JPH11135567A - Anisotropic conductive film and manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain stable electrical connection by positively joining the elec trode of semiconductor parts to an electrode being formed on a substrate. SOLUTION: A double structure of a first adhesive layer 51 including a conductive particle 53 and a second adhesive layer 52 without including the conductive particle 53 is provided, insulation in upper and lower directions can be maintained while a semiconductor device is merely placed, and electrical connection in upper and lower directions can be obtained by pressing using a projecting part.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a method for manufacturing a semiconductor device obtained by mounting a semiconductor component, particularly a bare IC chip on a substrate (printed circuit board), and to an anisotropic conductive film used in the method. It is.

[0002]

2. Description of the Related Art In recent years, when a semiconductor device is constructed,
There are many demands for a smaller and thinner mounting area, and a flip-chip mounting method in which a bare IC chip is directly mounted on a substrate without packaging is known as a method for meeting this demand. This mounting method will be described with reference to FIG.

[0003] A plurality of wiring patterns 12 are formed of a conductive material on a component mounting surface 11 of a substrate 10 on which a bare IC chip 30 as a semiconductor component is mounted. Applied electrode 1
3 are formed. Each wiring pattern 12 is covered with a solder resist 14 except for a part of the electrode 13 and is insulated.

In the bare IC chip 30, a plurality of electrodes 32 made of a conductive material such as Al (aluminum) are arranged on a predetermined surface 31 so as to correspond to the electrodes 13 of the substrate 10. Are formed with bumps 33 respectively. The bump 33 is made of Au (gold) or Sn-Pb (tin-lead)
It is made of a metal material such as an alloy.

[0005] Anisotropic conductive film 20 used for mounting bare IC chip 30 is made of insulating resin 21 and conductive particles 22.
Before use, the anisotropic conductive film 20 is covered on one side with a protective tape.

When mounting the bare IC chip 30, the anisotropic conductive film 20 is placed on the component mounting surface 11 of the substrate 10 with one of the exposed surfaces of the anisotropic conductive film 20 facing the substrate 10. The isotropic conductive film 20 is pressurized and heated from the protective tape side to perform temporary bonding. In this case, the anisotropic conductive film 20 is bonded to the mounting location of the bare IC chip 30 so as to cover the wiring pattern 12 and the electrode 13 of the substrate 10. At this time, the area of the anisotropic conductive film 20 is determined in consideration of the displacement of the anisotropic conductive film 20 with respect to the substrate 10 or the like.
Is approximately twice as large as the area of the predetermined surface 31.

Next, the protective tape of the anisotropic conductive film 20 adhered to the substrate 10 is peeled off, and the predetermined surface 31 of the bare IC chip 30 is set so as to face the other surface of the anisotropic conductive film 20. Then, the bare IC chip 30 is placed on the anisotropic conductive film 20, and the anisotropic conductive film 20 is pressurized and heated to perform the actual bonding of the bare IC chip 30. Thus, the component mounting surface 11 of the substrate 10 and the predetermined surface 31 side of the bare IC chip 30 are joined via the insulating resin 21 of the anisotropic conductive film 20. Further, since the conductive particles 22 of the anisotropic conductive film 20 are pressed by the bumps 33 against the electrodes 13 of the substrate 10, the substrate 10 and the bare IC chip 30 are electrically connected.

[0008]

In this conventional mounting method, the substrate 10 is a hard substrate made of glass epoxy, and when the substrate 10 is warped, the anisotropic conductive film 20 is formed on the component mounting surface 11 of the substrate 10. After the temporary bonding, the bare IC chip 30 is placed on the anisotropic conductive film 20 and the main bonding is performed.
There is a problem that a gap is generated between the electrode 13 formed at 0 and the bump 33 formed corresponding to the electrode 32 of the bare IC chip 30, and electrical connection cannot be obtained.

The anisotropic conductive film 20 is made of an insulating resin 21.
Since the conductive particles 22 are uniformly mixed in a one-layer structure, and the distance between the electrodes 13 of the substrate 10 in the flip-chip mounting is as narrow as about 200 μm, the conductive particles 2
2 are scattered at intervals between the electrodes 13, and there is a problem that it is difficult to maintain circuit insulation.

