JPH03209793A - Solder connecting structure for glass board - Google Patents

Solder connecting structure for glass board

Info

Publication number
JPH03209793A
JPH03209793A JP2143290A JP2143290A JPH03209793A JP H03209793 A JPH03209793 A JP H03209793A JP 2143290 A JP2143290 A JP 2143290A JP 2143290 A JP2143290 A JP 2143290A JP H03209793 A JPH03209793 A JP H03209793A
Authority
JP
Japan
Prior art keywords
thin film
electrode
film electrode
bonding surface
glass substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2143290A
Other languages
Japanese (ja)
Inventor
Kazuhide Makita
蒔田 和秀
Hiroshi Niimi
浩 新美
Junichi Hasegawa
淳一 長谷川
Keiji Hannou
阪納 啓司
Yoshimasa Sano
義政 佐野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Publication of JPH03209793A publication Critical patent/JPH03209793A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/36Assembling printed circuits with other printed circuits
    • H05K3/361Assembling flexible printed circuits with other printed circuits
    • H05K3/363Assembling flexible printed circuits with other printed circuits by soldering

Abstract

PURPOSE:To effectively prevent a crack due to concentration of a thermal stress at a part of a glass board by disposing a bonding surface edge of a solder layer to a thin film electrode inward at a predetermined distance from the bonding surface edge of the electrode to the board. CONSTITUTION:A thin film electrode 2 is formed on a glass board 1, and a flexible printed circuit board 4 is disposed at the upper position from its left side. The electrode 2 is formed by plating an Ni film on an Al film formed directly on the board 1, and the board 1 is formed with a thin film electrode 42 of a copper foil on the lower surface of a flexible resin film 41. A solder layer 3 is formed between the ends of the electrodes 2 and 42 and connected therebetween. The layer 3 has a width smaller than that of the electrode 2, and the bonding surface edge 3a of the film 2 is disposed inward by a predetermined distance l from the bonding surface edge 2a of the board 1 to the electrode 2.

Description

【発明の詳細な説明】 [産業上の利用分野コ 本発明はガラス基板の半田接続構造に関し、特に接続部
におけるガラス基板の熱応力割れを効果的に防止する半
田接続構造に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a solder connection structure for glass substrates, and more particularly to a solder connection structure that effectively prevents thermal stress cracking of a glass substrate at a connection portion.

[従来の技術] 従来、表示装置において、ガラス基板に通電用の金属薄
膜電極を形成し、該薄膜電極に表示制御装置より至るフ
レキシブルプリント配線板を半田接続することが一般的
に知られている。これを第8図および第9図で説明する
と、ガラス基板1の端部板面には平行帯状に複数の薄膜
電極2が形成され、一方、フレキシブルプリント配線板
4を構成する樹脂膜41の下面には上記薄膜電極2と同
幅同ピツチで薄膜電極42が形成されて、これら薄膜電
極2.42の端部間に同幅の半田層3を介在せしめて両
者を接合している。
[Prior Art] Conventionally, in a display device, it is generally known that a metal thin film electrode for conducting electricity is formed on a glass substrate, and a flexible printed wiring board connected to a display control device is connected to the thin film electrode by soldering. . To explain this with reference to FIGS. 8 and 9, a plurality of thin film electrodes 2 are formed in parallel strips on the end plate surface of the glass substrate 1, while a lower surface of a resin film 41 constituting the flexible printed wiring board 4 is formed. Thin film electrodes 42 are formed with the same width and pitch as the thin film electrodes 2, and a solder layer 3 of the same width is interposed between the ends of these thin film electrodes 2 and 42 to join them together.

[発明が解決しようとする課題] 上記接続構造において、ガラス基板1は熱膨張率が極め
て小さい上に、薄膜電極2を構成するアルミニウム(A
9)膜21およびニッケル(Ni)膜22とは熱膨張率
が異なり、これらは更に、半田層3とは熱膨張率が異な
るなめに、雰囲気温度の急変により各接合面の端縁に熱
応力が生じ、これら熱応力が全てガラス基板1と薄膜電
極2の接合面端縁2aに集中してガラス基板1にクラッ
クを生じることが往々にしてあった。
[Problems to be Solved by the Invention] In the above connection structure, the glass substrate 1 has an extremely small coefficient of thermal expansion and is made of aluminum (A), which constitutes the thin film electrode 2.
9) Since the film 21 and the nickel (Ni) film 22 have different coefficients of thermal expansion and also have different coefficients of thermal expansion from the solder layer 3, sudden changes in ambient temperature can cause thermal stress at the edges of each joint surface. All of these thermal stresses are concentrated on the edge 2a of the bonding surface between the glass substrate 1 and the thin film electrode 2, often causing cracks in the glass substrate 1.

