JPH0318276B2 - - Google Patents

Info

Publication number
JPH0318276B2
JPH0318276B2 JP59035116A JP3511684A JPH0318276B2 JP H0318276 B2 JPH0318276 B2 JP H0318276B2 JP 59035116 A JP59035116 A JP 59035116A JP 3511684 A JP3511684 A JP 3511684A JP H0318276 B2 JPH0318276 B2 JP H0318276B2
Authority
JP
Japan
Prior art keywords
electrode
capacitor
tunnel
voltage
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59035116A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60179999A (ja
Inventor
Hideki Arakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59035116A priority Critical patent/JPS60179999A/ja
Priority to US06/659,191 priority patent/US4630238A/en
Priority to DE3486418T priority patent/DE3486418T2/de
Priority to EP84306978A priority patent/EP0147019B1/en
Priority to DE8484306978T priority patent/DE3486094T2/de
Priority to EP91121355A priority patent/EP0481532B1/en
Priority to KR8406376A priority patent/KR900006190B1/ko
Publication of JPS60179999A publication Critical patent/JPS60179999A/ja
Publication of JPH0318276B2 publication Critical patent/JPH0318276B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
JP59035116A 1983-10-14 1984-02-28 不揮発性半導体記憶装置 Granted JPS60179999A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP59035116A JPS60179999A (ja) 1984-02-28 1984-02-28 不揮発性半導体記憶装置
US06/659,191 US4630238A (en) 1983-10-14 1984-10-09 Semiconductor memory device
DE3486418T DE3486418T2 (de) 1983-10-14 1984-10-12 Halbleiterspeicheranordnung
EP84306978A EP0147019B1 (en) 1983-10-14 1984-10-12 Semiconductor memory device
DE8484306978T DE3486094T2 (de) 1983-10-14 1984-10-12 Halbleiterspeicheranordnung.
EP91121355A EP0481532B1 (en) 1983-10-14 1984-10-12 Semiconductor memory device
KR8406376A KR900006190B1 (en) 1983-10-14 1984-10-13 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59035116A JPS60179999A (ja) 1984-02-28 1984-02-28 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS60179999A JPS60179999A (ja) 1985-09-13
JPH0318276B2 true JPH0318276B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-03-12

Family

ID=12432954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59035116A Granted JPS60179999A (ja) 1983-10-14 1984-02-28 不揮発性半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS60179999A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63229696A (ja) * 1987-03-18 1988-09-26 Nec Corp 読み出し専用メモリを有する半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5727493A (en) * 1980-07-24 1982-02-13 Fujitsu Ltd Semiconductor storage device and its write-in method
JPS57150193A (en) * 1981-03-13 1982-09-16 Toshiba Corp Non-volatile semiconductor memory device
US4434478A (en) * 1981-11-27 1984-02-28 International Business Machines Corporation Programming floating gate devices

Also Published As

Publication number Publication date
JPS60179999A (ja) 1985-09-13

Similar Documents

Publication Publication Date Title
US5189641A (en) Non-volatile random access memory device
JP3431122B2 (ja) 半導体記憶装置
JPS61246995A (ja) 不揮発性ランダムアクセスメモリ装置
US4630238A (en) Semiconductor memory device
JPS6233672B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US20130114330A1 (en) Semiconductor memory device and driving method thereof
CN103714853B (zh) Nand型内容可寻址存储器
JP2654435B2 (ja) 不揮発性メモリー・セル
JPH0318276B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN103646666B (zh) Nor型内容可寻址存储器
JPH0516119B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS5961072A (ja) 不揮発性半導体記憶装置
JPS58128090A (ja) ダイナミツクｉｃメモリ
JPS5913117B2 (ja) 半導体メモリ
JPS6032981B2 (ja) ２進記憶装置
JPH05291534A (ja) 電荷蓄積素子を有する半導体装置
JPH031759B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2980463B2 (ja) 半導体メモリ装置の駆動方法
JPH0415556B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS611058A (ja) 不揮発性ｒａｍ
JPH039560B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH039559B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH033315B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2679718B2 (ja) フローティングゲート型電界効果トランジスタを使用したメモリ回路
EP0295036B1 (en) Semiconductor memory device