JP2974819B2 - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof

Info

Publication number
JP2974819B2
JP2974819B2 JP3134423A JP13442391A JP2974819B2 JP 2974819 B2 JP2974819 B2 JP 2974819B2 JP 3134423 A JP3134423 A JP 3134423A JP 13442391 A JP13442391 A JP 13442391A JP 2974819 B2 JP2974819 B2 JP 2974819B2
Authority
JP
Japan
Prior art keywords
chip
bare
printed circuit
circuit board
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3134423A
Other languages
Japanese (ja)
Other versions
JPH04359457A (en
Inventor
政義 山口
和彦 笹原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP3134423A priority Critical patent/JP2974819B2/en
Publication of JPH04359457A publication Critical patent/JPH04359457A/en
Application granted granted Critical
Publication of JP2974819B2 publication Critical patent/JP2974819B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518Translational movements
    • H01L2224/85181Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]

Abstract

PURPOSE:To provide a semiconductor device of both-side surface mounting structure which has a small size and in which a high density mounting can be performed. CONSTITUTION:In a both-side resin-sealed semiconductor device in which at least one bare IC chip 6 is placed on each of both side surfaces of a printed board 1 formed with a wiring pattern 4, a resin sealing frame 9 higher than the height of the chip 6 to be placed on the surface is arranged at least on one of front and rear surfaces of the board 1. Further, at least one bare IC chip is placed on the front surface of the board, wired to wirings of the board, the frame is mounted on the surface, at least one bare IC chip is placed on the rear surface of the board, and wired to a wiring pattern. In a third embodiment of this invention, a hybrid integrated circuits in each of which at least one bare IC chip is placed on the front surface of the board formed with the wiring pattern, the chip is connected to the pattern, and its periphery is resin- sealed, are so adhered through insulating adhesive members that rear surface sides are opposed.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[発明の目的][Object of the Invention]

【0002】[0002]

【産業上の利用分野】本発明は、半導体装置およびその
製造方法にかかり、特に複数のベアICチップを両面基
板に実装して小形・高密度化を図ったCOB構造に関す
るものである
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly to a COB structure having a small size and a high density by mounting a plurality of bare IC chips on a double-sided board.

【0003】。[0003]

【従来の技術】近年、COB(Chip on boa
rd)などの高密度実装における軽薄短小高機能化の傾
向は高まる一方である。
2. Description of the Related Art In recent years, COB (Chip on Boa) has been developed.
rd) and the like, the tendency of light, thin, short, and high functionality in high-density mounting is increasing.

【0004】高機能化という点に着目すると、限られた
寸法の混成集積回路内により多くの品種を複数個並べて
搭載し接続するには困難な状況にある。
[0004] Focusing on higher functionality, it is difficult to mount and connect a large number of products in a hybrid integrated circuit of limited dimensions.

【0005】図11には全体図、図12は要部拡大図、
図13は斜視図を示す。この半導体装置では、プリント
基板1の表面に6つの多品種のベアICチップ(チップ
コーティング前のICチップ)6を搭載し、ボンディン
グワイヤ7を介してベアICチップの電極と基板の配線
パターンとの相互接続配線を行い、パッケージ8内に封
止を行うようにしたものである。9および10はリード
端子(配線パターン)である。
FIG. 11 is an overall view, FIG. 12 is an enlarged view of a main part,
FIG. 13 shows a perspective view. In this semiconductor device, six types of bare IC chips (IC chips before chip coating) 6 are mounted on the surface of a printed circuit board 1, and the electrodes of the bare IC chip and the wiring patterns of the substrate are connected via bonding wires 7. Interconnection wiring is performed, and sealing is performed in the package 8. 9 and 10 are lead terminals (wiring patterns).

【0006】このように長さの決められた混成集積回路
内にパッケージ内に多品種のベアICチップを複数個並
べて実装した場合、その種類および数が限られるばかり
でなく、混成集積回路内におけるベアICチップの占有
面積が大きくなり、ワイヤボンディングが難しくなると
いう問題がある。
When a plurality of various types of bare IC chips are arranged and mounted in a package in a hybrid integrated circuit having a fixed length as described above, not only the type and the number are limited, but also There is a problem that the area occupied by the bare IC chip increases and wire bonding becomes difficult.

【0007】ところでさらに高密度化しようとする場合
は、両面実装が望ましい。
In order to further increase the density, double-sided mounting is desirable.

【0008】しかしながら、この従来の構造の場合プリ
ント基板1裏面に部品等が実装されていると、ワイヤボ
ンディングの際に基板をクランプすることが不可能とな
るため、ベアベアチップを複数個実装する場合は図1
1,図12,図13に示したようにプリント基板片面に
しか実装できない等の不具合がある。
However, in the case of this conventional structure, if components and the like are mounted on the back surface of the printed board 1, it becomes impossible to clamp the board during wire bonding. Figure 1
1, as shown in FIGS. 12 and 13, there are disadvantages such as mounting on only one side of the printed circuit board.

【0009】また、従来技術で両面実装を行った例とし
ては、図14(a) および(b) ,図15に示すように、パ
ッケ―ジタイプのIC11を使用する方法がある。この
ようにパッケ―ジタイプのIC11を使用することによ
り、プリント基板1の両面に実装ができる。10はリー
ド端子である。
Further, as an example of performing the double-sided mounting according to the prior art, there is a method of using a package type IC 11 as shown in FIGS. 14 (a) and 14 (b) and FIG. By using the package type IC 11 as described above, mounting on both sides of the printed circuit board 1 is possible. 10 is a lead terminal.

【0010】この両面実装型の半導体装置は、片面にし
かベアICチップが実装できない図11,図12,図1
3に示したような混成集積回路に比べ、厚さが厚くなる
上、パッケ―ジタイプのIC11を両面に実装している
ため、ものによっては混成集積回路イズが、片面実装型
混成集積回路とほぼ同等レベルもしくは大きくなってし
まうことがある。
In this double-sided mounting type semiconductor device, a bare IC chip can be mounted on only one side, as shown in FIGS.
Compared with the hybrid integrated circuit as shown in FIG. 3, the thickness of the hybrid integrated circuit is thicker and the package type IC 11 is mounted on both sides. It may be the same level or larger.