本発明はかかる課題を解決するもので、ガラス基板の一
部に熱応力が集中してクラックを生じるのを有効に防止
する、半田接続構造を提供することを目的とする。
The present invention solves this problem, and aims to provide a solder connection structure that effectively prevents the occurrence of cracks due to concentration of thermal stress on a portion of a glass substrate.

[課題を解決するための手段] 本発明の詳細な説明すると、ガラス基板1(第1図、第
2図)上に形成した薄膜電極2上に半田層3により部品
4を接続する接続構造において、上記半田層3の、上記
薄膜電極2との接合面端縁3aを、薄膜電極2とガラス
基板1の接合面端縁2aよりも一定距離g以上内方に位
置せしめたものである。
[Means for Solving the Problems] The present invention will be described in detail in a connection structure in which a component 4 is connected by a solder layer 3 to a thin film electrode 2 formed on a glass substrate 1 (FIGS. 1 and 2). , the edge 3a of the bonding surface of the solder layer 3 with the thin film electrode 2 is located a certain distance g or more inward from the edge 2a of the bonding surface between the thin film electrode 2 and the glass substrate 1.

し作用] 上記構造において、雰囲気温度が急変すると、ガラス基
板1と薄膜電極2の接合面端縁2a、および半田層3と
薄膜電極2の接合面端縁3aにはそれぞれ熱応力が生じ
る。ここにおいて、上記端縁3aを端縁2aよりも一定
距離ρ以上内方に位置せしめて離隔したことにより、ガ
ラス基板に及ぶ熱応力は分散されて一部に集中すること
はない。
In the above structure, when the ambient temperature suddenly changes, thermal stress is generated at the edge 2a of the bonding surface between the glass substrate 1 and the thin film electrode 2, and at the edge 3a of the bonding surface between the solder layer 3 and the thin film electrode 2, respectively. Here, by positioning and separating the edge 3a further inward than the edge 2a by a certain distance ρ or more, the thermal stress exerted on the glass substrate is dispersed and is not concentrated in one part.

これにより、ガラス基板1のクラック発生は有効に防止
される。
Thereby, generation of cracks in the glass substrate 1 is effectively prevented.

[第1実施例] 第1図は接続構造の横断面であり、第2図は縦断面であ
る。螢光表示装置において、ガラス基板1上には第2図
の左方より薄膜電極2が形成されて至り、一方、その上
方位置には右方よりフレキシブルプリント配線板4が至
っている。上記薄膜電極2はガラス基板1に直接形成さ
れなAg膜の上にN1Jliをメツキ形成して構成され
、プリント配線板4は可撓性のある樹脂膜41の下面に
銅(Cu)箔の薄膜電極42を形成したものである。
[First Example] FIG. 1 is a cross section of a connection structure, and FIG. 2 is a longitudinal section. In the fluorescent display device, a thin film electrode 2 is formed on a glass substrate 1 from the left side in FIG. 2, and a flexible printed wiring board 4 is formed above it from the right side. The thin film electrode 2 is formed by plating N1Jli on an Ag film that is directly formed on the glass substrate 1, and the printed wiring board 4 is made of a thin film of copper (Cu) foil on the lower surface of a flexible resin film 41. An electrode 42 is formed thereon.

そして、対向するこれら薄膜電極2.42の端部間に半
田層3が形成されてこれらを接続している。
A solder layer 3 is formed between the opposing ends of these thin film electrodes 2.42 to connect them.

この半田層3は、ペースト半田を薄膜電極2の所定位置
に塗布した後、上記プリント配線板4端部を重ねて上方
よりレーザ光を照射し、溶融して形成される。
This solder layer 3 is formed by applying a paste solder to a predetermined position of the thin film electrode 2, and then overlapping the ends of the printed wiring board 4 and irradiating laser light from above to melt it.

