JP3831173B2 - Semiconductor module - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor module mounted with the semiconductor equipment, particularly relates to a semiconductor module mounted with the semiconductor equipment having a microwave integrated circuit.
[0002]
[Prior art]
FIG. 4 is a cross-sectional view schematically showing an example of a conventional semiconductor package having a monolithic microwave integrated circuit. As shown in FIG. 4, a conventional semiconductor package 101 has a structure in which a GaAs chip 103 is flip-chip connected to a substrate 102 and a resin 104 is potted.
[0003]
In the semiconductor package 101, the GaAs chip 103 constitutes a monolithic microwave integrated circuit. That is, in the conventional semiconductor package 101, both the transistor element portion and the wiring portion are formed on one GaAs chip 103. In the semiconductor package 101 shown in FIG. 4, the GaAs chip 103 is arranged so that the surface on which the transistors and strip lines are formed faces the substrate 102.
[0004]
A very expensive GaAs substrate is used for manufacturing the GaAs chip 103 described above. For this reason, it is desired for monolithic microwave integrated circuits to effectively use a GaAs substrate, that is, to reduce costs, by improving the manufacturing yield. However, in the monolithic microwave integrated circuit, the accuracy of wiring formation has a great influence on the device characteristics. For this reason, there is a limit to cost reduction by improving the manufacturing yield. Therefore, it is desired to reduce the cost by other methods.
[0005]
[Problems to be solved by the invention]
The semiconductor module using the conventional semiconductor package 101 as shown in FIG. 4 has the following problems.
A semiconductor module using the semiconductor package 101 shown in FIG. 4 is obtained by mounting the semiconductor package 101 on the mounting substrate on the substrate 102 side. Therefore, it is necessary to dissipate heat generated in the microwave integrated circuit by providing a separate heat sink on the GaAs chip 103 of the semiconductor package 101. As a matter of course, such a heat sink is provided with an increase in the number of parts and the manufacturing process.
[0006]
Further, in the semiconductor module using the semiconductor package 101 shown in FIG. 4, since it is necessary to perform grounding through a via hole provided in the GaAs chip 103, a reactance component corresponding to the thickness is generated. As is well known, this reactance component has a problem of narrowing the band characteristics of the device and causing oscillation.
[0007]
The present invention has been made in view of the above problems, and an object thereof is to enable reducing the cost of the semiconductor module mounted with the semiconductor equipment having a monolithic microwave integrated circuit.
[0010]
[Means for Solving the Problems]
According to a first aspect of the present invention , there is provided a semiconductor module comprising a mounting substrate and a semiconductor device mounted on the mounting substrate and constituting a microwave integrated circuit, wherein the semiconductor device is configured by at least one transistor. Each of the at least one transistor constituting the transistor element unit is formed as a chip including only one transistor, and a transistor unit and a wiring unit having a wiring connected to the at least one transistor. The wiring portion is formed as a wiring substrate in which the wiring is provided on an insulating substrate, and the chip is attached to the wiring substrate so that the surface on which the transistor is formed is opposed to the wiring substrate and the back surface is exposed. So that the at least one transistor is not connected to the wiring. And, wherein the semiconductor device is mounted on the mounting substrate on the side where the chip is mounted, wherein the mounting board, the respectively formed on a surface of mounting an insulating substrate, the semiconductor device of the insulating substrate 1 and a second metal pattern, wherein the first metal pattern is connected to the wiring, and the second metal pattern is connected to the back surface of the surface of the chip on which the transistor is formed . A semiconductor module is provided.
[0011]
According to a second aspect of the present invention , there is provided a semiconductor module comprising a mounting substrate and a semiconductor device mounted on the mounting substrate and having a monolithic microwave integrated circuit, the semiconductor device including an insulating substrate and the insulating property. A wiring board having a conductor pattern formed on one main surface of the substrate; and an IC chip that forms the monolithic microwave integrated circuit with a transistor formed on one main surface, wherein the transistor is formed on the IC chip. The semiconductor device is mounted on the mounting substrate so that the IC chip faces the mounting substrate, and the mounting substrate is connected to the insulating substrate. A first metal pattern and a second metal pattern formed on a surface of the insulating substrate on which the semiconductor device is mounted, 1 metal pattern is connected to the conductor pattern, the second metal pattern is a semiconductor module, characterized in that connected to the rear face of the front face the transistor of the IC chip is formed is provided.
[0012]
As described above, conventionally, a monolithic microwave integrated circuit is configured by forming both the transistor element portion and the wiring portion on one GaAs chip.
