JPH0319692B2 - - Google Patents
Info
- Publication number
- JPH0319692B2 JPH0319692B2 JP55059988A JP5998880A JPH0319692B2 JP H0319692 B2 JPH0319692 B2 JP H0319692B2 JP 55059988 A JP55059988 A JP 55059988A JP 5998880 A JP5998880 A JP 5998880A JP H0319692 B2 JPH0319692 B2 JP H0319692B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- pattern
- deposited layer
- workpiece
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Drying Of Semiconductors (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5998880A JPS56157026A (en) | 1980-05-08 | 1980-05-08 | Formation of pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5998880A JPS56157026A (en) | 1980-05-08 | 1980-05-08 | Formation of pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56157026A JPS56157026A (en) | 1981-12-04 |
| JPH0319692B2 true JPH0319692B2 (enExample) | 1991-03-15 |
Family
ID=13129051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5998880A Granted JPS56157026A (en) | 1980-05-08 | 1980-05-08 | Formation of pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56157026A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63198327A (ja) * | 1987-02-13 | 1988-08-17 | Nec Corp | 電子ビ−ム脱離による吸着層の超微細パタ−ン形成方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2342544A1 (fr) * | 1975-05-28 | 1977-09-23 | Pechiney Aluminium | Procede de fabrication de fils en alliage al-mg-si destines a la fabrication de cables aeriens de transport d'energie |
| JPS55129345A (en) * | 1979-03-29 | 1980-10-07 | Ulvac Corp | Electron beam plate making method by vapor phase film formation and vapor phase development |
-
1980
- 1980-05-08 JP JP5998880A patent/JPS56157026A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56157026A (en) | 1981-12-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4202914A (en) | Method of depositing thin films of small dimensions utilizing silicon nitride lift-off mask | |
| JPS6350860B2 (enExample) | ||
| US5023204A (en) | Method of manufacturing semiconductor device using silicone protective layer | |
| US6218084B1 (en) | Method for removing photoresist layer | |
| US4774164A (en) | Chrome mask etch | |
| US4470871A (en) | Preparation of organic layers for oxygen etching | |
| US6379872B1 (en) | Etching of anti-reflective coatings | |
| JPH0466345B2 (enExample) | ||
| JP2829301B2 (ja) | 絶縁膜の形成方法 | |
| JP3865323B2 (ja) | エッチング方法及び半導体装置の製造方法 | |
| JPH0314172B2 (enExample) | ||
| JPH01280316A (ja) | ドライエッチング方法 | |
| KR20010091901A (ko) | 반도체장치의 제조방법 | |
| JPS6213813B2 (enExample) | ||
| JPH07106310A (ja) | ドライエッチング方法 | |
| JPH0143453B2 (enExample) | ||
| KR101951456B1 (ko) | 반도체 제조 공정에 있어서 미세 실리콘 패턴을 형성하기 위한 신규 식각방법 | |
| KR100317310B1 (ko) | 반도체소자의콘택홀형성방법 | |
| JP2768462B2 (ja) | 集積回路デバイスの製造方法 | |
| JP3104388B2 (ja) | ドライエッチング方法 | |
| JPS582031A (ja) | 半導体装置の製造方法 | |
| JPH0738388B2 (ja) | パタ−ン形成法 | |
| KR900005344B1 (ko) | 반도체 기판의 평탄화 방법 | |
| KR950006980B1 (ko) | 미세 패턴 형성을 위한 삼층 감광막 제조방법 | |
| JPS62200732A (ja) | 半導体装置の製造方法 |