このように形成された半田層3は、その幅を薄膜電極2
の幅よりも小さくしてあり(第1図)、薄膜電極2との
接合面端縁3aが、薄膜電極2とガラス基板1の接合面
端縁2aよりも一定距離1だけ内方に位置している。な
お、プリント配線板4の幅は半田層3と同一としである
The width of the solder layer 3 formed in this way is the same as that of the thin film electrode 2.
(Fig. 1), and the edge 3a of the bonding surface with the thin film electrode 2 is located a certain distance 1 inward from the edge 2a of the bonding surface between the thin film electrode 2 and the glass substrate 1. ing. Note that the width of the printed wiring board 4 is the same as that of the solder layer 3.

また、上記薄膜電極2の端部位置においてもく第2図)
、半田F!3と薄膜電極2の接合面端縁3aは、薄膜電
極2とガラス基板1の接合面端縁2aよりも一定距離1
だけ内方に位置している。
Also, at the end position of the thin film electrode 2 (Fig. 2)
, Handa F! The edge 3a of the bonding surface between the thin film electrode 2 and the glass substrate 1 is a certain distance 1 from the edge 2a of the bonding surface between the thin film electrode 2 and the glass substrate 1.
only located inward.

発明者等の実験によれば、上記一定距離gは少なくとも
0.05rm以上を確保する必要があり、例えば薄膜電
極2の幅を1閣とし、半田層3の幅を0.9mmとして
、両側に0,05nwnの距離ρをとった場合、ガラス
基板1に生じる最大熱応力は従来に比して40%程度も
低下する。また、冷熱衝撃テストにおいても、従来構造
では500サイクルでガラス基板1にクラックが発生す
るに対して、実施例の構造では1000サイクルでもク
ラックの発生は認められなかった。なお、実験に使用し
た薄膜電極は各1μm厚のAI膜およびNi膜で構成し
た。
According to experiments conducted by the inventors, it is necessary to ensure that the above-mentioned constant distance g is at least 0.05 rm. When the distance ρ is 0.05 nwn, the maximum thermal stress generated in the glass substrate 1 is reduced by about 40% compared to the conventional case. Further, in a thermal shock test, cracks occurred in the glass substrate 1 after 500 cycles in the conventional structure, but no cracks were observed in the structure of the example even after 1000 cycles. The thin film electrodes used in the experiment were composed of an AI film and a Ni film each having a thickness of 1 μm.

[第2実施例] 第3図に示す如く、薄膜電極2を構成するA、Q膜21
およびNi膜22の端部を階段状に形成して、各121
.22の端縁位置をずらすことにより、さらに良好に熱
応力の分散がなされる。なお、上記Ni膜21の上にさ
らに金(Au>膜を形成する等、薄膜電極2を三層以上
となし、これら膜の端部を階段状に形成すれば、さらに
熱応力の分散を図ることができる。
[Second Example] As shown in FIG. 3, A and Q films 21 constituting the thin film electrode 2
The ends of the Ni film 22 are formed in a step-like manner so that each 121
.. By shifting the edge position of 22, thermal stress can be distributed even better. In addition, if the thin film electrode 2 is made up of three or more layers, such as by further forming a gold (Au> film) on the Ni film 21, and the edges of these films are formed in a stepped shape, thermal stress can be further dispersed. be able to.

[第3実施例コ 第4図に示す薄膜電極2は、All膜21の上に銀(A
g)膜23を形成して構成してあり、このAg膜23は
ペーストを塗布して焼成したもので、その端部は階段的
にずれた位置より、なだらかな斜面としである。かかる
構造によっても、さらに熱応力の分散が図られる。
[Third Embodiment] The thin film electrode 2 shown in FIG.
g) It is constructed by forming a film 23, and this Ag film 23 is made by applying a paste and firing it, and its edges are sloped gently from the stepped positions. Such a structure also allows for further dispersion of thermal stress.

[第4実施例] 第5図に示す薄膜電極2は、50〜100μm厚のAg
単一膜で構成され、ペースト成形時に端部を傾斜面とし
て熱応力を分散せしめている。
[Fourth Example] The thin film electrode 2 shown in FIG.
It is composed of a single film, and its edges are sloped to disperse thermal stress during paste molding.