[0013]
On the other hand, according to the first aspect of the present invention, each transistor constituting the transistor element portion is formed as a separate chip, and the wiring portion is formed as a wiring substrate in which wiring is provided on an insulating substrate. A microwave integrated circuit is constituted by a package obtained by attaching the circuit board to the wiring board. When a monolithic microwave integrated circuit is configured in this way, a substrate such as a GaAs substrate can be used only for forming a transistor, so that more microwave integrated circuits can be obtained from one GaAs substrate. Can do.
[0014]
According to the first aspect of the present invention, the wiring is formed on the insulating substrate. Therefore, even if a defect occurs in the wiring, a substrate such as a GaAs substrate is not wasted. In general, an insulating substrate is much cheaper than a GaAs substrate. Therefore, according to the first aspect of the present invention, it is possible to suppress an increase in cost due to a wiring defect. That is, according to the first aspect of the present invention, it is possible to reduce the cost of a semiconductor device having a microwave integrated circuit and a semiconductor module mounted with such a semiconductor device.
[0015]
In the second aspect of the present invention, the IC chip is mounted on the wiring board so that the surface on which the transistor is formed faces the wiring board, and the semiconductor device is mounted on the mounting board on the side on which the IC chip is mounted. The Therefore, according to the second aspect of the present invention, heat generated in the IC chip can be radiated from the mounting substrate side. In the second aspect , a mounting substrate having an insulating substrate and first and second metal patterns respectively formed on a surface of the insulating substrate on which the semiconductor device is mounted is used, and the first metal pattern is formed as described above. Since it is connected to the wiring and the second metal pattern is connected to the back surface of the surface of the IC chip where the transistor is formed, the heat generated in the IC chip can be dissipated to the second metal pattern. When heat is radiated on the mounting substrate side as described above, it is not necessary to separately provide a heat sink on the surface opposite to the mounting substrate of the semiconductor device. In addition, the mounting board having the above-described structure can be manufactured by the same process as a general mounting board. Therefore, according to the second aspect of the present invention, the structure and the manufacturing process can be simplified.
[0016]
Furthermore, in the second aspect of the present invention, the IC chip is attached to the wiring board so that the back surface of the surface on which the transistor is formed is opposed to the mounting board. In this case, grounding can be performed without providing a via hole in the IC chip. Thus, problems associated with reactance components can be avoided.
[0017]
When the IC chip is attached to the wiring board so that the surface on which the transistor is formed faces the wiring board, and the semiconductor device is mounted on the mounting board on the side where the IC chip is attached, the wiring board It is preferable that the conductive pattern has a conductive pattern and an electrode connected to the conductive pattern, and the electrode extends in a direction away from the surface including the conductive pattern on the IC chip side. When the wiring board having such a structure is used, wire bonding or the like is not required when the semiconductor device is mounted on the mounting board. Therefore, the semiconductor device can be mounted on the mounting substrate more easily and more reliably.
[0018]
When the heat generated in the IC chip is radiated by the above-described method, the first insulating layer, the metal layer, and the second insulating layer provided with a through hole are sequentially stacked as the insulating substrate. A through-hole of the second insulator layer is filled with a connecting conductor, and the first and second metal patterns described above are formed on the second insulator layer, and the second metal pattern and What connected with the metal layer via the conductor for a connection can be used. In this insulating substrate, the heat generated in the IC chip is dissipated to the metal layer through the second metal pattern and the connecting conductor. Since this metal layer is provided in a different plane from the first and second metal patterns, it can have a larger area than the second metal pattern. Therefore, when the heat generated in the IC chip is radiated to the metal layer, better heat dissipation can be realized as compared with the case where the heat generated in the IC chip is simply radiated to the second metal pattern.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described in more detail with reference to the drawings. In each figure, the same constituent members are denoted by the same reference numerals, and redundant description is omitted.
[0020]
1A and 1B are perspective views schematically showing a semiconductor device according to an embodiment of the present invention, and FIG. 1C is a view of the semiconductor device shown in FIGS. 1A and 1B. It is sectional drawing. A semiconductor device shown in FIGS. 1A to 1C is a semiconductor package 1 mainly composed of a leadless chip carrier 2 and a GaAs chip 3 which are wiring boards, and constitutes a microwave integrated circuit. .
[0021]
The leadless chip carrier 2 has a structure in which a conductor pattern 5 (omitted in FIGS. 1A and 1B) and a frame-like insulating member 6 are sequentially arranged on a flat insulating substrate 4. Have. The end surfaces of the insulating substrate 4 and the insulating member 6 are provided with a plurality of groove portions in the direction perpendicular to the main surfaces, and the end portions of the conductor pattern 5 are connected to the electrodes 7 in these groove portions. That is, the electrode 7 in the groove constitutes an electric signal terminal and a power supply terminal for the GaAs chip 3.
