JPS5814575A - 薄膜トランジスタの製造方法 - Google Patents
薄膜トランジスタの製造方法Info
- Publication number
- JPS5814575A JPS5814575A JP56112025A JP11202581A JPS5814575A JP S5814575 A JPS5814575 A JP S5814575A JP 56112025 A JP56112025 A JP 56112025A JP 11202581 A JP11202581 A JP 11202581A JP S5814575 A JPS5814575 A JP S5814575A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrodes
- thin film
- substrate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56112025A JPS5814575A (ja) | 1981-07-17 | 1981-07-17 | 薄膜トランジスタの製造方法 |
| GB08221029A GB2107115B (en) | 1981-07-17 | 1982-07-19 | Method of manufacturing insulated gate thin film effect transitors |
| US06/621,324 US4502204A (en) | 1981-07-17 | 1984-06-15 | Method of manufacturing insulated gate thin film field effect transistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56112025A JPS5814575A (ja) | 1981-07-17 | 1981-07-17 | 薄膜トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5814575A true JPS5814575A (ja) | 1983-01-27 |
| JPH0318356B2 JPH0318356B2 (enrdf_load_stackoverflow) | 1991-03-12 |
Family
ID=14576106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56112025A Granted JPS5814575A (ja) | 1981-07-17 | 1981-07-17 | 薄膜トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5814575A (enrdf_load_stackoverflow) |
-
1981
- 1981-07-17 JP JP56112025A patent/JPS5814575A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0318356B2 (enrdf_load_stackoverflow) | 1991-03-12 |
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