[第5実施例] 第6図においては、半田層3の下半部を接合面端縁3a
に向けて傾斜面としである。かかる構造によっても上記
各実施例と同様の効果がある。
[Fifth Embodiment] In FIG. 6, the lower half of the solder layer 3 is connected to the joint surface edge 3a.
It is a sloped surface facing towards the direction. Such a structure also provides the same effects as those of the above embodiments.

なお、上記第1実施例ないし第5実施例に示した接続構
造は、例えば第7図に示す如く、ICパッケージ5から
延出するリード電極51との接続や、その他、各種部品
との接続に適用することができる。
Note that the connection structures shown in the first to fifth embodiments are suitable for connection with the lead electrode 51 extending from the IC package 5 and connection with various other parts, for example, as shown in FIG. Can be applied.

[第6実施例] ところで、本発明の適用に当たっては、既述の如く薄膜
電極2と半田層3の接合面端縁3aを、薄膜電極2とガ
ラス基板1の端縁2aよりも0゜05mm以上の距離1
だけ内方へ位置せしめる必要があるが、薄膜電極の幅が
小さくなると上記距離1を確保しつつ半田付は作業する
ことが困難である。
[Sixth Embodiment] By the way, in applying the present invention, as described above, the edge 3a of the joint surface between the thin film electrode 2 and the solder layer 3 is set 0°05 mm away from the edge 2a of the thin film electrode 2 and the glass substrate 1. Distance greater than 1
However, if the width of the thin film electrode becomes small, it is difficult to perform soldering while ensuring the above distance 1.

かかる困難を防止する構造を第8図および第9図に示す
。図において、ガラス基板1上には、薄膜電極2を覆い
、半田層3の下端に接してエポキシ樹脂等よりなるソル
ダマスク層6が形成しである。すなわち、ソルダマスク
層6は第10図に示す如く、ガラス基板1と薄膜電極2
の大部分を覆って形成され、薄膜電極2の端部ではその
端縁より上記距離pだけ小さい長方形領域24を除いて
あって、この領域24でのみ薄膜電極2が露出している
Structures that prevent such difficulties are shown in FIGS. 8 and 9. In the figure, a solder mask layer 6 made of epoxy resin or the like is formed on a glass substrate 1 to cover a thin film electrode 2 and to be in contact with the lower end of a solder layer 3. That is, the solder mask layer 6 is formed between the glass substrate 1 and the thin film electrode 2, as shown in FIG.
At the end of the thin film electrode 2, a rectangular region 24 which is smaller than the edge by the distance p is excluded, and the thin film electrode 2 is exposed only in this region 24.

しかして、ペースト半田を塗布すると、上記長方形領域
24でのみ半田が薄膜電極2に接し、この部分でのみ薄
膜電極2と溶着される。このようにして、容易に半田付
は作業することができる。
When the solder paste is applied, the solder comes into contact with the thin film electrode 2 only in the rectangular area 24, and is welded to the thin film electrode 2 only in this area. In this way, soldering can be easily performed.

なお、上記ソルダマスク層6を十分厚く形成し、あるい
はS i 02ないしガラスの如く、より剛性の大きい
材料でソルダマスク層6を形成すれば、薄膜電極2とガ
ラス基板1の接合面端縁の応力集中をさらに分散緩和せ
しめることができる。
Note that if the solder mask layer 6 is formed sufficiently thick or made of a material with greater rigidity such as S i 02 or glass, stress concentration at the edge of the bonding surface between the thin film electrode 2 and the glass substrate 1 can be reduced. The dispersion can be further relaxed.

本実施例の接続構造は、例えば第11図に示す如く、I
Cパッケージ5から延出するリード電極51と薄膜電極
2の接続にも適用できる他、各種部品との接続に適用す
ることができる。
The connection structure of this embodiment is, for example, as shown in FIG.
It can be applied not only to the connection between the lead electrode 51 extending from the C package 5 and the thin film electrode 2, but also to the connection with various parts.

[発明の効果] 以上の如く、本発明の接続構造は、ガラス基板上に各種
部品を半田接続する構造において、雰囲気温度の変化に
よるガラス基板上への熱応力集中を効果的に分散せしめ
て、ガラス基板のクラック発生を回避できるものである
[Effects of the Invention] As described above, the connection structure of the present invention effectively disperses thermal stress concentration on the glass substrate due to changes in ambient temperature in a structure in which various components are soldered onto a glass substrate. This makes it possible to avoid cracks in the glass substrate.