Furthermore, since the anisotropic conductive film 20 has a one-layer structure in which conductive particles 22 are uniformly mixed in an insulating resin, each bump 33 of the bare IC chip 30 and the corresponding substrate 10 A sufficient number of conductive particles 2 between each electrode 13
In order to interpose 2, the thickness of the anisotropic conductive film 20 needs to be increased. When the thickness of the anisotropic conductive film 20 is increased for such a reason, when the bare IC chip 30 is placed on the anisotropic conductive film 20 and the actual bonding is performed by the bonding tool 40, the difference caused by the heating is eliminated. The surplus portion of the insulating resin 21 of the isotropic conductive film 20 adheres to the bonding tool 40,
To contaminate. Therefore, it is necessary to remove the insulating resin 21 attached to the bonding tool 40, and there is a disadvantage that the operation must be interrupted. In addition, when the thickness of the anisotropic conductive film 20 is increased, the number of opaque conductive particles 22 increases, and the transparency decreases. As a result, after the anisotropic conductive film 20 is temporarily bonded to the component mounting surface 11 of the
In the step of fully bonding the chip 30, it is difficult to recognize the electrode 13 of the substrate 10 from the top of the anisotropic conductive film 20 for alignment, thereby lowering the positional accuracy of the bonding and deteriorating the quality. There was a problem.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems in the prior art, and an object of the present invention is to make it possible to reliably join an electrode of a semiconductor component to an electrode formed on a substrate, and to realize a stable electrical connection. An object of the present invention is to provide a method for manufacturing a semiconductor device capable of obtaining a connection. Also, for other purposes,
An object of the present invention is to provide a method for manufacturing a semiconductor device and an anisotropic conductive film used therefor, which can eliminate unnecessary connection between electrodes and can further improve workability.

[0012]

Means for Solving the Problems The anisotropic conductive film of the present invention has a multilayer structure of an adhesive layer containing conductive particles and an adhesive layer containing no conductive particles. With this multi-layer structure, in the state of being simply placed, the insulation in the vertical direction is maintained, and the electrical connection in the vertical direction can be obtained by pressing the protruding portion.

The anisotropic conductive film according to the present invention has a two-layer structure of a first adhesive layer containing conductive particles and a second adhesive layer containing no conductive particles. The anisotropic conductive film according to claim 3 of the present invention includes a first adhesive layer containing conductive particles, a second adhesive layer containing no conductive particles, and a third adhesive layer containing no conductive particles. Having a three-layer structure of an adhesive layer and
The first adhesive layer is sandwiched between the second adhesive layer and the third adhesive layer. Thereby, the thickness of the first adhesive layer including the conductive particles is appropriately changed without changing the overall thickness, and when the first adhesive layer is simply placed, the insulation in the vertical direction is maintained, and the pressure is applied to the protruding portion. By doing so, a structure for obtaining electrical connection in the vertical direction can be obtained.

According to a fourth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, wherein a flexible substrate having an electrode connected to an electrode of a semiconductor component is used. A conductive conductive film is placed so as to cover the electrode of the flexible substrate and thermocompression-bonded, and the thermocompression bonding is performed with the electrode surface of the semiconductor facing the thermocompression-bonded anisotropic conductive film. Thus, the semiconductor device is manufactured by obtaining electrical connection between the electrode of the semiconductor component and the electrode of the flexible substrate. Thus, even if the substrate is warped, it is bent at the time of pressurization, and the semiconductor component is joined to the electrode of the flexible substrate, so that reliable electrical connection can be obtained.

According to a fifth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the step of forming a bump on an electrode of a semiconductor component, wherein an electrical connection between the electrode of the semiconductor component and the electrode of a flexible substrate is provided. A characteristic connection is obtained through the bump. Thereby, the semiconductor component on which the bumps are formed can be obtained, and the electrodes of the semiconductor component can be electrically connected to the electrodes of the flexible substrate.

