JPH031379B2 - - Google Patents
Info
- Publication number
- JPH031379B2 JPH031379B2 JP9256886A JP9256886A JPH031379B2 JP H031379 B2 JPH031379 B2 JP H031379B2 JP 9256886 A JP9256886 A JP 9256886A JP 9256886 A JP9256886 A JP 9256886A JP H031379 B2 JPH031379 B2 JP H031379B2
- Authority
- JP
- Japan
- Prior art keywords
- pulsed
- evaporation
- molecular beam
- vapor deposition
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 41
- 238000001704 evaporation Methods 0.000 claims description 33
- 230000008020 evaporation Effects 0.000 claims description 30
- 238000007738 vacuum evaporation Methods 0.000 claims description 14
- 230000000903 blocking effect Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 45
- 238000007740 vapor deposition Methods 0.000 description 30
- 239000010408 film Substances 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229920002449 FKM Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- -1 Viton Chemical compound 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9256886A JPS62250167A (ja) | 1986-04-22 | 1986-04-22 | パルス分子線蒸着方法とその装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9256886A JPS62250167A (ja) | 1986-04-22 | 1986-04-22 | パルス分子線蒸着方法とその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62250167A JPS62250167A (ja) | 1987-10-31 |
| JPH031379B2 true JPH031379B2 (enrdf_load_stackoverflow) | 1991-01-10 |
Family
ID=14058028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9256886A Granted JPS62250167A (ja) | 1986-04-22 | 1986-04-22 | パルス分子線蒸着方法とその装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62250167A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2771810B1 (fr) * | 1997-11-28 | 2000-02-11 | Sgs Thomson Microelectronics | Amelioration de la mesure d'epaisseur en temps reel d'un materiau depose dans une installation de depot par evaporation |
-
1986
- 1986-04-22 JP JP9256886A patent/JPS62250167A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62250167A (ja) | 1987-10-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |