JPH0517309B2 - - Google Patents

Info

Publication number
JPH0517309B2
JPH0517309B2 JP60110935A JP11093585A JPH0517309B2 JP H0517309 B2 JPH0517309 B2 JP H0517309B2 JP 60110935 A JP60110935 A JP 60110935A JP 11093585 A JP11093585 A JP 11093585A JP H0517309 B2 JPH0517309 B2 JP H0517309B2
Authority
JP
Japan
Prior art keywords
ionization
film
atoms
laser mirror
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60110935A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61268016A (ja
Inventor
Masahiro Hanai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11093585A priority Critical patent/JPS61268016A/ja
Publication of JPS61268016A publication Critical patent/JPS61268016A/ja
Publication of JPH0517309B2 publication Critical patent/JPH0517309B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP11093585A 1985-05-23 1985-05-23 レーザーミラー膜の形成方法 Granted JPS61268016A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11093585A JPS61268016A (ja) 1985-05-23 1985-05-23 レーザーミラー膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11093585A JPS61268016A (ja) 1985-05-23 1985-05-23 レーザーミラー膜の形成方法

Publications (2)

Publication Number Publication Date
JPS61268016A JPS61268016A (ja) 1986-11-27
JPH0517309B2 true JPH0517309B2 (enrdf_load_stackoverflow) 1993-03-08

Family

ID=14548318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11093585A Granted JPS61268016A (ja) 1985-05-23 1985-05-23 レーザーミラー膜の形成方法

Country Status (1)

Country Link
JP (1) JPS61268016A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6375790B1 (en) 1999-07-19 2002-04-23 Epion Corporation Adaptive GCIB for smoothing surfaces

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6048831B2 (ja) * 1978-06-22 1985-10-29 日本電気株式会社 バブル用パルス電流駆動装置
JPS58181159A (ja) * 1982-04-17 1983-10-22 Nec Corp 状態履歴記憶回路

Also Published As

Publication number Publication date
JPS61268016A (ja) 1986-11-27

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