【0011】また両面実装型の半導体装置の他の例とし
て、図16に示すように、プリント基板1の表面にベア
ICチップを実装するとともに、裏面にはチップコンデ
ンサ30,チップ抵抗31,SOP(Small Ou
tline Pakkage)32等のパッケージング
のなされた表面実装部品を搭載したものも提案されてい
る。しかしながら、従来の実装構造によると、ワイヤボ
ンディングに際してのクランプができないため、片面に
しかベアICチップ6を搭載することができない。した
がって、これらのベアICチップ6が搭載されている表
面でほとんど実装占有面積が決まり、裏面にはチップコ
ンデンサ30,チップ抵抗31,SOP(Small
Outline Package)32等の表面実装部
品が搭載されているにすぎず、かなりのすき間が生じ、
高密度に実装することが出来ない等の問題がある。
As another example of a double-sided mounting type semiconductor device, as shown in FIG. 16, a bare IC chip is mounted on the surface of a printed circuit board 1 and a chip capacitor 30, a chip resistor 31, and an SOP ( Small Ou
A device mounting a packaged surface mounting component such as Tline Package 32 has also been proposed. However, according to the conventional mounting structure, the bare IC chip 6 cannot be mounted on only one side because clamping cannot be performed at the time of wire bonding. Therefore, the mounting area is almost determined by the surface on which the bare IC chip 6 is mounted, and the chip capacitor 30, the chip resistor 31, and the SOP (Small) on the back surface.
(Outline Package) 32 or the like, only a surface mount component is mounted, and a considerable gap is generated.
There is a problem that high-density mounting cannot be performed.

【0012】そこでこの問題を解決すべく、ただ単に両
面にベアICチップ6を実装しようとすると最初に裏面
に搭載された部品(ベアICチップ,コンデンサ,抵
抗,SOP等)の領域だけはボンディングステ―ジ17
の方でザグリを入れて逃がさなければならず、さらに表
面にベアICチップ6を搭載してワイヤボンディングを
行なう際、このザグリを入れた領域(部分)はしっかり
とクランプができない。つまり、このザグリを入れた部
分に相当する反対側(表面)の部分に配線パターン4が
配設される場合はこの配線パターン4へのワイヤボンデ
ィングは十分プリント基板1上の配線パターン4を押え
付けてクランプすることができないため、熱と超音波エ
ネルギ―を効率良く、伝達できずボンディング性が著し
く悪く品質が大幅に低下する等の問題が生じる。
Therefore, in order to solve this problem, when the bare IC chips 6 are simply mounted on both sides, only the areas of the components (bare IC chips, capacitors, resistors, SOPs, etc.) initially mounted on the back surface are bonded. ―Di 17
In this case, the counterbore must be inserted and released, and when the bare IC chip 6 is mounted on the surface and wire bonding is performed, the area (portion) where the counterbore is inserted cannot be firmly clamped. That is, when the wiring pattern 4 is disposed on the opposite side (front surface) corresponding to the portion where the counterbore is inserted, the wire bonding to the wiring pattern 4 is sufficiently pressed down on the wiring pattern 4 on the printed circuit board 1. Therefore, heat and ultrasonic energy cannot be transmitted efficiently and efficiently, causing problems such as a remarkable poor bonding property and a significant reduction in quality.

【0013】この問題は、ワイヤボンディング方式の実
装構造に限定されることなく、フリップチップなどのフ
ェイスダウンボンディング方式すなわちボンディングワ
イヤを用いることなく実装を行うダイレクトボンディン
グ方式の実装構造においても、ボンディングに際しての
十分なクランプができなかったり、表面の平坦性が悪く
なったりして、十分に高精度の位置決めを行うことがで
きないという問題があった。
[0013] This problem is not limited to the mounting structure of the wire bonding method, but also to the mounting structure of the face-down bonding method such as a flip chip, that is, the direct bonding method in which mounting is performed without using a bonding wire. There has been a problem that sufficient clamping cannot be performed or the flatness of the surface deteriorates, and positioning with sufficiently high precision cannot be performed.

【0014】[0014]

【発明が解決しようとする問題点】このようにワイヤボ
ンディングに際しては、プリント基板,ベアICチッ
プ,金ワイヤに対して熱と超音波を効率良くまた均一に
伝え安定かつ良好な接合強度を確保しなければならな
い。そのためプリント基板をボンディングステ―ジに密
着させ、押え治具でしっかり固定させる必要がある。従
って、ボンディングステ―ジの基板接触面は凹凸のない
平坦な面になるような構造となっているために、プリン
ト基板裏面に部品等が実装されていることは許されず、
ワイヤボンディング方法によりベアICチップを複数個
実装する場合でもプリント基板片面にしか実装できず、
実装密度が上がらないという問題点があった。
As described above, in wire bonding, heat and ultrasonic waves are efficiently and uniformly transmitted to a printed circuit board, bare IC chips, and gold wires to ensure stable and good bonding strength. There must be. Therefore, it is necessary to bring the printed circuit board into close contact with the bonding stage and firmly fix it with a holding jig. Therefore, since the substrate contact surface of the bonding stage has a structure that is a flat surface without irregularities, it is not allowed that components and the like are mounted on the back surface of the printed circuit board.
Even when multiple bare IC chips are mounted by the wire bonding method, they can only be mounted on one side of the printed circuit board.
There is a problem that the mounting density does not increase.

【0015】また、ただ単に両面にベアICチップを実
装して高密度化をはかろうとすると、先に表面に実装さ
れた部品は裏面にベアICチップを搭載してワイヤボン
ディングする際はじゃまになり、この部分だけは逃げが
必要となる。
In order to increase the density by simply mounting a bare IC chip on both sides, the parts mounted first on the front surface are obstructive when the bare IC chip is mounted on the back surface and wire bonding is performed. And only this part needs escape.

