JPH0321087B2 - - Google Patents
Info
- Publication number
- JPH0321087B2 JPH0321087B2 JP60062524A JP6252485A JPH0321087B2 JP H0321087 B2 JPH0321087 B2 JP H0321087B2 JP 60062524 A JP60062524 A JP 60062524A JP 6252485 A JP6252485 A JP 6252485A JP H0321087 B2 JPH0321087 B2 JP H0321087B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- light
- gas
- discharge
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6252485A JPS61220415A (ja) | 1985-03-27 | 1985-03-27 | 薄膜製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6252485A JPS61220415A (ja) | 1985-03-27 | 1985-03-27 | 薄膜製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61220415A JPS61220415A (ja) | 1986-09-30 |
JPH0321087B2 true JPH0321087B2 (enrdf_load_stackoverflow) | 1991-03-20 |
Family
ID=13202657
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6252485A Granted JPS61220415A (ja) | 1985-03-27 | 1985-03-27 | 薄膜製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61220415A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02156075A (ja) * | 1988-12-09 | 1990-06-15 | Mitsubishi Metal Corp | 超電導体薄膜の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57160119A (en) * | 1981-03-28 | 1982-10-02 | Mitsugi Hanabusa | Manufacture of amorphous silicon film by reactive laser sputtering |
JPS58165330A (ja) * | 1982-03-25 | 1983-09-30 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPS6122618A (ja) * | 1984-07-10 | 1986-01-31 | Mitsubishi Electric Corp | 気相エピタキシヤル結晶成長装置 |
-
1985
- 1985-03-27 JP JP6252485A patent/JPS61220415A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61220415A (ja) | 1986-09-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |