JPH031837B2 - - Google Patents
Info
- Publication number
- JPH031837B2 JPH031837B2 JP56099802A JP9980281A JPH031837B2 JP H031837 B2 JPH031837 B2 JP H031837B2 JP 56099802 A JP56099802 A JP 56099802A JP 9980281 A JP9980281 A JP 9980281A JP H031837 B2 JPH031837 B2 JP H031837B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- memory cell
- layer
- cell structure
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010410 layer Substances 0.000 claims description 72
- 230000015654 memory Effects 0.000 claims description 56
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 30
- 229920005591 polysilicon Polymers 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000002356 single layer Substances 0.000 claims description 4
- 210000004027 cell Anatomy 0.000 claims 32
- 238000000151 deposition Methods 0.000 claims 7
- 210000003850 cellular structure Anatomy 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 14
- 230000003068 static effect Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/164,285 US4471374A (en) | 1980-06-30 | 1980-06-30 | Single polycrystalline silicon memory cell |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5773968A JPS5773968A (en) | 1982-05-08 |
JPH031837B2 true JPH031837B2 (US06534493-20030318-C00166.png) | 1991-01-11 |
Family
ID=22593804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56099802A Granted JPS5773968A (en) | 1980-06-30 | 1981-06-29 | Memory cell structure and method of producing same |
Country Status (5)
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0087979B1 (en) * | 1982-03-03 | 1989-09-06 | Fujitsu Limited | A semiconductor memory device |
US4554644A (en) * | 1982-06-21 | 1985-11-19 | Fairchild Camera & Instrument Corporation | Static RAM cell |
JPS59155165A (ja) * | 1983-02-23 | 1984-09-04 | Toshiba Corp | 半導体記憶装置 |
JPS604253A (ja) * | 1983-06-23 | 1985-01-10 | Nec Corp | 半導体集積回路メモリ |
DE3330026A1 (de) * | 1983-08-19 | 1985-02-28 | Siemens AG, 1000 Berlin und 8000 München | Integrierte rs-flipflop-schaltung |
DE3330013A1 (de) * | 1983-08-19 | 1985-02-28 | Siemens AG, 1000 Berlin und 8000 München | Statische speicherzelle |
US4847732A (en) * | 1983-09-15 | 1989-07-11 | Mosaic Systems, Inc. | Wafer and method of making same |
DE3586450T2 (de) * | 1984-02-21 | 1993-03-18 | Environmental Res Inst | Kapazitive vorrichtung. |
JPS60206161A (ja) * | 1984-03-30 | 1985-10-17 | Toshiba Corp | 半導体集積回路 |
US5202751A (en) * | 1984-03-30 | 1993-04-13 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit |
KR940002772B1 (ko) * | 1984-08-31 | 1994-04-02 | 가부시기가이샤 히다찌세이사꾸쇼 | 반도체 집적회로 장치 및 그 제조방법 |
JPH0652782B2 (ja) * | 1984-08-31 | 1994-07-06 | 株式会社日立製作所 | 半導体集積回路装置 |
KR880700464A (ko) * | 1985-07-29 | 1988-03-15 | 마이클 와이.엡스타인 | 집적 회로에 대한 세 레벨 상호 연결 기법 |
JPH0746702B2 (ja) * | 1986-08-01 | 1995-05-17 | 株式会社日立製作所 | 半導体記憶装置 |
GB8700347D0 (en) * | 1987-01-08 | 1987-02-11 | Inmos Ltd | Memory cell |
US4920388A (en) * | 1987-02-17 | 1990-04-24 | Siliconix Incorporated | Power transistor with integrated gate resistor |
JPH061822B2 (ja) * | 1989-05-24 | 1994-01-05 | 株式会社日立製作所 | 半導体集積回路装置の製法 |
US5838044A (en) * | 1995-12-12 | 1998-11-17 | Advanced Micro Devices | Integrated circuit having improved polysilicon resistor structures |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53148398A (en) * | 1977-05-31 | 1978-12-23 | Texas Instruments Inc | Mos ic device |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4208781A (en) * | 1976-09-27 | 1980-06-24 | Texas Instruments Incorporated | Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer |
US4110776A (en) * | 1976-09-27 | 1978-08-29 | Texas Instruments Incorporated | Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer |
US4125854A (en) * | 1976-12-02 | 1978-11-14 | Mostek Corporation | Symmetrical cell layout for static RAM |
US4240097A (en) * | 1977-05-31 | 1980-12-16 | Texas Instruments Incorporated | Field-effect transistor structure in multilevel polycrystalline silicon |
US4246593A (en) * | 1979-01-02 | 1981-01-20 | Texas Instruments Incorporated | High density static memory cell with polysilicon resistors |
US4280271A (en) * | 1979-10-11 | 1981-07-28 | Texas Instruments Incorporated | Three level interconnect process for manufacture of integrated circuit devices |
US4322824A (en) * | 1979-11-13 | 1982-03-30 | Texas Instruments Incorporated | Static random access memory with merged bit lines |
-
1980
- 1980-06-30 US US06/164,285 patent/US4471374A/en not_active Expired - Lifetime
-
1981
- 1981-03-17 CA CA000373152A patent/CA1149950A/en not_active Expired
- 1981-06-25 EP EP81302869A patent/EP0043244B1/en not_active Expired
- 1981-06-25 DE DE8181302869T patent/DE3175339D1/de not_active Expired
- 1981-06-25 DE DE198181302869T patent/DE43244T1/de active Pending
- 1981-06-29 JP JP56099802A patent/JPS5773968A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53148398A (en) * | 1977-05-31 | 1978-12-23 | Texas Instruments Inc | Mos ic device |
Also Published As
Publication number | Publication date |
---|---|
US4471374A (en) | 1984-09-11 |
JPS5773968A (en) | 1982-05-08 |
EP0043244A3 (en) | 1983-07-20 |
DE43244T1 (de) | 1986-02-27 |
EP0043244A2 (en) | 1982-01-06 |
CA1149950A (en) | 1983-07-12 |
DE3175339D1 (en) | 1986-10-23 |
EP0043244B1 (en) | 1986-09-17 |
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