θ = 21.9 ° with respect to the CuKα ray is set as a reference peak of SiO 2 (cristobalite), and 2
Using the peak at θ = 34.0 ° as the SiC reference peak,
The heights of both reference peaks were measured, and the ratio of the height of the reference peak of SiO 2 (cristobalite) to the height of the reference peak of SiC was determined. Then, the ratio of the value of the ratio of the central portion to the value of the ratio of the surface layer portion was obtained.

【0027】[耐スポール性]試験体(400mm×35
0mm×10mm)の中央に、280mm×240mm×20mm
のAl23板を載せて、電気炉にて全体を設定温度まで
加熱した。設定温度に2.5時間保持した後、室温中に
引き出し、試験体にクラックが発生するか否かを調べ
た。設定温度は最初250℃として試験し、試験体にク
ラックが発生しなかった場合には設定温度を25℃づつ
上げていきながら、クラックが発生するまで試験を繰り
返し、クラックが発生したときの設定温度を破壊温度と
した。
[Spolling resistance] Specimen (400 mm × 35
0mm × 10mm) 280mm × 240mm × 20mm in the center
The Al 2 O 3 plate of 1 was placed and the whole was heated to a set temperature in an electric furnace. After holding at the set temperature for 2.5 hours, the sample was pulled out to room temperature and examined for cracks in the test body. The test was conducted at a preset temperature of 250 ° C. If no cracks occurred in the test piece, the set temperature was raised by 25 ° C and the test was repeated until cracks occurred. Was set as the destruction temperature.

【0028】[耐クリープ性]試験体から切り出した1
30mm×25mm×10mmのサンプルを、スパン100mm
で支持して中央部に150kg/cm2の荷重をかけ、この状
態のまま1350℃で100時間保持した後、サンプル
の曲がり量を測定した。
[Creep resistance] 1 cut out from a test piece
30mm × 25mm × 10mm sample, span 100mm
Then, a load of 150 kg / cm 2 was applied to the central part of the sample, and the sample was kept at 1350 ° C. for 100 hours in this state, and then the bending amount of the sample was measured.

【0029】[耐酸化性]試験体から切り出した130
mm×25mm×10mmのサンプルを、O2濃度60%の雰
囲気中に1150℃で200時間保持し、サンプルの重
量増加率を求めた。
[Oxidation resistance] 130 cut out from the test piece
The mm × 25 mm × 10 mm sample was held in an atmosphere having an O 2 concentration of 60% at 1150 ° C. for 200 hours, and the weight increase rate of the sample was determined.

【0030】[0030]

【表1】 [Table 1]

【0031】[0031]

【表2】 [Table 2]

【0032】[0032]

【表3】 [Table 3]

【0033】表1及び表2に示すとおり、本発明の製造
方法の条件を満たすようにして作製された試験体は、い
ずれも表層部のSiO2/SiC比(炭化珪素の回折ピ
ークの高さに対するクリストバライトの回折ピークの高
さの比)の値に対する中心部の同比の値の割合が20%
以上で、かつ常温における抗折強度が1400℃におけ
る抗折強度の±20%の範囲内にあるものであって、耐
スポール性、耐クリープ性及び耐酸化性が高度にバラン
スされ、窯道具として好ましいものであった。
As shown in Tables 1 and 2, all of the test bodies manufactured so as to satisfy the conditions of the manufacturing method of the present invention have a SiO 2 / SiC ratio (height of diffraction peak of silicon carbide) of the surface layer portion. The ratio of the ratio of the height of the diffraction peak of cristobalite to the value of) is 20%.
As described above, the bending strength at room temperature is within ± 20% of the bending strength at 1400 ° C, and the spall resistance, creep resistance and oxidation resistance are highly balanced, and as a kiln tool It was preferable.

【0034】[0034]

【発明の効果】以上説明したように、本発明によれば、
耐スポール性、耐酸化性、耐クリープ性等の窯道具とし
て求められる諸特性をバランスよく向上させた酸化物結
合SiC質の窯道具が得られる。
As described above, according to the present invention,
It is possible to obtain an oxide-bonded SiC quality kiln tool in which various characteristics required for a kiln tool such as spall resistance, oxidation resistance, and creep resistance are improved in a well-balanced manner.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI C04B 35/64 J (56)参考文献 特開 昭62−83371(JP,A) 特開 昭62−21762(JP,A) 特開 平5−262564(JP,A) (58)調査した分野(Int.Cl.7,DB名) F27D 3/12 C04B 33/32 C04B 35/565 C04B 35/64 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI C04B 35/64 J (56) References JP 62-83371 (JP, A) JP 62-21762 (JP, A) JP-A-5-262564 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) F27D 3/12 C04B 33/32 C04B 35/565 C04B 35/64

