JPH0318356B2 - - Google Patents

Info

Publication number
JPH0318356B2
JPH0318356B2 JP56112025A JP11202581A JPH0318356B2 JP H0318356 B2 JPH0318356 B2 JP H0318356B2 JP 56112025 A JP56112025 A JP 56112025A JP 11202581 A JP11202581 A JP 11202581A JP H0318356 B2 JPH0318356 B2 JP H0318356B2
Authority
JP
Japan
Prior art keywords
film
thin film
electrode
source
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56112025A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5814575A (ja
Inventor
Kanetaka Sekiguchi
Seigo Togashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP56112025A priority Critical patent/JPS5814575A/ja
Priority to GB08221029A priority patent/GB2107115B/en
Publication of JPS5814575A publication Critical patent/JPS5814575A/ja
Priority to US06/621,324 priority patent/US4502204A/en
Publication of JPH0318356B2 publication Critical patent/JPH0318356B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

Landscapes

  • Formation Of Insulating Films (AREA)
JP56112025A 1981-07-17 1981-07-17 薄膜トランジスタの製造方法 Granted JPS5814575A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56112025A JPS5814575A (ja) 1981-07-17 1981-07-17 薄膜トランジスタの製造方法
GB08221029A GB2107115B (en) 1981-07-17 1982-07-19 Method of manufacturing insulated gate thin film effect transitors
US06/621,324 US4502204A (en) 1981-07-17 1984-06-15 Method of manufacturing insulated gate thin film field effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56112025A JPS5814575A (ja) 1981-07-17 1981-07-17 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS5814575A JPS5814575A (ja) 1983-01-27
JPH0318356B2 true JPH0318356B2 (enrdf_load_stackoverflow) 1991-03-12

Family

ID=14576106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56112025A Granted JPS5814575A (ja) 1981-07-17 1981-07-17 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS5814575A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS5814575A (ja) 1983-01-27

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