A semiconductor manufacturing method according to a sixth aspect of the present invention uses an anisotropic conductive film having a multilayer structure of an adhesive layer containing conductive particles and an adhesive layer not containing conductive particles. And With this, when simply placed on the anisotropic conductive film having a multilayer structure, vertical insulation is maintained,
By pressing the protruding portion, electrical connection in the vertical direction can be obtained, and a necessary connection state is realized.

The anisotropic conductive film used in the method of manufacturing a semiconductor device according to claim 7 of the present invention has two layers: an adhesive layer containing no conductive particles and an adhesive layer containing conductive particles. It has a structure or a three-layer structure. This allows
Without changing the overall thickness, a two-layer or three-layer structure is used, and the thickness of the first adhesive layer containing the conductive particles is appropriately changed. By pressing the protruding portion, a structure for obtaining an electrical connection in the vertical direction can be obtained.

According to the method of manufacturing a semiconductor device of the present invention, at least one of a semiconductor package and a chip component is mounted on the flexible substrate before the semiconductor component mounting process. It is characterized by having been done.
As a result, the semiconductor package or chip component is mounted first, and the semiconductor component mounted on the substrate does not peel off during subsequent mounting.

A method of manufacturing a semiconductor device according to a ninth aspect of the present invention is characterized in that a step of forming a printed resistor on a flexible substrate is performed before the step of mounting a semiconductor component. I do. Thus, when forming the multi-chip module, it is not necessary to newly mount the resistive chip component on the flexible substrate, and the semiconductor component mounted on the substrate does not peel off by subsequent mounting.

A method of manufacturing a semiconductor device according to a tenth aspect of the present invention is characterized in that a hard substrate is detachably fixed to a back surface of a flexible substrate. With this, when the semiconductor component is press-bonded to the flexible substrate under heating with the anisotropic conductive film interposed, the flexible substrate is transported and fixed to a heater stage of an automatic press-bonding machine. This is easy, and the fixing position can be accurately determined.

According to a semiconductor device manufacturing method of the present invention, the semiconductor component is a bare IC chip. Thereby, the bare IC chip can be appropriately mounted on the substrate.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for manufacturing a semiconductor device according to an embodiment of the present invention and an anisotropic conductive film used therefor will be described below with reference to the accompanying drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant description will be omitted. The anisotropic conductive film of the present invention has a multilayer structure of an adhesive layer containing conductive particles and an adhesive layer not containing conductive particles, as shown in FIG. 1 or FIG.

FIG. 1 shows an anisotropic conductive film 50 according to a first embodiment of the present invention. This anisotropic conductive film 50 is made of a first adhesive layer 5 containing conductive particles 53 in an insulating resin 54.
1 and a second resin made of an insulating resin not containing the conductive particles 53.
Has a two-layer structure with the adhesive layer 52 of FIG. A releasable protective tape 55 is adhered to a surface of the first adhesive layer 51 that is not in contact with the second adhesive layer 52. The thickness obtained by adding the thickness of the first adhesive layer 51 and the thickness of the second adhesive layer 52 is equal to the thickness of the conventional anisotropic conductive film 20 (for example, 40 to 40).
50 microns), and the ratio of the thickness of the first adhesive layer 51 to the thickness of the second adhesive layer 52 is about 1: 1.
The density of the conductive particles 53 contained in the insulating resin 54 is equal to the density of the conventional anisotropic conductive film 20.

