JP2001267486A - Semiconductor device and semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a monolithic microwave integrated circuit for reduced cost of a semiconductor module mounted with the semiconductor device. SOLUTION: A semiconductor device 1 is provided which comprises a transistor element part comprising at least one transistor and a wiring part comprising a wiring connected to the transistor, which constitutes a microwave integrated circuit. At least one transistor constituting the transistor element is formed as an IC chip 3 while the wiring part is formed as a wiring board 2 where the wiring 5 is provided to an insulating board 4. The IC chip 3 is fitted to the wiring board 2, thus connecting at least one transistor to the wiring.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device and a semiconductor module having the same mounted thereon, and more particularly, to a semiconductor device having a monolithic microwave integrated circuit and a semiconductor module having the same mounted thereon.

[0002]

2. Description of the Related Art FIG. 4 is a sectional view schematically showing an example of a conventional semiconductor package having a monolithic microwave integrated circuit. As shown in FIG. 4, a conventional semiconductor package 101 has a structure in which a GaAs chip 103 is flip-chip connected to a substrate 102 and a resin 104 is potted.

In this semiconductor package 101, G
The aAs chip 103 forms a monolithic microwave integrated circuit. That is, in the conventional semiconductor package 101, both the transistor element portion and the wiring portion are formed in one GaAs chip 103. In the semiconductor package 101 shown in FIG. 4, the GaAs chip 103 is arranged such that the surface on which the transistors and the strip lines are formed faces the substrate 102.

In manufacturing the above-mentioned GaAs chip 103, a very expensive GaAs substrate is used. Therefore, it is desired for monolithic microwave integrated circuits to effectively utilize a GaAs substrate, that is, to reduce the cost by improving the manufacturing yield. However, in a monolithic microwave integrated circuit, the accuracy of wiring formation has a very large effect on device characteristics. Therefore, there is a limit to cost reduction by improving the manufacturing yield. Therefore, it is desired to reduce the cost by another method.

[0005]

A semiconductor module using a conventional semiconductor package 101 as shown in FIG. 4 has the following problems. A semiconductor module using the semiconductor package 101 shown in FIG. 4 is obtained by mounting the semiconductor package 101 on a mounting board on the substrate 102 side. Therefore, the heat radiation generated by the microwave integrated circuit is prevented from
It is necessary to separately provide a heat sink on the As chip 103. Such attachment of the heat sink naturally increases the number of components and the manufacturing process.

Further, the semiconductor package 10 shown in FIG.
1 is a GaAs chip 10
Since the grounding needs to be performed via the via hole provided in the third hole, a reactance component corresponding to the thickness is generated. As is well known, this reactance component has a problem that it narrows the band characteristics of the device and also causes oscillation.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to reduce the cost of a semiconductor device having a monolithic microwave integrated circuit and a semiconductor module on which such a semiconductor device is mounted. I do.

[0008]

According to a first aspect of the present invention, there is provided a microwave integrated circuit comprising: a transistor element portion including at least one transistor; and a wiring portion having a wiring connected to the transistor. A semiconductor device forming a circuit, wherein each of the at least one transistor forming the transistor element portion is an IC
The wiring portion is formed as a chip, and the wiring portion is formed as a wiring substrate formed by providing the wiring on an insulating substrate, and the IC chip is attached to the wiring substrate, whereby connection between the at least one transistor and the wiring is established. There is provided a semiconductor device characterized by the above.

According to a second aspect of the present invention, there is provided a wiring board including an insulating substrate and a wiring formed on one main surface of the insulating substrate, and a transistor formed on one main surface, wherein a transistor is formed. IC constituting microwave integrated circuit
A semiconductor device comprising a chip, wherein the IC chip is attached to the wiring substrate so as to face the wiring substrate on a surface on which the transistor is formed, and is configured to be mounted on the IC chip side. A semiconductor device is provided.

According to a third aspect of the present invention, there is provided a semiconductor module including a mounting substrate and a semiconductor device mounted on the mounting substrate to form a microwave integrated circuit, wherein the semiconductor device includes at least one semiconductor device. A transistor element portion composed of two transistors and the at least one
A wiring portion having a wiring connected to one of the transistors, wherein the at least one transistor constituting the transistor element portion is formed as an IC chip, and the wiring portion is a wiring formed by providing the wiring on an insulating substrate. A semiconductor module is provided, formed as a substrate, wherein the IC chip is attached to the wiring substrate, whereby the at least one transistor is connected to the wiring.

According to a fourth aspect of the present invention, there is provided a semiconductor module including a mounting substrate and a semiconductor device mounted on the mounting substrate and having a microwave integrated circuit, wherein the semiconductor device includes an insulating substrate. A wiring board having a conductive pattern formed on one main surface of the insulating substrate and an IC chip on which a transistor is formed on one main surface to constitute the microwave integrated circuit, wherein the IC chip is the transistor Wherein the semiconductor device is mounted on the mounting board such that the IC chip faces the mounting board so that the surface on which the IC chip is formed faces the wiring board. Modules are provided.

As described above, conventionally, a monolithic microwave integrated circuit has been constructed by forming both a transistor element portion and a wiring portion on one GaAs chip.

On the other hand, according to the first and third aspects of the present invention, each transistor constituting the transistor element portion is formed as a separate IC chip, and the wiring portion is formed by providing a wiring on an insulating substrate. A monolithic microwave integrated circuit is formed by a package formed as a substrate and obtained by attaching these IC chips to a wiring substrate. When a monolithic microwave integrated circuit is constructed in such a manner, a dielectric substrate such as a GaAs substrate can be used only for forming a transistor, so that more microwave integrated circuits can be formed from one GaAs substrate. Obtainable.

Further, according to the first and third aspects of the present invention, the wiring is formed not on the dielectric substrate but on the insulating substrate. Therefore, even if a problem occurs in the wiring, a dielectric substrate such as a GaAs substrate is not wasted. In general, an insulating substrate is much cheaper than a GaAs substrate. Therefore, according to the first and third aspects of the present invention, it is possible to suppress an increase in cost due to a wiring defect. That is, according to the first and third aspects of the present invention, it is possible to reduce the cost of a semiconductor device having a microwave integrated circuit and a semiconductor module on which such a semiconductor device is mounted.

In the second and fourth aspects of the present invention, the IC chip is mounted on the wiring substrate such that the surface on which the transistor is formed faces the wiring substrate, and the semiconductor substrate is mounted on the side on which the IC chip is mounted. Is mounted on the mounting board. Therefore, according to the second and fourth aspects of the present invention, heat generated in the IC chip can be radiated from the mounting substrate side. For example, an insulating substrate and a first insulating substrate formed on a surface of the insulating substrate on which the semiconductor substrate is mounted.
And a second metal pattern, the first metal pattern is connected to the wiring, and the second metal pattern is connected to the back surface of the surface of the IC chip where the transistors are formed. The heat generated in the chip can be radiated to the second metal pattern. When heat is dissipated on the mounting substrate side in this manner, it is not necessary to separately provide a heat sink on the surface of the semiconductor substrate opposite to the mounting substrate.
Further, the mounting board having the above-described structure can be manufactured by the same process as a general mounting board. Therefore, according to the second and fourth aspects of the present invention, the structure and the manufacturing process can be simplified.

Further, in the second and fourth aspects of the present invention, since the IC chip is mounted on the wiring board such that the back surface of the surface on which the transistors are formed faces the mounting substrate, the IC chip is previously mounted on the mounting substrate. If a metal pattern is formed as above, grounding can be performed without providing a via hole in the IC chip. Therefore, the problem related to the reactance component can be avoided.

When the IC chip is mounted on the wiring board so that the surface on which the transistor is formed faces the wiring board, and the semiconductor substrate is mounted on the mounting board on the side where the IC chip is mounted, It is preferable to have a conductor pattern constituting the wiring and an electrode connected to the conductor pattern, and the electrode is formed so as to extend in a direction away from the surface including the conductor pattern on the IC chip side. When a wiring board having such a structure is used, when the semiconductor substrate is mounted on the mounting board, wire bonding or the like becomes unnecessary. Therefore, the semiconductor substrate can be mounted on the mounting substrate more easily and more reliably.

When the heat generated in the IC chip is radiated by the above-described method, a first insulator layer, a metal layer, and a second insulator layer provided with through holes are sequentially laminated as the insulating substrate. A through-hole of the second insulator layer is filled with a connecting conductor, and the first and second metal patterns described above are formed on the second insulator layer. A metal pattern and a metal layer connected via a connecting conductor can be used. In this insulating substrate, heat generated in the IC chip is radiated to the metal layer via the second metal pattern and the connection conductor. Since this metal layer is provided in a plane different from the first and second metal patterns, it can have a larger area than the second metal pattern. Therefore, when the heat generated in the IC chip is radiated to the metal layer, the heat generated in the IC chip is simply transferred to the second layer.
As compared with the case where heat is dissipated to the metal pattern, more excellent heat dissipation can be realized.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in more detail with reference to the drawings. In each of the drawings, the same components are denoted by the same reference numerals, and redundant description will be omitted.

FIGS. 1A and 1B are perspective views schematically showing a semiconductor device according to an embodiment of the present invention.
FIG. 2C is a cross-sectional view of the semiconductor device shown in FIGS. The semiconductor device shown in FIGS. 1A to 1C is a semiconductor package 1 mainly including a leadless chip carrier 2 as a wiring substrate and a GaAs chip 3.
It constitutes a microwave integrated circuit.

In the leadless chip carrier 2, a conductor pattern 5 (omitted in FIGS. 1A and 1B) and a frame-shaped insulating member 6 are sequentially arranged on a flat insulating substrate 4. It has a structure. A plurality of grooves are provided on the end surfaces of the insulating substrate 4 and the insulating member 6 in a direction perpendicular to their main surfaces, and the ends of the conductor pattern 5 are connected to the electrodes 7 in these grooves. That is, the electrode 7 in the groove constitutes an electric signal terminal and a power supply terminal for the GaAs chip 3.

The leadless chip carriers 2 shown in FIGS. 1A to 1C are obtained by integrally forming a plurality of leadless chip carriers 2 and then cutting them into individual leadless chip carriers 2. Can be. That is, the plurality of grooves formed on the sides of the insulating substrate 4 and the insulating member 6 provide through holes in the insulating substrate 4 and the insulating member 6, and the insulating substrate 4 is located at the positions of the through holes.
And by dividing the insulating member 6. Similarly, the electrode 7 is formed by filling a through-hole provided in the insulating substrate 4 and the insulating member 6 with a conductive material such as a metal, and then, at the position of the through-hole, the insulating substrate 4 and the insulating member 6. Can be formed by dividing. Therefore, these grooves and the electrode 7 are called an end face through-hole and an end face through-hole electrode, respectively.

The material used for the insulating substrate 4 and the insulating member 6 constituting the leadless chip carrier 2 is not particularly limited as long as it is an insulating material, but alumina and glass ceramic are preferred. In particular, when used at a high frequency, it is effective to use glass ceramic for the insulating substrate 4 and the insulating member 6.

The conductor pattern 5 forms a wiring for the GaAs chip 3. The material used for the conductor pattern 5 is not particularly limited as long as it is a conductive material, but a metal material such as copper is generally used. The material used for the electrode 7 is not particularly limited as long as it is a conductive material.
Generally, a metal material such as gold (Au) is used.

In the semiconductor package 1 shown in FIGS. 1A to 1C, each of the GaAs chips 3 constitutes one transistor. The transistor is GaAs
It is formed on one surface area of the chip 3 and various electrodes (not shown) are all provided on that surface. Metal bumps 8 such as gold balls or solder balls are provided on these electrodes, and the GaAs chip 3 is mounted on the leadless chip carrier 2 such that the metal bumps 8 and the conductor patterns 5 are in contact with each other. That is, GaA
The s chip 3 is flip-chip connected to the leadless chip carrier 2.

The periphery of the GaAs chip 3 flip-chip connected to the leadless chip carrier 2 is filled with an insulating material 9 such as a resin. Thereby, when the semiconductor package 1 is mounted on a mounting board described later,
It is possible to prevent the GaAs chip 3 from being broken by a stress generated based on a difference in thermal expansion coefficient between the mounting substrate, the GaAs chip 3 and the leadless chip carrier 2.

The semiconductor package 1 described above is, for example,
It can be manufactured by the following method. FIG.
This will be described with reference to FIG. FIGS. 2A to 2E
3A to 3C are diagrams schematically illustrating a method of manufacturing the semiconductor package 1 illustrated in FIGS. Note that FIG.
FIGS. 2A to 2C are perspective views, and FIGS.
Is a sectional view. In FIG. 2C, the conductor pattern 5 and the electrode 7 are omitted.

In manufacturing the semiconductor package 1 shown in FIGS. 1A to 1C, first, as shown in FIG. 2A, a plurality of transistors are formed on one surface of a GaAs substrate 10 and these transistors are formed. Metal bump 8 on transistor electrode
Is provided. Next, as shown in FIG. 2B, a plurality of GaAs chips 3 are obtained by cutting the GaAs substrate 10 for each transistor.

On the other hand, as shown in FIG. 2C, a plurality of leadless chip carriers 2 are formed before cutting them into individual leadless chip carriers 2. In addition, a plurality of GaAs obtained by the method described above
The chip 3 is flip-chip connected, and further cut into each leadless chip carrier 2 to obtain the structure shown in FIG. Then, as shown in FIG.
The gap between the aAs chip 3 and the leadless chip carrier 2 is potted with an insulating material 9 such as a resin. As described above, the semiconductor package 1 shown in FIGS. 1A to 1C is obtained.

The flip chip connection of the GaAs chip 3 to the leadless chip carrier 2 may be performed collectively for the leadless chip carrier 2 before cutting, or for the leadless chip carrier 2 after cutting. It may be performed for each. Similarly, potting with the insulating material 9 may be performed collectively on a plurality of leadless chip carriers 2 before cutting.
The process may be performed on each of the leadless chip carriers 2 that have been cut out.

In the semiconductor package 1 described above,
Each transistor is formed as a separate GaAs chip 3, and its wiring is made by the conductor pattern 5 of the wiring board 2. That is, in the semiconductor package 1, the GaAs substrate 10 is used for forming only the transistor. Therefore, a larger number of microwave integrated circuits can be obtained from one GaAs substrate 10, and even if a failure occurs in the wiring, GaAs can be obtained.
The substrate is not wasted. Therefore, cost can be reduced.

The above-described semiconductor package 1 may be mounted on a mounting substrate on the insulating substrate 4 side.
The GaAs chip 3 is mounted on a mounting substrate. This will be described with reference to FIG.

FIG. 3 is a sectional view schematically showing an example of a semiconductor module using the semiconductor package 1 shown in FIGS. 1 (a) to 1 (c). Semiconductor module 11 shown in FIG.
Is mainly composed of the mounting substrate 12 and the semiconductor module 1.

The mounting substrate 12 has a structure in which a conductive layer 14, an insulating layer 15, and a conductive layer 16 are sequentially laminated on an insulating layer 13. The conductive layer 16 is patterned, and forms a wiring 17 and a connecting portion 18 for heat radiation.
In addition, a via hole is formed in the insulating layer 15. These via holes are filled with a conductive material 19,
The connection part 18 is connected to the conductive layer 14 via a conductive material 19. The mounting substrate 12 is not limited to such a structure. For example, the insulating layer 15 and the conductive layer 16
And a laminated body, or a laminate of more insulating layers and conductive layers.

The material used for the insulating layers 13 and 15 constituting the mounting board is not particularly limited as long as it is an insulating material. For the insulating layers 13 and 15, for example, a composite material such as a so-called prepreg in which a glass cloth is impregnated with an epoxy resin and is in a B-stage state can be used.

The material used for the conductive layers 14 and 16 is not particularly limited as long as it is a conductive material, and examples thereof include metals such as copper. In addition, the connection portion 18 and the conductive layer 14
For example, a metal material such as solder can be used as the conductive material 19 for connecting the first and second electrodes.

The semiconductor package 1 is arranged on the mounting substrate 12 configured as described above such that the back surface of the surface of the GaAs chip 3 on which the transistors are formed is located on the connection portion 18. The back surface of the surface of the GaAs chip 3 on which the transistors are formed is connected to the connection portion 18 via the conductive material 20, and the leadless chip carrier 2
The electrode 7 is connected to the wiring 17 via the conductive material 21. In addition, as the conductive materials 20 and 21, a metal material such as solder or silver paste can be used.

As described above, the semiconductor package 1 shown in FIGS. 1A to 1C is mounted on the mounting substrate 12 on the GaAs chip 3 side.
In this case, since the heat generated in the GaAs chip 3 can be radiated to the connecting portion 18 on the mounting substrate 12 or the like, there is no need to separately provide a heat sink. The mounting board 12 having the above-described structure can be manufactured by the same process as a general mounting board. Therefore, FIGS.
When the semiconductor package 1 shown in (c) is mounted on the mounting substrate 12 on the GaAs chip 3 side, the semiconductor module 11
Can be simplified, and the manufacturing process can be simplified.

In this semiconductor module 11, the GaAs chip 3 is grounded without providing a via hole in the GaAs chip 3 because the back surface of the surface on which the transistors are formed is connected to the connection portion 18 of the mounting substrate 12. be able to. Therefore, the problem related to the reactance component can be avoided.

In the embodiment described above, the semiconductor package 1 is mounted on the mounting substrate 12 on the GaAs chip 3 side. However, the semiconductor chip 1 may be mounted on the mounting substrate 12 on the insulating substrate 4 side. . In this case, it is necessary to separately provide a heat sink in order to realize good heat dissipation. However, each transistor is formed as a separate GaAs chip 3, and their connection is performed by the conductor pattern 5 provided on the wiring board 2. The effects described in connection with performing can be obtained. That is, the cost can be reduced by effectively utilizing the GaAs substrate.

In the embodiment described above, when the semiconductor package 1 forms a monolithic microwave integrated circuit, that is, each transistor is formed of a separate GaAs.
Although it has been described that the chip 3 is formed and the connection thereof is performed by the conductor pattern 5 provided on the wiring substrate 2, the GaAs constituting the monolithic microwave integrated circuit is described.
A semiconductor package may be formed using an s chip.
In this case, it is necessary to form not only transistors but also wirings on the GaAs chip.
The effect described in relation to mounting on the mounting substrate 12 on the aAs chip 3 side can be obtained. That is, the structure and the manufacturing process can be simplified, and the cost can be reduced.

[0042]

As described above, according to the present invention,
Forming each transistor constituting the transistor element portion as a separate IC chip, and forming the wiring portion as a wiring board having wiring provided on an insulating substrate;
The C chip is mounted on the wiring board such that the surface on which the transistor is formed faces the wiring board, and the semiconductor substrate is mounted on the mounting board on the side where the IC chip is mounted, or either of them is performed. . for that reason,
It is possible to effectively use an expensive dielectric substrate such as a GaAs substrate, and to simplify the structure and the manufacturing process.

That is, according to the present invention, it is possible to reduce the cost of a semiconductor device having a monolithic microwave integrated circuit and a semiconductor module on which such a semiconductor device is mounted.

[Brief description of the drawings]

FIGS. 1A and 1B are perspective views schematically showing a semiconductor device according to an embodiment of the present invention, and FIG. 1C is a cross-sectional view of the semiconductor device shown in FIGS.

FIGS. 2A to 2E are FIGS. 1A to 1E, respectively.
The figure which shows schematically the manufacturing method of the semiconductor device shown to (c).

FIG. 3 is a sectional view schematically showing an example of a semiconductor module using the semiconductor device shown in FIGS. 1 (a) to 1 (c).

FIG. 4 is a sectional view schematically showing an example of a conventional semiconductor package having a monolithic microwave integrated circuit.

[Explanation of symbols]

 1, 101 semiconductor package 2 leadless chip carrier 3, 103 GaAs chip 4 insulating substrate 5 conductor pattern 6 insulating member 7 electrode 8 metal bump 9 insulating material 10 GaAs substrate 11 Semiconductor module 12 ... Mounting board 13,15 ... Insulating layer 14,16 ... Conducting layer 17 ... Wiring 18 ... Connecting portion 19-21 ... Conductive material 102 ... Substrate 104 ... Resin

Claims (13)