【0016】これはワイヤボンディング方式の実装のみ
ならず、ワイヤレス(ダイレクト)ボンディング方式の
実装においても大きな問題となっていた。
This has been a serious problem not only in the implementation of the wire bonding method but also in the implementation of the wireless (direct) bonding method.

【0017】本発明は、前記実情に鑑みてなされたもの
で、小形でしかも高密度実装を行うことのできる両面実
装構造を提供することを目的とする。
The present invention has been made in view of the above circumstances, and has as its object to provide a small-sized double-sided mounting structure capable of high-density mounting.

【0018】[0018]

【問題点を解決する手段】上記課題を解決するための手
段として、請求項1記載の発明は、表面および裏面に実
装領域を有するプリント基板と、前記プリント基板表面
に金属ワイヤで接続される第1のベアICチップと、前
記表面にリフロー半田接続されるパッケージングされた
電子部品と、前記第1のベアICチップを樹脂封止する
ための樹脂を覆うように前記表面に設けられ、前記パッ
ケージングされた電子部品の実装されたときの高さより
も大きい高さを持つ枠と、前記裏面に金属ワイヤで接続
される第2のベアICチップとを具備する事を特徴とす
る。また、請求項2記載の発明は、プリント基板表面
に、パッケージングされた電子部品をリフロー半田接続
する工程と、前記プリント基板表面に、第1のベアIC
チップを金属ワイヤで接続する工程と、前記第1のベア
ICチップを樹脂で封止する工程と、前記パッケージン
グされた電子部品の実装されたときの高さよりも大きい
高さを持つ枠を、前記樹脂を覆うように前記プリント基
板表面に設ける工程と、前記枠をボンディングステージ
に載せた状態で前記プリント基板裏面に第2のベアIC
チップを金属ワイヤで接続する工程とを具備する事を特
徴とする。
Means for Solving the Problems As means for solving the above-mentioned problems, the invention according to claim 1 is directed to a printed circuit board having a mounting area on the front and back surfaces, and a printed circuit board connected to the printed circuit board surface by metal wires. A package comprising: a bare IC chip, a packaged electronic component connected to the surface by reflow soldering, and a resin for sealing the first bare IC chip with a resin; A frame having a height greater than the height of the mounted electronic component when mounted, and a second bare IC chip connected to the back surface by a metal wire. The invention according to claim 2 is a step of connecting the packaged electronic component to the surface of the printed circuit board by reflow soldering, and the step of connecting the first bare IC to the surface of the printed circuit board.
Connecting the chip with a metal wire, sealing the first bare IC chip with a resin, and forming a frame having a height larger than the height when the packaged electronic component is mounted, A step of providing the resin on the front surface of the printed board so as to cover the resin;
Connecting the chip with a metal wire.

【0019】望ましくはリード引き出し端子は、枠の形
成された面の反対側の面の所定の領域に配設する。
Preferably, the lead extraction terminal is provided in a predetermined area on the surface opposite to the surface on which the frame is formed.

【0020】さらにこの枠は、搭載部品およびその周辺
部品のいずれよりも高くなるように形成する必要があ
る。
Further, the frame needs to be formed so as to be higher than both the mounted component and its peripheral components.

【0021】[0021]

【0022】[0022]

【0023】[0023]

【0024】[0024]

【0025】[0025]

【作用】上記第1の構成によれば、表面に部品の高さよ
り高い枠を取付け、しかも裏面の配線パターンは表面の
枠の領域内にあるようにして両面に複数個のベアICチ
ップを実装するようにしているので、従来の片面ベアI
Cチップ実装に比べて実装面積の縮小化を図ることがで
きる。また従来の両面ベアICチップ実装に比べてボン
ディング性に優れ品質向上が期待できる。
According to the first configuration, a frame higher than the height of the component is mounted on the front surface, and a plurality of bare IC chips are mounted on both surfaces such that the wiring pattern on the rear surface is within the region of the frame on the front surface. So that the conventional single-sided bare I
The mounting area can be reduced as compared with the C chip mounting. Further, it is excellent in bonding property as compared with the conventional double-sided bare IC chip mounting, and can be expected to improve quality.

【0026】また、リード引き出し端子は、枠の形成さ
れた面の反対側の面の所定の領域に配設することによ
り、平坦性を良好に維持したまま、裏面側(枠の形成さ
れた面の反対側の面)の実装を行うことができる。
Further, the lead extraction terminals are arranged in a predetermined region on the surface opposite to the surface on which the frame is formed, so that the flatness is maintained and the back side (the surface on which the frame is formed) is maintained. On the opposite side) can be implemented.

【0027】さらにこの枠は、搭載部品およびその周辺
部品のいずれよりも高くなるように形成することによ
り、裏面側の実装に際しボンディングステージに密着性
よく装着することができる。
Further, by forming this frame to be higher than any of the mounted component and its peripheral components, the frame can be mounted on the bonding stage with good adhesion when mounting on the back surface side.

【0028】本発明の第2の方法によれば、プリント基
板表面に、少なくとも1個のベアICチップを搭載し、
前記プリント基板の配線パターンに結線し、プリント基
板の裏面にベアICチップを搭載し、結線するに先立
ち、この表面に、樹脂封止用の枠を取付けるようにして
いるため、この枠によってベアチップICが保護される
と共に表面の平坦性を保つことが可能となり、裏面側の
実装に際し、表面側をボンディングステージに密着性よ
く装着することができ、高精度で確実な実装を行うこと
ができる。
According to a second method of the present invention, at least one bare IC chip is mounted on a printed circuit board surface,
A bare IC chip is mounted on the back surface of the printed circuit board after being connected to the wiring pattern of the printed circuit board, and a resin sealing frame is mounted on this surface prior to the connection. Is protected and the flatness of the front surface can be maintained, and when mounting the rear surface side, the front surface side can be attached to the bonding stage with good adhesion, and high-precision and reliable mounting can be performed.