FIG. 2 shows an anisotropic conductive film 50A according to a second embodiment of the present invention. This anisotropic conductive film 50A
Are a first adhesive layer 56 containing conductive particles 53 in an insulating resin 54, a second adhesive layer 57 made of an insulating resin not containing the conductive particles 53, and an insulating layer containing no conductive particles 53. It has a three-layer structure with a third adhesive layer 58 made of a conductive resin. Then, the first adhesive layer 56 is
Between the third adhesive layer 58 and the third adhesive layer 58. A releasable protective tape 55 is adhered to a surface of the second adhesive layer 57 that is not in contact with the first adhesive layer 56. The thickness obtained by adding the thickness of the first adhesive layer 56, the thickness of the second adhesive layer 57, and the thickness of the third adhesive layer 58 is equal to the thickness of the conventional anisotropic conductive film 20 (for example, 40 ~
50 μm), and the ratio of the thickness of the first adhesive layer 56, the thickness of the second adhesive layer 57, and the thickness of the third adhesive layer 58 is about 1: 1: 1. The density of the conductive particles 53 contained in the insulating resin 54 is the same as that of the conventional anisotropic conductive film 20.
Is equal to the density of the conductive particles 22 contained in the insulating resin 21.

The manufacturing process flow of the semiconductor device according to the embodiment of the present invention is as shown in FIG.
7 to FIG. To explain this, a flexible substrate 40 as shown in FIG. 4 and the like is prepared (S1). The flexible substrate 40 is formed of polyimide or the like, and a plurality of wiring patterns 42 are formed of a conductive material on a component mounting surface 41 on which a bare IC chip 60 as a semiconductor component is mounted. Also, gold plating is applied to the tip of each wiring pattern 42 to form an electrode 43, and each wiring pattern 42 is covered with a coverlay 44 and insulated except for the electrode 43.

The anisotropic conductive film 50 used for mounting the bare IC chip 60 has a sheet shape with a large area, and is cut out slightly larger than the area of the predetermined surface 61 of the bare IC chip 60 ( S2). Second adhesive layer 52 not including conductive particles 53 of anisotropic conductive film 50 (third adhesive layer 58 when using anisotropic conductive film 50A having a three-layer structure shown in FIG. 5) Is bonded to the flexible substrate 40 (S3). More specifically, the anisotropic conductive film 50 is sucked from the protective sheet 55 side by the vacuum mechanism of the bonding tool 70 and placed on the component mounting surface 41 of the flexible substrate 40 as shown in FIG. I do. On the other hand, the flexible substrate 40 is set on the heater stage 71 and heated.
Then, the bonding tool 70 is positioned at a predetermined position on the flexible substrate 40, the bonding tool 70 is lowered, and the anisotropic conductive film 50 is pressed and heated from the protective tape 55 side. Next, the protective sheet 5 of the anisotropic conductive film 50
5 is peeled off. Thus, the flexible substrate 40 with the anisotropic conductive film 50 adhered thereto as shown in FIG. 5 is obtained.

On the other hand, a bare IC chip 60 as shown in FIG. 6 and the like is prepared (S4). This bare IC chip 60
A plurality of electrodes 62 formed of a conductive material such as Al (aluminum) on a predetermined surface 61
3 are arranged. Next, bumps 63 are formed on the surfaces of the electrodes 62 of the bare IC chip 60 by plating or the like (S5). The bump 63 is made of Au (gold) or Sn
-Pb (Tin-Lead) alloy and other metal materials.

In the next step (S6), a bare IC having bumps 63 formed on a first adhesive layer 51 including conductive particles 53 of an anisotropic conductive film 50 bonded to a flexible substrate 40 is formed. The chip 60 is bonded. In this step (S6), as shown in FIG. 6, the flexible substrate 40 is set on the heater stage 71 and heated. Then, the bare IC chip 60 is held by the bonding tool 70, and the bare IC chip 60 is attached to the anisotropic conductive film 5 on the flexible substrate 40.
0, the bonding tool 70 is lowered, and the anisotropic conductive film 50 adhered to the flexible substrate 40 is
The bare IC chip 60 is pressed against the first adhesive layer 51 containing the conductive particles 53, and the anisotropic conductive film 50 is pressed and heated.