【図面の簡単な説明】[Brief explanation of drawings]

第1図および第2図は本発明の第1実施例を示し、第1
図は接続構造の横断面図、第2図は接続構造の縦断面図
、第3図ないし第6図はそれぞれ本発明の第2ないし第
5実施例を示す接続構造の横断面図、第7図本発明の他
の適用例を示す部分断面側面図、第8図ないし第11図
は本発明の第6実施例を示し、第8図は接続構造の横断
面図で、断面部は第10図の■−■線に沿うもの、第9
図は接続構造の縦断面図、第10図はソルダマスク層を
形成した基板端部の斜視図、第11図は本発明のさらに
他の適用例を示す部分断面側面図、第12図および第1
3図は従来例を示し、第12図は接続構造の斜視図、第
13図は接続構造の横断面図で、第12図のxm−xm
線断面図である。 1・・・ガラス基板 2・・・薄膜電極 2a・・・接合面端縁 3・・・半田層 3a・・・接合面端縁 4・・・フレキシブルプリント基板 5・・・ICパッケージ(部品) 6・・・ソルダマスク (部品) 3a 2a 第10図
1 and 2 show a first embodiment of the present invention;
2 is a longitudinal sectional view of the connection structure, FIGS. 3 to 6 are cross sectional views of the connection structure showing second to fifth embodiments of the present invention, respectively. 8 to 11 show a sixth embodiment of the present invention, and FIG. 8 is a cross-sectional view of the connection structure, and the cross-sectional part is the 10th embodiment. Items along the ■-■ line in the diagram, No. 9
10 is a perspective view of the end of a substrate on which a solder mask layer is formed, FIG. 11 is a partially sectional side view showing still another application example of the present invention, FIG. 12 and FIG.
Figure 3 shows a conventional example, Figure 12 is a perspective view of the connection structure, Figure 13 is a cross-sectional view of the connection structure, and xm-xm in Figure 12.
FIG. 1... Glass substrate 2... Thin film electrode 2a... Bonding surface edge 3... Solder layer 3a... Bonding surface edge 4... Flexible printed circuit board 5... IC package (component) 6...Solder mask (parts) 3a 2a Fig. 10

Claims (1)

【特許請求の範囲】[Claims] ガラス基板上に形成した薄膜電極上に半田層により部品
を接続する接続構造において、上記半田層の、上記薄膜
電極との接合面端縁を、薄膜電極とガラス基板との接合
面端縁よりも一定距離以上内方に位置せしめたことを特
徴とするガラス基板の半田接続構造。
In a connection structure in which components are connected by a solder layer on a thin film electrode formed on a glass substrate, the edge of the bonding surface of the solder layer with the thin film electrode is set to be lower than the edge of the bonding surface between the thin film electrode and the glass substrate. A solder connection structure for glass substrates characterized by being positioned inward by a certain distance or more.
JP2143290A 1989-10-18 1990-01-31 Solder connecting structure for glass board Pending JPH03209793A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1-271310 1989-10-18
JP27131089 1989-10-18

Publications (1)

Publication Number Publication Date
JPH03209793A true JPH03209793A (en) 1991-09-12

Family

ID=17498268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2143290A Pending JPH03209793A (en) 1989-10-18 1990-01-31 Solder connecting structure for glass board

Country Status (1)

Country Link
JP (1) JPH03209793A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7110241B2 (en) 2004-03-22 2006-09-19 Mitsubishi Denki Kabushiki Kaisha Substrate
WO2012150452A1 (en) * 2011-05-03 2012-11-08 Pilkington Group Limited Glazing with a soldered connector
US9975207B2 (en) 2011-02-04 2018-05-22 Antaya Technologies Corporation Lead-free solder composition
WO2022172785A1 (en) * 2021-02-09 2022-08-18 セントラル硝子株式会社 Solder bonded structure, windowpane for vehicles, method for producing solder bonded structure, method for producing glass article, and glass article

Citations (2)

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US7110241B2 (en) 2004-03-22 2006-09-19 Mitsubishi Denki Kabushiki Kaisha Substrate
US9975207B2 (en) 2011-02-04 2018-05-22 Antaya Technologies Corporation Lead-free solder composition
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US9595768B2 (en) 2011-05-03 2017-03-14 Pilkington Group Limited Glazing with a soldered connector
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