【0029】ここで、結線方法としては、ワイヤボンデ
ィング、ダイレクトボンディングのいずれをも適用可能
である。また、表面側の樹脂封止は、裏面側のチップの
搭載の前でも後でも良い。
Here, as the connection method, any of wire bonding and direct bonding can be applied. The resin sealing on the front side may be performed before or after mounting the chip on the back side.

【0030】[0030]

【0031】[0031]

【実施例】次に、本発明の実施例について、図面を参照
しつつ詳細に説明する。
Next, embodiments of the present invention will be described in detail with reference to the drawings.

【0032】図1は、本発明の一実施例であって、図1
(a) は断面図、図1(b) は(C方向から見た)上面図、
図1(c) は(D方向から見た)下面図、図1(d) は側面
図を示す。
FIG. 1 shows an embodiment of the present invention.
(a) is a cross-sectional view, FIG. 1 (b) is a top view (as viewed from the direction C),
FIG. 1 (c) shows a bottom view (as viewed from the direction D), and FIG. 1 (d) shows a side view.

【0033】この半導体装置では、プリント基板1の表
面および裏面にベアICチップ6を搭載し、これらを囲
むようにエポキシ樹脂からなる枠9を配設したことを特
徴とするものである。
This semiconductor device is characterized in that a bare IC chip 6 is mounted on the front and back surfaces of a printed circuit board 1, and a frame 9 made of epoxy resin is arranged so as to surround these.

【0034】すなわち、金の配線パターン4の形成され
たプリント基板1の表面に2つ裏面に1つの他品種のベ
アICチップ6を搭載し、ボンディングワイヤ7を介し
てチップの電極(ボンディングパッド)20と配線パタ
ーン4との間で相互に接続配線を行い、チップコーティ
ング樹脂8によって封止を行うようにしたものである。
19は圧着ボールである。また前記配線パターン4に
は、ガラエピを基材としてCu箔にNiめっきをし、そ
の後金めっきを施して形成されている外部接続用のリー
ド引き出し端子10が接続されている。
That is, one other type of bare IC chip 6 is mounted on the two surfaces of the printed circuit board 1 on which the gold wiring pattern 4 is formed, and the chip electrodes (bonding pads) are formed via bonding wires 7. The connection wiring is made mutually between the wiring pattern 20 and the wiring pattern 4, and sealing is performed with the chip coating resin 8.
19 is a crimp ball. The wiring pattern 4 is connected to a lead extraction terminal 10 for external connection, which is formed by plating a Cu foil with Ni as a base material and then plating it with gold.

【0035】30はコンデンサ,31は抵抗,32はS
OPであり、いずれも配線パターン4上に半田あるいは
銀ペーストなどの導電性接着剤で固着されている。
30 is a capacitor, 31 is a resistor, 32 is S
OPs are fixed on the wiring pattern 4 with a conductive adhesive such as solder or silver paste.

【0036】次に、この半導体装置の実装方法について
説明する。
Next, a method of mounting the semiconductor device will be described.

【0037】まず、両面に所定の配線パターン4の形成
されたプリント基板1を用意する。ついで、必要に応じ
て、スクリーン印刷法等を用いて、コンデンサ,抵抗,
SOPなどを接続する領域の配線パターン上に半田パタ
ーン(図示せず)を形成し、コンデンサ,抵抗,SOP
などをリフロー半田付けする。
First, a printed board 1 having a predetermined wiring pattern 4 formed on both sides is prepared. Then, if necessary, use a screen printing method or the like to
A solder pattern (not shown) is formed on a wiring pattern in an area for connecting an SOP, etc.
And reflow soldering.

【0038】この後、まずプリント基板1の表面側のチ
ップ搭載領域にベアICチップ6を銀ペーストなどを用
いて固着する(ダイボンディング)。
Thereafter, the bare IC chip 6 is first fixed to the chip mounting area on the front side of the printed circuit board 1 using a silver paste or the like (die bonding).

【0039】そして、図2乃至図4に示す方法でワイヤ
ボンディングを行う。
Then, wire bonding is performed by the method shown in FIGS.

【0040】ワイヤボンディングは次のようにして行わ
れる。
The wire bonding is performed as follows.

【0041】まずに銀ペ―スト5を介してベアICチッ
プ6を実装したプリント基板1をヒ―タ内蔵(図示され
ていない)の加熱されたボンディングステ―ジ17上に
載せ位置決めをする。
First, the printed circuit board 1 on which the bare IC chip 6 is mounted via the silver paste 5 is placed on a heated bonding stage 17 with a built-in heater (not shown) and positioned.

【0042】この後、押え治具15にてプリント基板1
をクランプする。この段階が終了するとワイヤボンティ
ングが開始される。
Thereafter, the printed circuit board 1 is
Clamp. When this step ends, wire bonding is started.

【0043】まず、図2に示すようにキャピラリ―12
に金ワイヤ7を通した後に電気ト―チ棒14から高電圧
を印加し、放電させて金ワイヤ7の1部を溶融し、金ボ
―ル21を作る。
First, as shown in FIG.
After passing through the gold wire 7, a high voltage is applied from the electric torch rod 14 to discharge and melt a part of the gold wire 7 to form a gold ball 21.

【0044】次に図4に示すように、超音波ホ―ン13
に取付けたキャピラリ―12を降下させ、ボンディング
ステージ17上にクランプされたプリント基板1上のベ
アICチップ6の所定の電極20に圧着させると同時に
超音波発振器(図示しない)から超音波エネルギ―をキ
ャピラリ―12に伝達させ接合させる。これをファ―ス
トボンディングという(図2)。
Next, as shown in FIG.
The capillary 12 mounted on the printed circuit board 1 clamped on the bonding stage 17 is pressed down onto the predetermined electrode 20 of the bare IC chip 6 on the bonding stage 17, and simultaneously the ultrasonic energy from an ultrasonic oscillator (not shown) is applied. It is transmitted to the capillary 12 and joined. This is called fast bonding (FIG. 2).

