JPH0315852B2 - - Google Patents

Info

Publication number
JPH0315852B2
JPH0315852B2 JP57153617A JP15361782A JPH0315852B2 JP H0315852 B2 JPH0315852 B2 JP H0315852B2 JP 57153617 A JP57153617 A JP 57153617A JP 15361782 A JP15361782 A JP 15361782A JP H0315852 B2 JPH0315852 B2 JP H0315852B2
Authority
JP
Japan
Prior art keywords
photothyristor
triax
emitting diode
light emitting
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57153617A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5943630A (ja
Inventor
Hidekazu Awaji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP57153617A priority Critical patent/JPS5943630A/ja
Publication of JPS5943630A publication Critical patent/JPS5943630A/ja
Priority to US06/814,160 priority patent/US4658145A/en
Publication of JPH0315852B2 publication Critical patent/JPH0315852B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)
JP57153617A 1982-09-02 1982-09-02 ソリツドステ−トリレ− Granted JPS5943630A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57153617A JPS5943630A (ja) 1982-09-02 1982-09-02 ソリツドステ−トリレ−
US06/814,160 US4658145A (en) 1982-09-02 1985-12-23 Solid state relay

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57153617A JPS5943630A (ja) 1982-09-02 1982-09-02 ソリツドステ−トリレ−

Publications (2)

Publication Number Publication Date
JPS5943630A JPS5943630A (ja) 1984-03-10
JPH0315852B2 true JPH0315852B2 (US08080257-20111220-C00005.png) 1991-03-04

Family

ID=15566401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57153617A Granted JPS5943630A (ja) 1982-09-02 1982-09-02 ソリツドステ−トリレ−

Country Status (2)

Country Link
US (1) US4658145A (US08080257-20111220-C00005.png)
JP (1) JPS5943630A (US08080257-20111220-C00005.png)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62110317A (ja) * 1985-11-08 1987-05-21 Toshiba Corp 固体継電器
JPS62179601U (US08080257-20111220-C00005.png) * 1986-04-30 1987-11-14
JPS6327677A (ja) * 1986-07-22 1988-02-05 川重工事株式会社 立体駐輪場構造
JPS63107223A (ja) * 1986-10-23 1988-05-12 Mitsubishi Electric Corp トライアツクトリガ用光結合半導体素子
JPS6437136U (US08080257-20111220-C00005.png) * 1987-08-28 1989-03-06
US4906858A (en) * 1987-11-13 1990-03-06 Honeywell Inc. Controlled switching circuit
US5136213A (en) * 1989-06-26 1992-08-04 C&K Components, Inc. Motion detecting light controller system
US5338991A (en) * 1992-12-28 1994-08-16 Lu Chao Cheng High power solid state relay with input presence and polarity indication
US20050179271A1 (en) * 2004-02-13 2005-08-18 Gerry Kerr Golf ball retriever
CN103346759B (zh) * 2013-07-23 2016-01-13 郁百超 微功耗工频脉宽调制开关电源
JP6253439B2 (ja) * 2014-02-17 2017-12-27 ルネサスエレクトロニクス株式会社 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4931593A (US08080257-20111220-C00005.png) * 1972-07-24 1974-03-22
JPS5723266A (en) * 1980-07-18 1982-02-06 Nec Corp Photocontrol semiconductor switch

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4309605A (en) * 1979-10-02 1982-01-05 New Japan Radio Co., Ltd. Photo-reflective sensor
JPS57193964A (en) * 1981-05-20 1982-11-29 Toshiba Corp Switching device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4931593A (US08080257-20111220-C00005.png) * 1972-07-24 1974-03-22
JPS5723266A (en) * 1980-07-18 1982-02-06 Nec Corp Photocontrol semiconductor switch

Also Published As

Publication number Publication date
US4658145A (en) 1987-04-14
JPS5943630A (ja) 1984-03-10

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