JPS626746B2 - - Google Patents

Info

Publication number
JPS626746B2
JPS626746B2 JP57234165A JP23416582A JPS626746B2 JP S626746 B2 JPS626746 B2 JP S626746B2 JP 57234165 A JP57234165 A JP 57234165A JP 23416582 A JP23416582 A JP 23416582A JP S626746 B2 JPS626746 B2 JP S626746B2
Authority
JP
Japan
Prior art keywords
sputtering
deposited
thin film
sputtering device
vapor deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57234165A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59123768A (ja
Inventor
Yasunori Taga
Tadayoshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Central R&D Labs Inc
Original Assignee
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Central R&D Labs Inc filed Critical Toyota Central R&D Labs Inc
Priority to JP57234165A priority Critical patent/JPS59123768A/ja
Publication of JPS59123768A publication Critical patent/JPS59123768A/ja
Publication of JPS626746B2 publication Critical patent/JPS626746B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Surface Treatment Of Glass (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
JP57234165A 1982-12-28 1982-12-28 多元同時スパッタリング装置 Granted JPS59123768A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57234165A JPS59123768A (ja) 1982-12-28 1982-12-28 多元同時スパッタリング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57234165A JPS59123768A (ja) 1982-12-28 1982-12-28 多元同時スパッタリング装置

Publications (2)

Publication Number Publication Date
JPS59123768A JPS59123768A (ja) 1984-07-17
JPS626746B2 true JPS626746B2 (enrdf_load_stackoverflow) 1987-02-13

Family

ID=16966676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57234165A Granted JPS59123768A (ja) 1982-12-28 1982-12-28 多元同時スパッタリング装置

Country Status (1)

Country Link
JP (1) JPS59123768A (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8334369D0 (en) * 1983-12-23 1984-02-01 Ion Tech Ltd Sputter deposition of alloys & c
JPS61153274A (ja) * 1984-12-27 1986-07-11 Matsushita Electric Ind Co Ltd スパツタ装置
JPH02232366A (ja) * 1989-03-06 1990-09-14 Ulvac Corp スパッタ装置
US5346600A (en) * 1992-08-14 1994-09-13 Hughes Aircraft Company Plasma-enhanced magnetron-sputtered deposition of materials
GB0127251D0 (en) * 2001-11-13 2002-01-02 Nordiko Ltd Apparatus
EP1624502B1 (en) 2004-08-04 2015-11-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display device, and electronic appliance
US7745989B2 (en) 2005-06-30 2010-06-29 Semiconductor Energy Laboratory Co., Ltd Light emitting element, light emitting device, and electronic apparatus
JP5132092B2 (ja) * 2005-06-30 2013-01-30 株式会社半導体エネルギー研究所 発光素子の製造方法
JP2015110814A (ja) * 2013-12-06 2015-06-18 信越化学工業株式会社 スパッタ成膜方法、スパッタ装置、フォトマスクブランクの製造方法及びフォトマスクブランク
CN105420679B (zh) * 2015-11-16 2018-04-03 江苏中腾石英材料科技有限公司 一种孪生对靶磁控溅射制备覆铜陶瓷基板的装置及方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5379776A (en) * 1976-12-24 1978-07-14 Ulvac Corp Sputtering apparatus

Also Published As

Publication number Publication date
JPS59123768A (ja) 1984-07-17

Similar Documents

Publication Publication Date Title
US6139964A (en) Plasma enhancement apparatus and method for physical vapor deposition
Mattox Physical vapor deposition (PVD) processes
EP0940481B1 (en) Method and apparatus for forming a thin film of a metal compound
Mattox Physical vapor deposition (PVD) processes
WO2010018639A1 (ja) 蒸着装置及び薄膜デバイスの製造方法
US5849371A (en) Laser and laser-assisted free electron beam deposition apparatus and method
JPS626746B2 (enrdf_load_stackoverflow)
JP3842166B2 (ja) 電子サイクロトロン共鳴を利用した常温化学蒸着システム及びこれを利用した複合金属膜の製造方法
Mattox Ion plating
US4424103A (en) Thin film deposition
EP0707663A1 (en) Sputtering device
JPH0625846A (ja) 複合スパッタリング装置
JPS626638B2 (enrdf_load_stackoverflow)
JPS6210269A (ja) 真空蒸着装置及び薄膜の製造方法
JPH03174306A (ja) 酸化物超電導体の製造方法
JP2007507618A (ja) ルチル型二酸化チタンを高速で堆積させるための装置及び方法
RU2653399C2 (ru) Способ нанесения покрытия из аморфного оксида алюминия реактивным испарением алюминия в разряде низкого давления
JPH0314906B2 (enrdf_load_stackoverflow)
Volpian et al. Magnetron technology of production of gradient optical coatings
JPS63203760A (ja) ガラス基板面への無機質膜の形成方法及びその装置
JPH0582467B2 (enrdf_load_stackoverflow)
JP3026578B2 (ja) 薄膜形成装置
WO2024143399A1 (ja) 成膜装置
JPH01255669A (ja) ビームスパッタ法による多成分物質膜の形成方法
JP2507963B2 (ja) 酸化物薄膜の製造方法