As described above, as shown in FIG. 7, the component mounting surface 41 of the flexible substrate 40 and the predetermined surface 61 of the bare IC chip 60 are interposed via the insulating resin 54 of the anisotropic conductive film 50. Joined. The conductive particles 5 of the anisotropic conductive film 50
3 is pressed against the electrode 43 of the flexible substrate 40 by the bump 63, so that the electrode 43 on the flexible substrate 40 and the electrode 62 of the bare IC chip 60 are electrically connected. At the same time, since the flexible substrate 40 is flexible and bends due to pressure, the gap between the electrode 43 of the flexible substrate 40 and the bump 63 of the bare IC chip 60 disappears, Electrical connection between the conductive substrate 40 and the bare IC chip 60 is appropriately secured.

As described above, even when the flexible substrate 40 is warped, the electrode 43 of the flexible substrate 40 and the bare IC chip 60 are bent by bending to follow the bare IC chip 60 by pressing. The gap between the bump 63 is eliminated. In addition, since the two-layer anisotropic conductive film 50 is used, the second adhesives not including the conductive particles 53 are provided between the electrodes 43 formed on the component mounting surface 41 of the flexible substrate 40. Since it is covered by the agent layer 52, maintenance of circuit insulation can be easily realized. Further, although the anisotropic conductive film 50 having a two-layer structure is used, the conductive particles 53 of the first adhesive layer 51 are pressed by the bumps 63 of the bare IC chip 60 which are protrusions, and the flexible substrate 40 is formed. And the conductive particles 53 required and sufficient can be interposed between the bump 63 and the electrode 43, and it is not particularly necessary to increase the thickness of the anisotropic conductive film 50. That is, the distance (thickness) from the surface 41 to the surface 61 is realized by the first adhesive layer 51 and the second adhesive layer 52.
Therefore, contamination of the bonding tool 70 by the anisotropic conductive film 50 can be prevented, and the first adhesive layer 51 including the conductive particles 53 is thin and the second adhesive layer including no conductive particles 53 is included. 52 (also the third adhesive layer 58) is substantially transparent and has high transparency as a whole, so that it is easy to visually recognize the electrode 43 on the flexible substrate 40,
The alignment accuracy can be improved, and a high-quality semiconductor device can be manufactured.

In the case where the anisotropic conductive film 50A having a three-layer structure shown in FIG.
Mutual insulation can be achieved, and necessary and sufficient conductive particles 53 can be interposed between the bump 63 and the electrode 43.
In particular, it is not necessary to increase the thickness of the anisotropic conductive film 50A. Therefore, the bonding tool 70 using the anisotropic conductive film 50A is used.
And the first particles containing the conductive particles 53 can be prevented.
Since the adhesive layer 56 is thin and the overall transparency is high, it is also easy to visually recognize the electrode 43 on the flexible substrate 40, improve the alignment accuracy, and manufacture a high-quality semiconductor device. can do.

FIG. 8 shows a flexible substrate 40A according to a modification.
And examples of its use. This flexible substrate 40
8A, before the bare IC chip 60 is mounted, as shown in FIG.
2 (and, of course, at least one of them) may be implemented. Here, the semiconductor package 81 and the chip component 82 are soldered by, for example, a reflow soldering process. Thereafter, the bare IC chip 60 is mounted as described with reference to FIGS. Then, as shown in FIG. 8B, the board 83 and the board 8
4 and mounted. The substrate 83 is connected, for example, by an electrode 49A of the flexible substrate 40A, and the substrate 84 is connected by an electrode 49B of the flexible substrate 40A.

As described above, since the semiconductor package 81 and the chip component 82 are mounted before the mounting of the bare IC chip 60, the semiconductor package 81 and the chip component 82 are peeled off or damaged by heat after soldering or the like after mounting the bare IC chip 60. I do not have to worry. Also, a multi-chip module having a three-dimensional mounting structure as shown in FIG. 8B can be easily configured.