[Claims] 1. A semiconductor device comprising a transistor element portion including at least one transistor and a wiring portion having a wiring connected to the transistor, the semiconductor device constituting a microwave integrated circuit, wherein the transistor element portion Wherein the at least one transistor is formed as an IC chip,
The wiring portion is formed as a wiring substrate formed by providing the wiring on an insulating substrate, and the IC chip is attached to the wiring substrate, thereby connecting the at least one transistor to the wiring. Semiconductor device. 2. The semiconductor according to claim 1, wherein the IC chip is mounted on the wiring board such that a surface on which the transistor is formed faces the wiring board and a back surface thereof is exposed. apparatus. 3. A wiring board having an insulating substrate and wiring formed on one main surface of the insulating substrate, and an IC chip having transistors formed on one main surface and constituting a monolithic microwave integrated circuit. A semiconductor device provided with the IC chip, wherein the IC chip is attached to the wiring substrate so as to face the wiring substrate on a surface on which the transistor is formed, and is configured to be mounted on the IC chip side. Characteristic semiconductor device. 4. A frame-shaped member provided with a conductor pattern as the wiring, laminated on a surface provided with the conductor pattern, and an electrode formed on a side surface of the frame-shaped member and connected to the conductor pattern. Comprising the said IC
The semiconductor device according to claim 2, wherein the semiconductor device is configured to be mounted on a chip side. 5. The semiconductor device according to claim 2, wherein a gap between said IC chip and said wiring board is filled with a resin. 6. A semiconductor module, comprising: a mounting substrate; and a semiconductor device mounted on the mounting substrate to form a microwave integrated circuit, wherein the semiconductor device includes a transistor element unit including at least one transistor. A wiring portion having a wiring connected to the at least one transistor;
The at least one transistor constituting the transistor element portion is formed as an IC chip,
The wiring portion is formed as a wiring substrate formed by providing the wiring on an insulating substrate, and the IC chip is attached to the wiring substrate, whereby the connection between the at least one transistor and the wiring is made. Characteristic semiconductor module. 7. The semiconductor according to claim 6, wherein the IC chip is mounted on the wiring board such that a surface on which the transistor is formed faces the wiring board and a back surface thereof is exposed. module. 8. The semiconductor module according to claim 7, wherein said semiconductor substrate is mounted on said mounting substrate on a side where said IC chip is mounted. 9. The mounting substrate, comprising: an insulating substrate; and first and second metal patterns formed on a surface of the insulating substrate on which the semiconductor substrate is mounted, respectively. 9. The semiconductor module according to claim 8, wherein a pattern is connected to the wiring, and the second metal pattern is connected to a back surface of the GaAs chip on which the transistor is formed. 10. The insulating substrate comprises: a first insulator layer;
A second insulating layer having a metal layer and a second insulating layer provided with a through-hole, the second insulating layer including a connecting conductor in the through-hole; And a second metal pattern is formed on the second insulator layer, and the second metal pattern is formed on the second insulator layer.
The semiconductor module according to claim 9, wherein the metal pattern and the metal layer are connected via the connection conductor. 11. A semiconductor module comprising: a mounting substrate; and a semiconductor device mounted on the mounting substrate and having a monolithic microwave integrated circuit, wherein the semiconductor device includes an insulating substrate and one of the insulating substrate. A wiring board having a conductor pattern formed on a surface thereof, and an IC chip having a transistor formed on one main surface to constitute the monolithic microwave integrated circuit, wherein the IC chip has a wiring on a surface on which the transistor is formed. A semiconductor module which is attached to the wiring board so as to face a substrate, and wherein the semiconductor device is mounted on the mounting board such that the IC chip faces the mounting board. 12. The mounting substrate, comprising: an insulating substrate; and first and second metal patterns respectively formed on a surface of the insulating substrate on which the semiconductor substrate is mounted. 12. The semiconductor module according to claim 11, wherein a pattern is connected to the conductor pattern, and the second metal pattern is connected to a back surface of the IC chip on which the transistor is formed. 13. The insulating substrate, comprising: a first insulator layer;
A second insulating layer having a metal layer and a second insulating layer provided with a through-hole, the second insulating layer including a connecting conductor in the through-hole; And a second metal pattern is formed on the second insulator layer, and the second metal pattern is formed on the second insulator layer.
The semiconductor module according to claim 9, wherein the metal pattern and the metal layer are connected via the connection conductor.