JPH0314172B2 - - Google Patents
Info
- Publication number
- JPH0314172B2 JPH0314172B2 JP2871981A JP2871981A JPH0314172B2 JP H0314172 B2 JPH0314172 B2 JP H0314172B2 JP 2871981 A JP2871981 A JP 2871981A JP 2871981 A JP2871981 A JP 2871981A JP H0314172 B2 JPH0314172 B2 JP H0314172B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- layer
- pattern
- electron beam
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 25
- 239000011347 resin Substances 0.000 claims description 24
- 229920005989 resin Polymers 0.000 claims description 24
- 238000010894 electron beam technology Methods 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 59
- 239000007789 gas Substances 0.000 description 25
- 238000005530 etching Methods 0.000 description 17
- 239000010408 film Substances 0.000 description 17
- 239000010409 thin film Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- -1 chalcogenide compound Chemical class 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910005866 GeSe Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 125000004773 chlorofluoromethyl group Chemical group [H]C(F)(Cl)* 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000025 natural resin Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2871981A JPS57143826A (en) | 1981-02-28 | 1981-02-28 | Formation of resist pattern on gapped semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2871981A JPS57143826A (en) | 1981-02-28 | 1981-02-28 | Formation of resist pattern on gapped semiconductor substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57143826A JPS57143826A (en) | 1982-09-06 |
| JPH0314172B2 true JPH0314172B2 (de) | 1991-02-26 |
Family
ID=12256246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2871981A Granted JPS57143826A (en) | 1981-02-28 | 1981-02-28 | Formation of resist pattern on gapped semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57143826A (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59163828A (ja) * | 1983-03-09 | 1984-09-14 | Toshiba Corp | 微細パタ−ンの形成方法 |
| JPS6097624A (ja) * | 1983-11-01 | 1985-05-31 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| JPS63129622A (ja) * | 1986-11-20 | 1988-06-02 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2691175B2 (ja) * | 1989-09-08 | 1997-12-17 | 日本電信電話株式会社 | パターン化酸化物超伝導膜形成法 |
| US9632411B2 (en) * | 2013-03-14 | 2017-04-25 | Applied Materials, Inc. | Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor |
| US20140272684A1 (en) | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
-
1981
- 1981-02-28 JP JP2871981A patent/JPS57143826A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57143826A (en) | 1982-09-06 |
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