【0045】このファ―ストボンディングが終了する
と、キャピラリ―12を上昇させXYテ―ブル(図示し
ない)上に搭載されているボンディングヘッド(図示し
ない)をプリント基板1の配線パターン4に移動させ、
図3に示すように再度キャピラリ―12を降下させプリ
ント基板1の所定のリ―ド端子4に金ワイヤ7を圧着さ
せると同時に超音波発振器(図示しない)からの超音波
エネルギ―を印加させ接合させる。これをセカンドボン
ディングという。
When the first bonding is completed, the capillary 12 is lifted, and the bonding head (not shown) mounted on the XY table (not shown) is moved to the wiring pattern 4 of the printed circuit board 1.
As shown in FIG. 3, the capillary 12 is lowered again and the gold wire 7 is crimped to a predetermined lead terminal 4 of the printed circuit board 1 and, at the same time, ultrasonic energy from an ultrasonic oscillator (not shown) is applied to join. Let it. This is called second bonding.

【0046】その後、キャピラリ―12を上昇させ、途
中で下クランパ―22を閉じ、金ワイヤ7をプリント基
板1の配線パターン4より切断する。
Thereafter, the capillary 12 is raised, the lower clamper 22 is closed halfway, and the gold wire 7 is cut from the wiring pattern 4 of the printed circuit board 1.

【0047】このようにしてワイヤボンディングの1サ
イクルが終了する。
Thus, one cycle of the wire bonding is completed.

【0048】この工程を繰り返して、複数のベアICチ
ップ6の電極20とプリント基板1の配線パターン4を
金ワイヤ7にて結線する。このボンディング方法を熱圧
着超音波併用ボ―ルボンディングと言う。
By repeating this process, the electrodes 20 of the plurality of bare IC chips 6 and the wiring patterns 4 of the printed circuit board 1 are connected by the gold wires 7. This bonding method is referred to as thermocompression bonding ultrasonic combined ball bonding.

【0049】このようにして表面に搭載されているベア
ICチップ6の電極20とプリント基板1の配線パター
ン4とを金ワイヤで結線した後、ベアICチップ6のま
わりをチップコ―ティング樹脂8を用いて封止する。
After connecting the electrodes 20 of the bare IC chip 6 mounted on the surface and the wiring patterns 4 of the printed circuit board 1 with gold wires, the chip coating resin 8 is applied around the bare IC chip 6. And seal it.

【0050】つまり、この装置のボンディングステ―ジ
17の面はクランプのために凹凸のない平らな面になる
ような構造になっている。
That is, the surface of the bonding stage 17 of this device has a structure such that it has a flat surface without unevenness due to clamping.

【0051】続いて、コンデンサ30,チップ抵抗31
は半田パターン上に載置し加熱することにより固着す
る。
Subsequently, the capacitor 30 and the chip resistor 31
Are placed on a solder pattern and fixed by heating.

【0052】そして図1に示すようにあらかじめ形成さ
れたポリイミド製の枠9を絶縁性接着剤を用いて固着
し、枠の上端をつなぐ面とプリント基板表面とが平行と
なるようにする。
Then, as shown in FIG. 1, a polyimide frame 9 formed in advance is fixed using an insulating adhesive so that the surface connecting the upper ends of the frame and the surface of the printed circuit board are parallel to each other.

【0053】この後、このプリント基板を裏返しボンデ
ィングステージにこの枠9が密着するように設置する。
このボンディングステ―ジ17の面はクランプのために
凹凸のない平らな面になっているが、枠のためにプリン
ト基板裏面が平衡度を保つように良好に密着性よくボン
ディングステ―ジ17に載置される。
Thereafter, the printed circuit board is placed on a bonding stage which is turned upside down so that the frame 9 is in close contact with the bonding stage.
The surface of the bonding stage 17 is flat without any irregularities due to the clamping, but the surface of the printed circuit board is fixed to the bonding stage 17 with good adhesion so that the back surface of the printed circuit board is kept balanced by the frame. Is placed.

【0054】そして同様にして、プリント基板1の裏面
側のチップ搭載領域にベアICチップ6を銀ペーストな
どを用いて固着する(ダイボンディング)。
Then, similarly, the bare IC chip 6 is fixed to the chip mounting area on the back surface side of the printed circuit board 1 using a silver paste or the like (die bonding).

【0055】そして、また同様に図2乃至図4に示した
通常の方法でワイヤボンディングを行う。
Then, similarly, wire bonding is performed by the usual method shown in FIGS.

【0056】続いて、SOP32を裏面側の半田パター
ン上に載置し加熱することにより固着する(リフロー半
田付け)。
Subsequently, the SOP 32 is placed on the solder pattern on the back side and is fixed by heating (reflow soldering).

【0057】そしてプリント基板の裏面側にもあらかじ
め形成されたポリイミド製の枠9を絶縁性接着剤を用い
て固着する。
Then, a polyimide frame 9 formed in advance is fixed to the back side of the printed circuit board using an insulating adhesive.

【0058】そして最後に、エポキシ樹脂を枠9内に充
填し、チップコーティング樹脂8から露呈する端部の領
域Rの配線パターン4に接続するようにリードフレーム
10を嵌合し、半田ディップして接続する。
Finally, the frame 9 is filled with epoxy resin, and the lead frame 10 is fitted so as to be connected to the wiring pattern 4 in the region R at the end exposed from the chip coating resin 8 and subjected to solder dip. Connecting.

【0059】このリードフレームは図5(a) および(b)
に平面図およびそのA−A断面図を示すように42アロ
イから構成され、先端が断面コの字状をなすように形成
され、他端をタイバーTで一体的に形成されており、プ
リント基板との接続後、タイバーTを切除するようにな
っている。なお、この基板との接続部は、プリント基板
の配線パターンと良好に接続するようにさせるため、や
や先端の間隔が狭くなるように形成されており、プリン
ト基板を挟んで嵌め、良好に接合できる。
This lead frame is shown in FIGS. 5 (a) and 5 (b).
As shown in a plan view and an A-A cross-sectional view thereof, a 42-alloy is formed, the tip is formed to have a U-shaped cross section, and the other end is integrally formed by a tie bar T. After the connection, the tie bar T is cut off. In addition, the connection portion with the substrate is formed so that the interval between the tips is slightly reduced in order to make good connection with the wiring pattern of the printed circuit board, and the printed circuit board can be fitted and satisfactorily joined. .

