JPH03195053A - Inverter device - Google Patents

Inverter device

Info

Publication number
JPH03195053A
JPH03195053A JP1335562A JP33556289A JPH03195053A JP H03195053 A JPH03195053 A JP H03195053A JP 1335562 A JP1335562 A JP 1335562A JP 33556289 A JP33556289 A JP 33556289A JP H03195053 A JPH03195053 A JP H03195053A
Authority
JP
Japan
Prior art keywords
power
inverter
small
substrate
main circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1335562A
Other languages
Japanese (ja)
Other versions
JP2735912B2 (en
Inventor
Sumio Ishihara
Akira Kazami
Katsumi Okawa
Susumu Ota
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP1335562A priority Critical patent/JP2735912B2/en
Publication of JPH03195053A publication Critical patent/JPH03195053A/en
Application granted granted Critical
Publication of JP2735912B2 publication Critical patent/JP2735912B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires

Abstract

PURPOSE: To enhance the heat-dissipating property of a power element by a method wherein the power element used as a main circuit of an inverter is mounted, via a ceramic piece, on a metal substrate exposed in a hole of an insulating-resin thin layer pasted on the substrate and a plurality of elements, for small-signal use, which drive the main circuit are arranged on other regions.
CONSTITUTION: A plurality of holes 2a are made in prescribed positions of an insulating thin layer 2 pasted on one main face of a substrate 1; power elements 5 are mounted, via ceramic pieces 4 of a small thermal resistance ratio, on the substrate 1 exposed in the holes 2a. The power elements 5 and conductive routes 3a for power use are bonded and connected by using aluminum wires and are bridge-connected so as to form a main circuit of an inverter. On the other hand, a plurality of elements 6, for small-signal use, which do not generate heat such as transistors or the like are mounted on conductive routes 3b, for small-signal use, which have been formed on the insulating thin layer 2; a drive circuit used to drive the main circuit of the inverter and a protective circuit are constituted. Thereby, the heat-dissipating property of the power elements can be enhanced.
COPYRIGHT: (C)1991,JPO&Japio
JP1335562A 1989-12-25 1989-12-25 Inverter device Expired - Lifetime JP2735912B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1335562A JP2735912B2 (en) 1989-12-25 1989-12-25 Inverter device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1335562A JP2735912B2 (en) 1989-12-25 1989-12-25 Inverter device

Publications (2)

Publication Number Publication Date
JPH03195053A true JPH03195053A (en) 1991-08-26
JP2735912B2 JP2735912B2 (en) 1998-04-02

Family

ID=18289969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1335562A Expired - Lifetime JP2735912B2 (en) 1989-12-25 1989-12-25 Inverter device

Country Status (1)

Country Link
JP (1) JP2735912B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0679174U (en) * 1993-04-09 1994-11-04 東洋電機製造株式会社 Inverter printed wiring board
WO1998010508A1 (en) * 1996-09-06 1998-03-12 Hitachi, Ltd. Semiconductor device
KR100419051B1 (en) * 1999-02-25 2004-02-19 가부시끼가이샤 히다치 세이사꾸쇼 Semiconductor device
JP2010068658A (en) * 2008-09-11 2010-03-25 Denso Corp Power converter
JP2010193713A (en) * 2010-05-31 2010-09-02 Hitachi Automotive Systems Ltd Power converter and moving body including power converter
JPWO2013179638A1 (en) * 2012-05-29 2016-01-18 日本精工株式会社 Semiconductor module and manufacturing method thereof
WO2016194033A1 (en) * 2015-05-29 2016-12-08 新電元工業株式会社 Semiconductor device and method for manufacturing same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5278490B2 (en) * 2011-05-10 2013-09-04 株式会社デンソー Power converter

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0679174U (en) * 1993-04-09 1994-11-04 東洋電機製造株式会社 Inverter printed wiring board
WO1998010508A1 (en) * 1996-09-06 1998-03-12 Hitachi, Ltd. Semiconductor device
KR100419051B1 (en) * 1999-02-25 2004-02-19 가부시끼가이샤 히다치 세이사꾸쇼 Semiconductor device
JP2010068658A (en) * 2008-09-11 2010-03-25 Denso Corp Power converter
JP2010193713A (en) * 2010-05-31 2010-09-02 Hitachi Automotive Systems Ltd Power converter and moving body including power converter
JPWO2013179638A1 (en) * 2012-05-29 2016-01-18 日本精工株式会社 Semiconductor module and manufacturing method thereof
US9312234B2 (en) 2012-05-29 2016-04-12 Nsk Ltd. Semiconductor module and method for manufacturing the same
WO2016194033A1 (en) * 2015-05-29 2016-12-08 新電元工業株式会社 Semiconductor device and method for manufacturing same
JP6062565B1 (en) * 2015-05-29 2017-01-18 新電元工業株式会社 Semiconductor device and manufacturing method thereof
US9673143B2 (en) 2015-05-29 2017-06-06 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device and manufacturing method of the same

Also Published As

Publication number Publication date
JP2735912B2 (en) 1998-04-02

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