[0022]
The leadless chip carrier 2 shown in FIGS. 1A to 1C can be obtained by integrally forming a plurality of leadless chip carriers 2 and then cutting them out into individual leadless chip carriers 2. That is, the plurality of grooves formed in the side portions of the insulating substrate 4 and the insulating member 6 are provided with through holes in the insulating substrate 4 and the insulating member 6, and the insulating substrate 4 and the insulating member are insulated at the positions of the through holes. It can be formed by dividing the sex member 6. Similarly, the electrode 7 is formed by filling the through holes provided in the insulating substrate 4 and the insulating member 6 with a conductive material such as metal, and then insulating the insulating substrate 4 and the insulating member 6 at the positions of the through holes. It can form by dividing | segmenting. Therefore, the groove and the electrode 7 are called an end face through hole and an end face through hole electrode, respectively.
[0023]
The material used for the insulating substrate 4 and the insulating member 6 constituting the leadless chip carrier 2 is not particularly limited as long as it is an insulating material, but alumina, glass ceramics, and the like are preferable. In particular, when used at a high frequency, it is effective to use glass ceramics for the insulating substrate 4 and the insulating member 6.
[0024]
The conductor pattern 5 constitutes a wiring for the GaAs chip 3. Although there will be no restriction | limiting in particular if the material used for the conductor pattern 5 is an electroconductive material, Generally, metal materials, such as copper, are used. Further, the material used for the electrode 7 is not particularly limited as long as it is a conductive material, and generally a metal material such as gold (Au) is used.
[0025]
In the semiconductor package 1 shown in FIGS. 1A to 1C, each GaAs chip 3 constitutes one transistor. The transistor is formed on one surface region of the GaAs chip 3, and various electrodes (not shown) are all provided on the surface. Further, metal bumps 8 such as gold balls or solder balls are provided on these electrodes, and the GaAs chip 3 is attached to the leadless chip carrier 2 so that the metal bumps 8 and the conductor pattern 5 are in contact with each other. That is, the GaAs chip 3 is flip-chip connected to the leadless chip carrier 2.
[0026]
The periphery of the GaAs chip 3 flip-chip connected to the leadless chip carrier 2 is filled with an insulating material 9 such as resin. As a result, when the semiconductor package 1 is mounted on a mounting substrate, which will be described later, the GaAs chip 3 is destroyed by the stress generated based on the difference in thermal expansion coefficient between the mounting substrate, the GaAs chip 3 and the leadless chip carrier 2. Can be suppressed.
[0027]
The semiconductor package 1 described above can be manufactured, for example, by the following method. This will be described with reference to FIGS.
2A to 2E are diagrams schematically showing a method for manufacturing the semiconductor package 1 shown in FIGS. 1A to 1C, respectively. 2A to 2C are perspective views, and FIGS. 2D and 2E are cross-sectional views. Moreover, in FIG.2 (c), the conductor pattern 5 and the electrode 7 are abbreviate | omitted.
[0028]
In manufacturing the semiconductor package 1 shown in FIGS. 1A to 1C, first, as shown in FIG. 2A, a plurality of transistors are formed on one surface of a GaAs substrate 10, and electrodes of these transistors are formed. Metal bumps 8 are provided on the top. Next, as shown in FIG. 2B, the GaAs substrate 10 is cut for each transistor to obtain a plurality of GaAs chips 3.
[0029]
On the other hand, as shown in FIG. 2C, a plurality of leadless chip carriers 2 are formed up to a state before being cut into individual leadless chip carriers 2. A plurality of GaAs chips 3 obtained by the above-described method are flip-chip connected to this and further cut for each leadless chip carrier 2 to obtain the structure shown in FIG. Thereafter, as shown in FIG. 2E, the gap between the GaAs chip 3 and the leadless chip carrier 2 is potted with an insulating material 9 such as a resin. As described above, the semiconductor package 1 shown in FIGS. 1A to 1C is obtained.
[0030]
Note that the flip chip connection of the GaAs chip 3 to the leadless chip carrier 2 may be performed collectively with respect to the leadless chip carrier 2 before being cut out, and for each of the leadless chip carriers 2 after being cut out. You may go. Similarly, the potting with the insulating material 9 may be performed collectively for a plurality of leadless chip carriers 2 before cutting, or for each of the leadless chip carriers 2 after cutting. Also good.
