JPH0321516B2 - - Google Patents

Info

Publication number
JPH0321516B2
JPH0321516B2 JP19472682A JP19472682A JPH0321516B2 JP H0321516 B2 JPH0321516 B2 JP H0321516B2 JP 19472682 A JP19472682 A JP 19472682A JP 19472682 A JP19472682 A JP 19472682A JP H0321516 B2 JPH0321516 B2 JP H0321516B2
Authority
JP
Japan
Prior art keywords
substrate
crystal
growth
gases
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP19472682A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5988395A (ja
Inventor
Kazuhisa Takahashi
Kenji Ikeda
Jun Oosawa
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP19472682A priority Critical patent/JPS5988395A/ja
Publication of JPS5988395A publication Critical patent/JPS5988395A/ja
Publication of JPH0321516B2 publication Critical patent/JPH0321516B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP19472682A 1982-11-08 1982-11-08 化合物半導体結晶気相成長装置 Granted JPS5988395A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19472682A JPS5988395A (ja) 1982-11-08 1982-11-08 化合物半導体結晶気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19472682A JPS5988395A (ja) 1982-11-08 1982-11-08 化合物半導体結晶気相成長装置

Publications (2)

Publication Number Publication Date
JPS5988395A JPS5988395A (ja) 1984-05-22
JPH0321516B2 true JPH0321516B2 (enrdf_load_stackoverflow) 1991-03-22

Family

ID=16329216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19472682A Granted JPS5988395A (ja) 1982-11-08 1982-11-08 化合物半導体結晶気相成長装置

Country Status (1)

Country Link
JP (1) JPS5988395A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016898A (ja) * 1983-07-08 1985-01-28 Matsushita Electric Ind Co Ltd 気相成長装置
JPS6163599A (ja) * 1984-09-05 1986-04-01 Matsushita Electric Ind Co Ltd 気相成長装置
JPS6183700A (ja) * 1984-09-28 1986-04-28 Hitachi Ltd 気相エピタキシヤル成長方法およびその装置
JPS6251209A (ja) * 1985-08-30 1987-03-05 Hitachi Ltd 気相成長装置
JPS62291020A (ja) * 1986-06-10 1987-12-17 Matsushita Electric Ind Co Ltd 気相成長装置および気相成長方法
JPH0626187B2 (ja) * 1987-04-14 1994-04-06 三菱電機株式会社 半導体結晶の製造装置
JP2722833B2 (ja) * 1991-03-18 1998-03-09 富士通株式会社 気相エピタキシャル成長装置および気相エピタキシャル成長方法
JP5500953B2 (ja) * 2009-11-19 2014-05-21 株式会社ニューフレアテクノロジー 成膜装置および成膜方法

Also Published As

Publication number Publication date
JPS5988395A (ja) 1984-05-22

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