FIG. 9 shows a flexible substrate 40B according to a modification.
It is shown. Before the step of mounting the bare IC chip 60, a step of forming the printed resistor 48 on the flexible substrate 40B is performed. This print resistor 48 is formed as follows. A print resistor film 91 is provided on a sheet 90 for transferring the print resistor 48. On the other hand, the electrodes 47A and 47B of the printed resistor 48 are formed on the flexible substrate 40B. Therefore, the printed resistor film 91 of the sheet 90 is connected to the electrodes 47A and 47A.
B is positioned at the end so that the roller 9
The transfer is performed by applying pressure and heating in step 2. After this, Bear I
The C chip 60 is mounted as described with reference to FIGS. Thereby, when forming the multi-chip module, the printed resistor 48 is newly added to the flexible substrate 40.
Since it is not necessary to mount the resistor on the flexible substrate 40B, the bare IC chip 60, which is a semiconductor component mounted on the flexible substrate 40B, is peeled off by the heat when the resistor is mounted (soldered). Disappears.

FIG. 10 shows a flexible substrate 40 according to a modification.
C is shown. A rigid substrate 95 made of a glass epoxy material is fixed to the back surface of the flexible substrate 40C so as to be detachable. Specifically, 4 of the flexible substrate
A hole 97 is formed in the 0C and the hard substrate 95 at a position having a predetermined width from the edge portion. At the outer periphery of the hole 97, the flexible substrate 40C and the rigid substrate 95 are adhered by an adhesive, and inside the rectangle defined by the hole 97, the flexible substrate 40C and the rigid substrate 95 are bonded. Are in a non-adhered state.

Using the flexible substrate 40C, as described with reference to FIGS. 3 to 7, the bare IC chip 60 is attached to the flexible substrate 40 with the anisotropic conductive film 50 interposed therebetween.
When pressure-bonding to the component mounting surface of C under heating, the flexible substrate 40C is transported in the state of FIG. 10 to which the hard substrate 95 is added, and is fixed on the heater stage 71 of an automatic crimping machine. And the fixing position can be accurately determined. Then, at the stage where the mounting of the bare IC chip 60 is completed, the flexible substrate 40 </ b> C is cut off from the hard substrate 95 by cutting and connecting at a rectangular broken line portion drawn by the hole 97. This flexible substrate 40C is used for three-dimensional mounting, for example, as shown in FIG. Note that the flexible substrate of the present invention is configured by a combination of FIGS.
That is, components are mounted as needed, and a hard substrate is detachably provided on the back surface.

[0037]

As described above, the anisotropic conductive film of the present invention has a multilayer structure of an adhesive layer containing conductive particles and an adhesive layer not containing conductive particles. In the mounted state, the insulation in the vertical direction is maintained, and the electrical connection in the vertical direction can be obtained by pressing the protruding portion.

As described above, according to the method of manufacturing a semiconductor device of the present invention, since a flexible substrate is used, even if the substrate is warped, the substrate is bent at the time of pressurization, and the electrode of the flexible substrate is bent. On the other hand, the semiconductor components are joined, so that reliable electrical connection can be obtained.

As described above, according to the method of manufacturing a semiconductor device of the present invention, the anisotropic conductive film having a multilayer structure of the adhesive layer containing conductive particles and the adhesive layer not containing conductive particles is used. In the state of being simply placed, the insulation in the up-down direction is maintained, and the electrical connection in the up-down direction can be obtained by pressing the protruding portion.

As described above, according to the method of manufacturing a semiconductor device of the present invention, a step of forming a bump on an electrode of a semiconductor component is provided. Since the electrical connection is obtained via the bumps, it is possible to obtain the semiconductor component on which the bump is formed, and to electrically connect the electrodes of the semiconductor component and the electrodes of the flexible substrate.

As described above, according to the method of manufacturing a semiconductor device of the present invention, before the semiconductor component mounting step, the step of mounting at least one of the semiconductor package and the chip component on the flexible substrate is performed. Since the process is executed, the semiconductor package and the chip component are mounted first, and the semiconductor component mounted on the substrate does not peel off by the subsequent mounting.

As described above, according to the method of manufacturing a semiconductor device of the present invention, the step of forming a printed resistor on a flexible substrate is performed before the step of mounting a semiconductor component. When forming the module, it is not necessary to newly mount the resistance component on the flexible substrate, and the semiconductor component mounted on the substrate does not peel off by subsequent mounting.