【0060】このようにして、両面COB構造が完成す
る。
Thus, a double-sided COB structure is completed.

【0061】この方法によれば、プリント基板の両面に
ベアICチップ6が信頼性よく実装でき、プリント基板
1の縮小化及び高密度化を図ることができる。
According to this method, the bare IC chips 6 can be mounted on both sides of the printed board with high reliability, and the printed board 1 can be reduced in size and increased in density.

【0062】なお、前記実施例では、樹脂封止は両面の
ベアチップ搭載後に行うようにしたが、表面に搭載した
のち、一旦表面側の樹脂封止を行い、裏面側のチップを
搭載するようにしてもよい。
In the above embodiment, the resin sealing is performed after mounting the bare chips on both surfaces. However, after mounting on the front surface, the resin sealing on the front surface side is performed once, and the chip on the rear surface side is mounted. You may.

【0063】また、前記実施例では枠は両面に形成した
が、片面のみでもよい。
In the above embodiment, the frame is formed on both sides, but may be formed on only one side.

【0064】さらにまた、各面での実装はベアICチッ
プ、他の実装部品の順に行ったが、その逆でもよいこと
はいうまでもない。
Further, the mounting on each surface was performed in the order of the bare IC chip and the other mounting components, but it is needless to say that the reverse is also possible.

【0065】実施例2 次に、本発明の第2の実施例について説明する。図6
(a) および(b) は全体平面図および断面図,図7(a) お
よび(b) は要部拡大平面図および断面図,図8は分解構
造図,図9は斜視図である。
Embodiment 2 Next, a second embodiment of the present invention will be described. FIG.
7A and 7B are an overall plan view and a sectional view, FIGS. 7A and 7B are enlarged plan views and a sectional view of a main part, FIG. 8 is an exploded structural view, and FIG. 9 is a perspective view.

【0066】この半導体装置は、それぞれの金の配線パ
ターン4の形成された厚さ0.8mmのプリント基板1
a,1b表面にそれぞれ3こづつのベアICチップ6を
搭載し、このベアICチップと配線パターンとを接続す
るとともに、各ベアICチップ6のまわりを樹脂封止し
て、2つの混成集積回路を形成し、これらのプリント基
板1a,1bの裏面側が相対向するように絶縁性の接着
部材2を介して貼着し、実施例1と同様に端部の領域R
の配線パターン4に接続するようにリードフレーム10
を嵌合し、半田ディップして接続したものである。ここ
で金の配線パターン4は、表面を膜厚0.5μm の金め
っき層で被覆したものである。
This semiconductor device has a printed circuit board 1 having a thickness of 0.8 mm on which each gold wiring pattern 4 is formed.
The three hybrid ICs are mounted by mounting three bare IC chips 6 on the surfaces a and 1b respectively, connecting the bare IC chips to the wiring patterns, and sealing the area around each bare IC chip 6 with resin. Is formed, and the printed circuit boards 1a and 1b are bonded via an insulating adhesive member 2 so that the back sides thereof face each other.
Lead frame 10 so as to be connected to wiring pattern 4 of
Are fitted, and connected by solder dip. The gold wiring pattern 4 has a surface covered with a gold plating layer having a thickness of 0.5 μm.

【0067】ここで1a,1bはプリント基板、2は両
プリント基板を接続するための絶縁性接着剤、3は金メ
ッキされたパタ―ンでありベアICチップをダイボンデ
ィングするためのアイランド(ダイパッド)である。4
は金の配線パタ―ンである。6はベアICチップであ
り、銀ペ―スト5を介してアイランドにダイボンディン
グされる。このダイボンディングされたベアICチップ
からプリント基板の配線パターン(ボンディングパッ
ド)4に、金ワイヤ7にてワイヤボンディングを行う。
8はダイボンディングされたベアICチップとワイヤボ
ンディングされた金ワイヤの保護のための樹脂である。
10は外部接続用のリ―ドフレ―ムであり、2枚のプリ
ント基板を挟持する。
Here, 1a and 1b are printed boards, 2 is an insulating adhesive for connecting both printed boards, 3 is a gold-plated pattern, and an island (die pad) for die-bonding a bare IC chip. It is. 4
Is a gold wiring pattern. Reference numeral 6 denotes a bare IC chip, which is die-bonded to the island via the silver paste 5. Wire bonding is performed from the die-bonded bare IC chip to a wiring pattern (bonding pad) 4 on a printed circuit board with a gold wire 7.
Numeral 8 is a resin for protecting the die-bonded bare IC chip and the wire-bonded gold wire.
Reference numeral 10 denotes a lead frame for external connection, which sandwiches two printed circuit boards.

【0068】次に、この半導体装置の製造方法について
説明する。
Next, a method of manufacturing the semiconductor device will be described.

【0069】まず、両面に所定の配線パターン4の形成
されたプリント基板1を用意する。ついで、各プリント
基板1a,1bの表面のチップ搭載領域にベアICチッ
プ6をシルバーペーストなどを用いて固着する(ダイボ
ンディング)。
First, a printed circuit board 1 having predetermined wiring patterns 4 formed on both sides is prepared. Next, the bare IC chip 6 is fixed to the chip mounting area on the surface of each of the printed boards 1a and 1b using a silver paste or the like (die bonding).

【0070】そして、実施例1に図2乃至図4に示した
方法でそれぞれに対しワイヤボンディングを行う。
Then, wire bonding is performed on each of the first embodiment by the method shown in FIGS.

【0071】このようにしてそれぞれ片面実装のなされ
た各プリント基板1a,1bの裏面側が向かい合うよう
に絶縁性接着剤を介して固着する。
The printed circuit boards 1a and 1b thus mounted on one side are fixed via an insulating adhesive so that the back sides face each other.