[0031]
In the semiconductor package 1 described above, each transistor is formed as a separate GaAs chip 3, and the wiring is made by the conductor pattern 5 of the wiring substrate 2. That is, in the semiconductor package 1, the GaAs substrate 10 is used to form only transistors. Therefore, a larger number of microwave integrated circuits can be obtained from one GaAs substrate 10, and the GaAs substrate is not wasted even if a defect occurs in the wiring. Therefore, cost can be reduced.
[0032]
The semiconductor package 1 described above may be mounted on the mounting substrate on the insulating substrate 4 side, but is preferably mounted on the mounting substrate on the GaAs chip 3 side. This will be described with reference to FIG.
[0033]
FIG. 3 is a cross-sectional view schematically showing an example of a semiconductor module using the semiconductor package 1 shown in FIGS. A semiconductor module 11 shown in FIG. 3 mainly includes a mounting substrate 12 and the semiconductor module 1.
[0034]
The mounting substrate 12 has a structure in which a conductive layer 14, an insulating layer 15, and a conductive layer 16 are sequentially stacked on an insulating layer 13. The conductive layer 16 is patterned and constitutes a wiring 17 and a connecting portion 18 for heat dissipation. In addition, via holes are formed in the insulating layer 15. These via holes are filled with a conductive material 19, and the connecting portion 18 is connected to the conductive layer 14 through the conductive material 19. The mounting substrate 12 is not limited to such a structure. For example, the insulating layer 15 and the conductive layer 16 may be laminated, or a larger number of insulating layers and conductive layers may be laminated.
[0035]
If the material used for the insulating layers 13 and 15 which comprise a mounting substrate is an insulating material, there will be no restriction | limiting in particular. For the insulating layers 13 and 15, for example, a composite material such as a so-called prepreg in which a glass cloth is impregnated with an epoxy resin to be in a B stage state can be used.
[0036]
The material used for the conductive layers 14 and 16 is not particularly limited as long as it is a conductive material, and examples thereof include a metal such as copper. In addition, as the conductive material 19 that connects the connecting portion 18 and the conductive layer 14, for example, a metal material such as solder can be used.
[0037]
With respect to the mounting substrate 12 configured as described above, the semiconductor package 1 is arranged such that the back surface of the surface on which the transistor of the GaAs chip 3 is formed is located on the connection portion 18. The back surface of the surface of the GaAs chip 3 on which the transistor is formed is connected to the connecting portion 18 via the conductive material 20, and the electrode 7 of the leadless chip carrier 2 is connected to the wiring 17 via the conductive material 21. ing. As the conductive materials 20 and 21, metal materials such as solder and silver paste can be used.
[0038]
As described above, when the semiconductor package 1 shown in FIGS. 1A to 1C is mounted on the mounting substrate 12 on the GaAs chip 3 side, the heat generated in the GaAs chip 3 is transferred to the connecting portion 18 on the mounting substrate side 12 or the like. Therefore, it is not necessary to provide a heat sink separately. Further, the mounting substrate 12 having the above-described structure can be manufactured by the same process as a general mounting substrate. Therefore, when the semiconductor package 1 shown in FIGS. 1A to 1C is mounted on the mounting substrate 12 on the GaAs chip 3 side, the structure of the semiconductor module 11 can be simplified, and the manufacturing process thereof can be reduced. It can be simplified.
[0039]
Further, in this semiconductor module 11, since the back surface of the surface on which the transistor is formed is connected to the connection portion 18 of the mounting substrate 12, the GaAs chip 3 can be grounded without providing a via hole in the GaAs chip 3. . Thus, problems associated with reactance components can be avoided.
[0040]
In the embodiment described above, the semiconductor package 1 is mounted on the mounting substrate 12 on the GaAs chip 3 side. However, the semiconductor chip 1 may be mounted on the mounting substrate 12 on the insulating substrate 4 side. In this case, in order to realize good heat dissipation, it is necessary to provide a heat sink separately. However, each transistor is formed as a separate GaAs chip 3 and the connection is made by the conductor pattern 5 provided on the wiring board 2. The effects described in connection with doing can be obtained. That is, the cost can be reduced by effectively using the GaAs substrate.
[0041]
In the embodiment described above, when the semiconductor package 1 constitutes a microwave integrated circuit , that is, each transistor is formed as a separate GaAs chip 3, and their connection is provided by the conductor pattern 5 provided on the wiring board 2. As described above, the semiconductor package may be formed using a GaAs chip constituting a monolithic microwave integrated circuit. In this case, it is necessary to form not only a transistor but also a wiring on the GaAs chip, but the effect described in connection with mounting the semiconductor package 1 on the mounting substrate 12 on the GaAs chip 3 side can be obtained. That is, the structure and manufacturing process can be simplified to reduce the cost.
