JPH03185742A - 半導体装置用ボンディングワイヤー - Google Patents

半導体装置用ボンディングワイヤー

Info

Publication number
JPH03185742A
JPH03185742A JP1325121A JP32512189A JPH03185742A JP H03185742 A JPH03185742 A JP H03185742A JP 1325121 A JP1325121 A JP 1325121A JP 32512189 A JP32512189 A JP 32512189A JP H03185742 A JPH03185742 A JP H03185742A
Authority
JP
Japan
Prior art keywords
wire
bonding
coated
bonding wire
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1325121A
Other languages
English (en)
Inventor
Sukeyuki Kami
上　祐之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP1325121A priority Critical patent/JPH03185742A/ja
Publication of JPH03185742A publication Critical patent/JPH03185742A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/4382—Applying permanent coating, e.g. in-situ coating
    • H01L2224/43822—Dip coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H01L2224/45691—The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/45694—Material with a principal constituent of the material being a liquid not provided for in groups H01L2224/456 - H01L2224/45691
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01066—Dysprosium [Dy]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の素子電極と外部リード部とを接続
するために使用するワイヤボンディング用ワイヤーに関
する。
〔従来の技術〕
従来のワイヤボンディング技術の代表的な方法としては
、熱圧着法が採用されている。この熱圧着法は何も被覆
していない金属線で成るボンディングワイヤーを酸水素
炎又は電気的に溶断し、その際にできるボールを半導体
素子の電極上で押し潰して１５０℃〜３００℃の加熱状
態におがれている半導体素子の電極と外部リード部に接
続するものである。また、近年ボンディング技術の向上
と、高速度化に伴う省力化等により、ボンディングマシ
ンは自動化、高速度化へと変化し、半導体部品の価格低
減と信頼性の向上に重点がおがれている。
〔発明が解決しようとする課題〕
上述した従来のボンディングワイヤーでは前記のように
１５０℃〜３００℃の温度で熱圧着するためにワイヤー
が軟化し、素子電極と外部リード部を接続するワイヤー
のループ形状のたるみを生じてリード部とショートする
などの問題が発生する。更に、半導体素子をモールドす
る場合、ワイヤーが軟化によって変形しショートや断線
の原因となる欠点がある。
本発明はこのような問題点を解決するもので、たるみが
生じてもショート・断線が発生しないボンディング用ワ
イヤーを得ることを目的としている。
〔課題を解決するための手段〕
本発明のボンディングワイヤーは、斯る従来事情に鑑み
、金属線の表面に絶縁性を持ちかつボンディング温度以
上（３５０℃以上）で溶融または蒸発する材料をコーテ
ィングされた構造を有している。
ここでコーテイング膜の厚さは０．５〜１μｍとすると
様々の点で都合がよい。１μｍ以上の厚さでコーディン
グした場合、ボンディング時のワイヤー供結等によるソ
ールとボンディングワイヤーの接触により、ツールの開
口部分にワイヤーから剥れたコーテイング膜の一部がつ
まる可能性がある。０．５μｍ以下では＝１−ティング
膜を均一にワイヤー表面にコーティングするのが困難で
ある。また３５０’Ｃ以上でコーテイング膜が溶融また
は蒸発するために、ボール形成にコーテイング膜の存在
は影響を与えず、ループ部分は樹脂封入時においてもコ
ーテイング膜は存在している。
尚、コーテイング材としては揮発性シリコーンゴム、及
びシリコーンオイル、非イオン系オイル等が用いられる
。
〔実施例〕
次に、本発明について図面を参照して説明する。第１図
は本発明の一実施例の断面図である。
導電性ワイヤー２の表面に均一にコーティングされてい
るコーテイング膜１は１μｍの膜厚を有しており、Ａｆ
ｆｌで成る導電性ワイヤー２をシリコーンオイルに浸漬
・乾燥して形成した。
第２図は本発明のボンディングワイヤーを用いた半導体
装置の断面図である。この装置は、半導体素子２の電極
とリード部３とをボンディングワイヤーで接続した後、
モールド樹脂で封止した構造になっている。ボンディン
グワイヤーは絶縁性被膜で覆われているため、半導体素
子を樹脂封止する際たるんで素子側面等不要な部分に接
触してもショートすることはない。
コーテイング材にモールド樹脂４との密差性を上げる材
質を添加すると、半導体装置の耐湿性を向上させる利点
がある。
〔発明の効果〕
以上説明したように本発明はワイヤー表面をボンディン
グ温度以上（３５０”Ｃ以上〉で溶融または蒸発する絶
縁性の材料でコーティングしたボンディング用ワイヤー
としたので、ワイヤーのループ強度を強くさせ、さらに
半導体素子エッチ部との接触、樹脂モールドしたときに
、ワイヤーが軟化によって変形ループの接触が発生した
場合においても、絶縁性のコーテイング膜により短絡、
及び断線が起こるのを防ぐ効果がある。更にワイヤー線
径を細くした場合であっても、はぼ従来ワイヤーの強度
が保たれ、またループの接触が発生しても短絡が起こら
ないため、ワイヤーの細線化によるコストダウンが計れ
る。
【図面の簡単な説明】
第１図は本発明のボンディング用ワイヤーの断面図、第
２図は本発明のボンディング用ワイヤーを用いた半導体
装置の縦断面図である。 １・・・コーティ ング膜、 ２・・・導電性ワイヤー リード部、 ・・・モールド樹脂、 ７・・・半導体装 子。