As described above, according to the method for manufacturing a semiconductor device of the present invention, a flexible substrate is used in which a hard substrate is fixed to the back surface so as to be detachable. When the semiconductor component is press-bonded to the flexible substrate in a heated state in a heated state, it is easy to transport the flexible substrate and fix it to a heater stage or the like of an automatic crimping machine, and set the fixing position. It can be determined accurately.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a two-layer anisotropic conductive film according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view of a three-layered anisotropic conductive film according to an embodiment of the present invention.

FIG. 3 is a view showing a process flow of a method for manufacturing a semiconductor device according to an embodiment of the present invention;

FIG. 4 is a view showing a step of bonding an anisotropic conductive film in a method for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 5 is a diagram showing a state in which an anisotropic conductive film is bonded in the method for manufacturing a semiconductor device according to the embodiment of the present invention.

FIG. 6 is a diagram showing an initial step of bonding bare IC chips in a method of manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 7 is a view showing a final step of bonding bare IC chips in the method of manufacturing a semiconductor device according to the embodiment of the present invention;

FIG. 8 is a view showing a flexible substrate according to a first modification and an example of its use.

FIG. 9 is a view showing a flexible substrate according to a second modification.

FIG. 10 is a view showing a flexible substrate according to a third modification.

FIG. 11 is a view showing a step of bonding bare IC chips in a method of manufacturing a semiconductor device according to a conventional example.

[Explanation of symbols]

40, 40A to 40C Flexible substrate 43 Electrode 50, 50A Anisotropic conductive film 51, 56
First adhesive layer 52, 57 Second adhesive layer 58 Third
Adhesive layer 60 bare IC chip 62 electrode 63 bump

Claims (11)

[Claims] 1. An anisotropic conductive film having a multilayer structure of an adhesive layer containing conductive particles and an adhesive layer not containing conductive particles. 2. An anisotropic conductive film having a two-layer structure of a first adhesive layer containing conductive particles and a second adhesive layer containing no conductive particles. 3. It has a three-layer structure of a first adhesive layer containing conductive particles, a second adhesive layer not containing conductive particles, and a third adhesive layer not containing conductive particles. An anisotropic conductive film, wherein the first adhesive layer is sandwiched between the second adhesive layer and the third adhesive layer. 4. A flexible substrate having an electrode connected to an electrode of a semiconductor component, and an anisotropic conductive film covering the electrode of the flexible substrate corresponding to the semiconductor component to be mounted. And the thermocompression bonding is performed, and the thermocompression bonding is performed by mounting the thermoelectrically pressurized anisotropic conductive film with the electrode surface of the semiconductor facing the anisotropic conductive film. A method for manufacturing a semiconductor device, comprising: manufacturing a semiconductor device by obtaining electrical connection with an electrode of a substrate. 5. The method according to claim 1, further comprising the step of forming a bump on the electrode of the semiconductor component, wherein the electrical connection between the electrode of the semiconductor component and the electrode of the flexible substrate is obtained via the bump. The method for manufacturing a semiconductor device according to claim 4. 6. The anisotropic conductive film having a multilayer structure of an adhesive layer containing conductive particles and an adhesive layer not containing conductive particles is used according to claim 4 or 5. A method for manufacturing a semiconductor device. 7. The anisotropic conductive film has a two-layer structure or a three-layer structure of an adhesive layer containing conductive particles and an adhesive layer not containing conductive particles. 13. The method for manufacturing a semiconductor device according to item 5. 8. The method according to claim 4, wherein a step of mounting at least one of a semiconductor package and a chip component on the flexible substrate is performed before the semiconductor component mounting step. 13. The method for manufacturing a semiconductor device according to claim 1. 9. The method according to claim 4, wherein a step of forming a printed resistor on the flexible substrate is performed before the step of mounting the semiconductor component. A method for manufacturing a semiconductor device. 10. The method of manufacturing a semiconductor device according to claim 4, wherein a hard substrate is detachably fixed to a back surface of the flexible substrate. 11. The method for manufacturing a semiconductor device according to claim 4, wherein the semiconductor component is a bare IC chip.