JPH0318276B2 - - Google Patents
Info
- Publication number
- JPH0318276B2 JPH0318276B2 JP59035116A JP3511684A JPH0318276B2 JP H0318276 B2 JPH0318276 B2 JP H0318276B2 JP 59035116 A JP59035116 A JP 59035116A JP 3511684 A JP3511684 A JP 3511684A JP H0318276 B2 JPH0318276 B2 JP H0318276B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- capacitor
- tunnel
- voltage
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
Landscapes
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59035116A JPS60179999A (ja) | 1984-02-28 | 1984-02-28 | 不揮発性半導体記憶装置 |
| US06/659,191 US4630238A (en) | 1983-10-14 | 1984-10-09 | Semiconductor memory device |
| DE8484306978T DE3486094T2 (de) | 1983-10-14 | 1984-10-12 | Halbleiterspeicheranordnung. |
| EP84306978A EP0147019B1 (en) | 1983-10-14 | 1984-10-12 | Semiconductor memory device |
| EP91121355A EP0481532B1 (en) | 1983-10-14 | 1984-10-12 | Semiconductor memory device |
| DE3486418T DE3486418T2 (de) | 1983-10-14 | 1984-10-12 | Halbleiterspeicheranordnung |
| KR8406376A KR900006190B1 (en) | 1983-10-14 | 1984-10-13 | Semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59035116A JPS60179999A (ja) | 1984-02-28 | 1984-02-28 | 不揮発性半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60179999A JPS60179999A (ja) | 1985-09-13 |
| JPH0318276B2 true JPH0318276B2 (cs) | 1991-03-12 |
Family
ID=12432954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59035116A Granted JPS60179999A (ja) | 1983-10-14 | 1984-02-28 | 不揮発性半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60179999A (cs) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63229696A (ja) * | 1987-03-18 | 1988-09-26 | Nec Corp | 読み出し専用メモリを有する半導体装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5727493A (en) * | 1980-07-24 | 1982-02-13 | Fujitsu Ltd | Semiconductor storage device and its write-in method |
| JPS57150193A (en) * | 1981-03-13 | 1982-09-16 | Toshiba Corp | Non-volatile semiconductor memory device |
| US4434478A (en) * | 1981-11-27 | 1984-02-28 | International Business Machines Corporation | Programming floating gate devices |
-
1984
- 1984-02-28 JP JP59035116A patent/JPS60179999A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60179999A (ja) | 1985-09-13 |
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