Claims (1)

    【特許請求の範囲】
  1. 　導電性ワイヤー表面を、ボンディング温度以上の温度
    で溶融又は蒸発する絶縁性材質でコーティングした構造
    を有することを特徴とする半導体装置用ボンディングワ
    イヤー。
JP1325121A 1989-12-14 1989-12-14 半導体装置用ボンディングワイヤー Pending JPH03185742A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1325121A JPH03185742A (ja) 1989-12-14 1989-12-14 半導体装置用ボンディングワイヤー

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1325121A JPH03185742A (ja) 1989-12-14 1989-12-14 半導体装置用ボンディングワイヤー

Publications (1)

Publication Number Publication Date
JPH03185742A true JPH03185742A (ja) 1991-08-13

Family

ID=18173321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1325121A Pending JPH03185742A (ja) 1989-12-14 1989-12-14 半導体装置用ボンディングワイヤー

Country Status (1)

Country Link
JP (1) JPH03185742A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0601323A1 (en) * 1992-12-10 1994-06-15 International Business Machines Corporation Integrated circuit chip composite
WO2002080272A3 (en) * 2001-03-30 2003-05-30 Intel Corp Insulated bond wire assembly process technology for integrated circuits
DE102005026241B4 (de) * 2005-06-07 2015-02-26 Epcos Ag Thermistor mit isolierten, lötbaren Anschlussdrähten

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0601323A1 (en) * 1992-12-10 1994-06-15 International Business Machines Corporation Integrated circuit chip composite
JPH06216183A (ja) * 1992-12-10 1994-08-05 Internatl Business Mach Corp <Ibm> Ｉｃチップの構成物及びその製造方法
US5656830A (en) * 1992-12-10 1997-08-12 International Business Machines Corp. Integrated circuit chip composite having a parylene coating
WO2002080272A3 (en) * 2001-03-30 2003-05-30 Intel Corp Insulated bond wire assembly process technology for integrated circuits
US6894398B2 (en) 2001-03-30 2005-05-17 Intel Corporation Insulated bond wire assembly for integrated circuits
DE102005026241B4 (de) * 2005-06-07 2015-02-26 Epcos Ag Thermistor mit isolierten, lötbaren Anschlussdrähten

Similar Documents

Publication Publication Date Title
JPH06314538A (ja) 回路保護用素子
KR100323194B1 (ko) 반도체장치 및 그 제조방법
WO1990008616A1 (en) Improved bond connection for components
JPH03190033A (ja) 非端末キャップ型電気ヒューズ
JPH03185742A (ja) 半導体装置用ボンディングワイヤー
US6242995B1 (en) Bead inductor and method of manufacturing same
JPH01201901A (ja) 電気デバイス及びはんだ接続部の保護方法
JPH02105513A (ja) ヒューズ付きチップ状固体電解コンデンサ
JP2000228455A (ja) Ｂｇａ型ｉｃパッケージ
JP2872525B2 (ja) 回路保護用素子
JPH02305409A (ja) 過負荷溶断形抵抗器
JP2000031195A (ja) 半導体装置およびその製造方法
JP2998484B2 (ja) 半導体装置用リードフレーム
JP2914569B1 (ja) 半導体素子の実装方法とその実装体
JPS595964Y2 (ja) Ｌｃ貫通形コンデンサ
KR920000225B1 (ko) 세라믹 콘덴서의 제조방법
TWI715895B (zh) 半導體結構及其製造方法
JPS61163644A (ja) 半導体装置の封止方法と封止部材
JPS62140447A (ja) Ｉｃ搭載用配線基板及びその製造方法
JPH0613465A (ja) 半導体装置
JPH05243070A (ja) 樹脂モールド電子部品及びその基板への装着方法
JP2832074B2 (ja) 温度ヒューズの製造方法
JPH0757614A (ja) 超小型薄膜回路保護用電子部品
JPH0521814Y2 (ja)
JPH02162713A (ja) ヒューズ付き固体電解コンデンサ