【0072】そして最後に、プリント基板の1端部の領
域Rの配線パターン4に接続するようにリードフレーム
10を嵌合し、半田ディップして接続する。
Finally, the lead frame 10 is fitted so as to be connected to the wiring pattern 4 in the region R at one end of the printed circuit board, and is connected by solder dip.

【0073】このリードフレームは実施例1で示したの
と同様に、42アロイから構成され、先端が断面コの字
状をなすように形成され、他端をタイバーTで一体的に
形成されており、プリント基板との接続後、タイバーT
を切除する。
This lead frame is made of a 42 alloy in the same manner as shown in the first embodiment, is formed so that its tip has a U-shaped cross section, and the other end is integrally formed with a tie bar T. After connecting with the printed circuit board, tie bar T
Cut off.

【0074】このようにして、擬両面COB構造が完成
する。
Thus, a pseudo double-sided COB structure is completed.

【0075】かかる構造をとることにより、複数個のベ
アICチップを実装する場合でも両面実装を高密度に行
うことが可能になるため従来例に比較しかなりの小形化
をはかることが可能となる。
With this structure, even when a plurality of bare IC chips are mounted, double-sided mounting can be performed at a high density, so that the size can be considerably reduced as compared with the conventional example. .

【0076】また、通常の片面実装構造の半導体装置を
実装すれば良いため、実装方法を何等変更することな
く、容易に実装可能である。
Further, since it is only necessary to mount a semiconductor device having a normal single-sided mounting structure, the semiconductor device can be easily mounted without any change in the mounting method.

【0077】なお、この実施例では、配線パターンはプ
リント基板の表面側にのみ形成したが、裏面側にも形成
しスルーホールを介して接続するようにしてもよく、こ
れにより回路設計に自由度が増し、高密度化に際しても
製造が容易で信頼性の高い半導体装置を得ることができ
る。
In this embodiment, the wiring pattern is formed only on the front surface side of the printed circuit board. However, the wiring pattern may be formed on the back surface side and connected via through holes, thereby providing a high degree of freedom in circuit design. And a highly reliable semiconductor device that can be easily manufactured even when the density is increased.

【0078】また、前記実施例ではリード端子10は、
2枚のプリント基板を挾み込むようにして装着したが、
図10に断面図を示すように、スルーホールHを介して
表面側の配線パターンと接続するようにプリント基板の
裏面側にも配線パターン4sを形成し、この配線パター
ン4sに接続するようにリード端子10を2枚のプリン
ト基板の間に挾み込むようにしても良い。
In the above embodiment, the lead terminal 10
I installed it so as to sandwich the two printed boards,
As shown in the cross-sectional view of FIG. 10, a wiring pattern 4s is also formed on the back side of the printed circuit board so as to be connected to the wiring pattern on the front side via the through hole H, and a lead is connected to the wiring pattern 4s. The terminal 10 may be sandwiched between two printed boards.

【0079】なお、この例では2枚のプリント基板を重
ねるようにしているため、基板の厚さは薄いほうが望ま
しく、また薄い基板を用いて多層構造にしても良いこと
は言うまでもない。
In this example, since two printed boards are overlapped with each other, it is desirable that the thickness of the boards be thin, and it is needless to say that a multilayer structure may be used by using a thin board.

【0080】また、各実施例において、チップと配線パ
ターンとの間の接続はワイヤボンディングによって行う
ようにしたが、必ずしもワイヤボンディングを用いる必
要はなく、フリップチップ、TAB方式などのワイヤレ
ス(ダイレクト)ボンディングを用いたものにも適用可
能である。
In each embodiment, the connection between the chip and the wiring pattern is made by wire bonding. However, it is not always necessary to use wire bonding, and wireless (direct) bonding such as flip chip or TAB method is used. The present invention is also applicable to those using.

【0081】[0081]

【発明の効果】以上説明したように、本発明の第1で
は、プリント基板の少なくとも一方の面に、部品の高さ
より高い枠を取付け、両面に複数個のベアチップを実装
した構造であるため、実装が容易でかつ小形化、高密度
化が可能となる。
As described above, the first aspect of the present invention has a structure in which a frame higher than the component height is mounted on at least one surface of the printed circuit board and a plurality of bare chips are mounted on both surfaces. Mounting is easy, and miniaturization and high density are possible.

【0082】本発明の第2の方法によれば、プリント基
板表面に、少なくとも1個のベアICチップを搭載し、
前記プリント基板の配線パターンに結線したのち、プリ
ント基板の裏面にベアICチップを搭載し結線するに先
立ち、この表面側に、樹脂封止用の枠を取付けるように
しているため、ボンディングステージに密着性よく装着
することができ、高精度で確実な実装を行うことができ
る。
According to the second method of the present invention, at least one bare IC chip is mounted on the surface of a printed circuit board,
After connecting to the wiring pattern of the printed circuit board, before mounting the bare IC chip on the back surface of the printed circuit board and connecting, a frame for resin sealing is attached to the front surface side. The mounting can be performed with high accuracy, and high-precision and reliable mounting can be performed.

【0083】本発明の第3では、ベアICチップを使用
して片面実装されたCOB構造の2枚の実装プリント基
板を用いて絶縁性の接着剤及びプレ―トを介し貼り合せ
疑似的な両面COB構造の混成集積回路としたため、大
幅な小形・高密度化を行うことが可能となる。
According to the third aspect of the present invention, two pseudo printed boards having a COB structure mounted on one side using bare IC chips are bonded via an insulating adhesive and a plate. Since the hybrid integrated circuit has a COB structure, it is possible to significantly reduce the size and increase the density.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施例の混成集積回路を示す
図。
FIG. 1 is a diagram showing a hybrid integrated circuit according to a first embodiment of the present invention.

【図2】ワイヤボンディング工程を示す図。FIG. 2 is a view showing a wire bonding step.