[0042]
【The invention's effect】
As described above, according to the present invention, be formed as a wiring board of each of the transistors formed by providing a formed and wiring wiring portion on an insulating substrate as separate chips in the transistor element, the tip implementing a and semiconductor device mounted on the wiring board as a surface which a transistor is formed is opposed to the wiring substrate to the mounting substrate with chips mounted side, and either both of them are performed. Therefore, it is possible to simplify things, structure and manufacturing process to effectively utilize the expensive substrate as a GaAs substrate.
[0043]
That is, according to the present invention, it is possible to reduce the cost of the semiconductor module mounted with the semiconductor equipment having a microwave integrated circuit.
[Brief description of the drawings]
FIGS. 1A and 1B are perspective views schematically showing a semiconductor device according to an embodiment of the present invention, and FIG. 1C is a cross-sectional view of the semiconductor device shown in FIGS.
FIGS. 2A to 2E are diagrams schematically showing a method of manufacturing the semiconductor device shown in FIGS. 1A to 1C, respectively.
3 is a cross-sectional view schematically showing an example of a semiconductor module using the semiconductor device shown in FIGS.
FIG. 4 is a cross-sectional view schematically showing an example of a conventional semiconductor package having a monolithic microwave integrated circuit.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1,101 ... Semiconductor package 2 ... Leadless chip carrier 3,103 ... GaAs chip 4 ... Insulating substrate 5 ... Conductive pattern 6 ... Insulating member 7 ... Electrode 8 ... Metal bump 9 ... Insulating material 10 ... GaAs substrate 11 ... Semiconductor module 12 ... Mounting boards 13, 15 ... Insulating layers 14, 16 ... Conductive layer 17 ... Wiring 18 ... Connection parts 19-21 ... Conductive material 102 ... Substrate 104 ... Resin

Claims (4)

A semiconductor module comprising a mounting substrate and a semiconductor device mounted on the mounting substrate and constituting a microwave integrated circuit,
The semiconductor device includes a transistor element portion including at least one transistor and a wiring portion having a wiring connected to the at least one transistor, and each of the at least one transistor constituting the transistor element portion includes: Formed as a chip including only one transistor, and the wiring portion is formed as a wiring substrate in which the wiring is provided on an insulating substrate;
The chip is attached to the wiring substrate so that the surface on which the transistor is formed is opposed to the wiring substrate and the back surface is exposed , thereby connecting the at least one transistor and the wiring ,
The semiconductor device is mounted on the mounting substrate on the side where the chip is attached,
The mounting substrate includes an insulating substrate, and first and second metal patterns formed on surfaces of the insulating substrate on which the semiconductor device is mounted,
The semiconductor module according to claim 1, wherein the first metal pattern is connected to the wiring, and the second metal pattern is connected to a back surface of a surface of the chip on which the transistor is formed . The insulating substrate has a stacked structure in which a first insulator layer, a metal layer, and a second insulator layer provided with a through hole are sequentially stacked, and the second insulator layer is formed through the through-hole. A connection conductor is provided in the hole, the first and second metal patterns are formed on the second insulator layer, and the second metal pattern and the metal layer are interposed via the connection conductor. The semiconductor module according to claim 1 , wherein the semiconductor modules are connected together. A semiconductor module comprising a mounting substrate and a semiconductor device having a monolithic microwave integrated circuit mounted on the mounting substrate,
The semiconductor device includes a wiring substrate having an insulating substrate and a conductor pattern formed on one main surface of the insulating substrate, and an IC chip that constitutes the monolithic microwave integrated circuit by forming a transistor on one main surface With
The IC chip is attached to the wiring board such that the surface on which the transistor is formed faces the wiring board,
The semiconductor device is mounted on the mounting substrate such that the IC chip faces the mounting substrate,
The mounting substrate includes an insulating substrate, and first and second metal patterns formed on surfaces of the insulating substrate on which the semiconductor device is mounted,
The semiconductor module according to claim 1, wherein the first metal pattern is connected to the conductor pattern, and the second metal pattern is connected to a back surface of the surface of the IC chip on which the transistor is formed. The insulating substrate has a stacked structure in which a first insulator layer, a metal layer, and a second insulator layer provided with a through hole are sequentially stacked, and the second insulator layer is formed through the through-hole. A connection conductor is provided in the hole, the first and second metal patterns are formed on the second insulator layer, and the second metal pattern and the metal layer are interposed via the connection conductor. The semiconductor module according to claim 3 , wherein the semiconductor modules are connected together.

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