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 最大粒径が4mm以下であるSiC粉末に
対し、0.01〜0.7重量%のV25、0.01〜
0.7重量%のCaO及び0.01〜5重量%の粘土を
添加して得た粉体を成形し、これを焼成してなるSiC
質窯道具であって、 当該SiC質窯道具の表層部と中心部とをそれぞれX線
回折で粉末法により測定して、CuKα線に対する2θ
が34.0゜である炭化珪素の回折ピークの高さに対す
る、2θが21.9゜であるクリストバライトの回折ピ
ークの高さの比を求めたとき、表層部の上記比の値に対
する中心部の上記比の値の割合が20%以上であり、 常温における抗折強度が、1400℃における抗折強度
の±20%の範囲内にあることを特徴とするSiC質窯
道具。
1. A SiC powder having a maximum particle size of 4 mm or less, 0.01 to 0.7% by weight of V 2 O 5 , 0.01 to
SiC formed by adding 0.7% by weight of CaO and 0.01 to 5% by weight of clay to form a powder, and firing the powder.
A kiln tool, in which the surface layer portion and the central portion of the SiC kiln tool are respectively measured by X-ray diffraction by a powder method, and 2θ for CuKα ray
When the ratio of the height of the diffraction peak of cristobalite with 2θ of 21.9 ° to the height of the diffraction peak of silicon carbide with 34.0 ° is obtained, A ratio of the above-mentioned ratio value is 20% or more, and the bending strength at room temperature is within a range of ± 20% of the bending strength at 1400 ° C.
【請求項2】 最大粒径が4mm以下であるSiC粉末に
対し、0.01〜0.7重量%のV25、0.01〜
0.7重量%のCaO及び0.01〜5重量%の粘土を
添加して得た粉体を、適量の水及び有機バインダーとと
もに混練して、これを所望形状に成形し、得られた成形
体を乾燥後、700〜1100℃の温度域を10時間以
上かけて昇温しながら焼成し、更に最高温度が1300
〜1500℃の範囲にあり、かつ1300℃以上の温度
域が2〜10時間になるような条件で引き続き焼成を行
うことを特徴とするSiC質窯道具の製造方法。
2. A SiC powder having a maximum particle diameter of 4 mm or less, 0.01 to 0.7% by weight of V 2 O 5 , 0.01 to
Powder obtained by adding 0.7% by weight of CaO and 0.01 to 5% by weight of clay was kneaded together with an appropriate amount of water and an organic binder and molded into a desired shape. After the body is dried, it is baked while raising the temperature range of 700 to 1100 ° C. over 10 hours, and the maximum temperature is 1300.
The method for producing a SiC-based kiln tool is characterized in that the firing is continued under the condition that the temperature is in the range of -1500 ° C and the temperature range of 1300 ° C or higher is 2-10 hours.
JP32526794A 1994-12-27 1994-12-27 SiC-based kiln tool and method of manufacturing the same Expired - Lifetime JP3373312B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP32526794A JP3373312B2 (en) 1994-12-27 1994-12-27 SiC-based kiln tool and method of manufacturing the same
TW084102042A TW310316B (en) 1994-12-27 1995-03-03
KR1019950005228A KR100356736B1 (en) 1994-12-27 1995-03-14 Silicon carbide (SiC) quality urinary ware and its manufacturing method
CN95103594A CN1106565C (en) 1994-12-27 1995-03-27 Kiln furniture made of sic and the process for production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32526794A JP3373312B2 (en) 1994-12-27 1994-12-27 SiC-based kiln tool and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JPH08178548A JPH08178548A (en) 1996-07-12
JP3373312B2 true JP3373312B2 (en) 2003-02-04

Family

ID=18174906

Family Applications (1)

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Country Link
JP (1) JP3373312B2 (en)
KR (1) KR100356736B1 (en)
CN (1) CN1106565C (en)
TW (1) TW310316B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1728774A1 (en) 2005-06-01 2006-12-06 Ngk Insulators, Ltd. Oxide-bonded silicon carbide material

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5108311B2 (en) * 2007-01-19 2012-12-26 日本碍子株式会社 Oxide-bonded silicon carbide sintered body and manufacturing method thereof
EP2138474B1 (en) * 2008-06-23 2018-08-08 Imerys Kiln Furniture Hungary Ltd. Sic material
CN101654362B (en) * 2009-08-31 2013-01-23 成都蜀冶新材料有限责任公司 Silicon oxynitride combined carborundum high-temperature ceramic material and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1728774A1 (en) 2005-06-01 2006-12-06 Ngk Insulators, Ltd. Oxide-bonded silicon carbide material

Also Published As

Publication number Publication date
CN1125840A (en) 1996-07-03
KR100356736B1 (en) 2003-01-15
KR960022397A (en) 1996-07-18
CN1106565C (en) 2003-04-23
JPH08178548A (en) 1996-07-12
TW310316B (en) 1997-07-11

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