【図3】ワイヤボンディング工程を示す図。FIG. 3 is a view showing a wire bonding step.

【図4】ワイヤボンディング工程を示す図。FIG. 4 is a view showing a wire bonding step.

【図5】本発明の第1の実施例に用いられるリードフレ
ームを示す図。
FIG. 5 is a view showing a lead frame used in the first embodiment of the present invention.

【図6】本発明の第2の実施例の混成集積回路を示す
図。
FIG. 6 is a diagram showing a hybrid integrated circuit according to a second embodiment of the present invention.

【図7】同混成集積回路の要部拡大図。FIG. 7 is an enlarged view of a main part of the hybrid integrated circuit.

【図8】同分解構造図。FIG. 8 is an exploded structural view of the same.

【図9】同斜視図FIG. 9 is a perspective view of the same.

【図10】本発明の他の実施例を示す図。FIG. 10 is a diagram showing another embodiment of the present invention.

【図11】従来例の混成集積回路を示す図。FIG. 11 is a diagram showing a conventional hybrid integrated circuit.

【図12】従来例の混成集積回路を示す図。FIG. 12 is a diagram showing a hybrid integrated circuit of a conventional example.

【図13】従来例の混成集積回路を示す図。FIG. 13 is a diagram showing a conventional hybrid integrated circuit.

【図14】従来例の混成集積回路を示す図。FIG. 14 is a diagram showing a conventional hybrid integrated circuit.

【図15】従来例の混成集積回路を示す図。FIG. 15 is a diagram showing a conventional hybrid integrated circuit.

【図16】従来例の混成集積回路を示す図。FIG. 16 is a diagram showing a conventional hybrid integrated circuit.

【符号の説明】[Explanation of symbols]

1a,1b プリント基板 2 絶縁性接着剤 3 ダイパッド 4,4s 配線パターン 5 銀ペ―スト 6 ベアICチップ 7 金ワイヤ 8 チップコ―ティング樹脂 9 枠 10 外部接続用リ―ドフレ―ム 12 キャピラリ― 13 超音波ホ―ン 14 電気ト―チ棒 15 押え治具 17 ボンディングステ―ジ 19 圧着ボ―ル 20 ベアICチップの電極(ボンディングパッド) 21 金ボ―ル 22 下クランパ 30 コンデンサ 31 抵抗 32 SOP T タイバー 1a, 1b Printed circuit board 2 Insulating adhesive 3 Die pad 4, 4s Wiring pattern 5 Silver paste 6 Bare IC chip 7 Gold wire 8 Chip coating resin 9 Frame 10 External connection lead frame 12 Capillary 13 More than Sound horn 14 Electric torch rod 15 Holding jig 17 Bonding stage 19 Crimp ball 20 Bare IC chip electrode (bonding pad) 21 Gold ball 22 Lower clamper 30 Capacitor 31 Resistance 32 SOP T Tie bar

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6,DB名) H01L 23/28 H01L 21/56 H01L 25/00 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 23/28 H01L 21/56 H01L 25/00

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】表面および裏面に実装領域を有するプリン
ト基板と、 前記プリント基板表面に金属ワイヤで接続される第1の
ベアICチップと、 前記表面にリフロー半田接続されるパッケージングされ
た電子部品と、 前記第1のベアICチップを樹脂封止するための樹脂を
覆うように前記表面に設けられ、前記パッケージングさ
れた電子部品の実装されたときの高さよりも大きい高さ
を持つ枠と、 前記裏面に金属ワイヤで接続される第2のベアICチッ
プと、 を具備する半導体装置。
1. A printed circuit board having a mounting area on a front surface and a back surface, a first bare IC chip connected to a surface of the printed circuit board by a metal wire, and a packaged electronic component connected to the surface by reflow soldering And a frame provided on the surface so as to cover a resin for sealing the first bare IC chip with a resin, and having a height greater than a height when the packaged electronic component is mounted. A second bare IC chip connected to the back surface by a metal wire.
【請求項2】プリント基板表面に、パッケージングされ
た電子部品をリフロー半田接続する工程と、 前記プリント基板表面に、第1のベアICチップを金属
ワイヤで接続する工程と、 前記第1のベアICチップを樹脂で封止する工程と、 前記パッケージングされた電子部品の実装されたときの
高さよりも大きい高さを持つ枠を、前記樹脂を覆うよう
に前記プリント基板表面に設ける工程と、 前記枠をボンディングステージに載せた状態で前記プリ
ント基板裏面に第2のベアICチップを金属ワイヤで接
続する工程とを具備する半導体装置の製造方法。
2. A step of connecting a packaged electronic component to the surface of the printed circuit board by reflow soldering; a step of connecting a first bare IC chip to the surface of the printed circuit board with a metal wire; Encapsulating the IC chip with a resin, and providing a frame having a height greater than a height of the packaged electronic component when mounted on the surface of the printed circuit board so as to cover the resin; Connecting a second bare IC chip to the back surface of the printed circuit board with a metal wire while the frame is placed on a bonding stage.
JP3134423A 1991-06-05 1991-06-05 Semiconductor device and manufacturing method thereof Expired - Fee Related JP2974819B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3134423A JP2974819B2 (en) 1991-06-05 1991-06-05 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3134423A JP2974819B2 (en) 1991-06-05 1991-06-05 Semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH04359457A JPH04359457A (en) 1992-12-11
JP2974819B2 true JP2974819B2 (en) 1999-11-10

Family

ID=15128040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3134423A Expired - Fee Related JP2974819B2 (en) 1991-06-05 1991-06-05 Semiconductor device and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP2974819B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2570637B2 (en) * 1994-11-28 1997-01-08 日本電気株式会社 MCM carrier
JP2861847B2 (en) * 1995-01-31 1999-02-24 日本電気株式会社 Semiconductor device
KR100505391B1 (en) * 1997-12-16 2005-11-14 주식회사 하이닉스반도체 Semiconductor and manufacture method

Also Published As

Publication number Publication date
JPH04359457A (en) 1992-12-11

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