JPH0313754B2 - - Google Patents

Info

Publication number
JPH0313754B2
JPH0313754B2 JP58065824A JP6582483A JPH0313754B2 JP H0313754 B2 JPH0313754 B2 JP H0313754B2 JP 58065824 A JP58065824 A JP 58065824A JP 6582483 A JP6582483 A JP 6582483A JP H0313754 B2 JPH0313754 B2 JP H0313754B2
Authority
JP
Japan
Prior art keywords
power supply
voltage
diode
channel transistor
breakdown voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58065824A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59191371A (ja
Inventor
Kazumichi Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58065824A priority Critical patent/JPS59191371A/ja
Publication of JPS59191371A publication Critical patent/JPS59191371A/ja
Publication of JPH0313754B2 publication Critical patent/JPH0313754B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58065824A 1983-04-14 1983-04-14 相補型ｍｏｓ電界効果装置 Granted JPS59191371A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58065824A JPS59191371A (ja) 1983-04-14 1983-04-14 相補型ｍｏｓ電界効果装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58065824A JPS59191371A (ja) 1983-04-14 1983-04-14 相補型ｍｏｓ電界効果装置

Publications (2)

Publication Number Publication Date
JPS59191371A JPS59191371A (ja) 1984-10-30
JPH0313754B2 true JPH0313754B2 (enrdf_load_stackoverflow) 1991-02-25

Family

ID=13298157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58065824A Granted JPS59191371A (ja) 1983-04-14 1983-04-14 相補型ｍｏｓ電界効果装置

Country Status (1)

Country Link
JP (1) JPS59191371A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102607375A (zh) * 2012-03-22 2012-07-25 王建 轴承径向游隙测量装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02150072A (ja) * 1988-11-30 1990-06-08 Fuji Electric Co Ltd 入力保護回路を有する半導体装置
FR2708788B1 (fr) * 1993-08-06 1995-10-27 Sgs Thomson Microelectronics Protection d'un circuit intégré à l'encontre de surcharges électrostatiques.
JPH1126600A (ja) * 1997-07-08 1999-01-29 Mitsubishi Electric Corp 半導体集積回路装置およびツェナーダイオード
JP7316034B2 (ja) * 2018-11-14 2023-07-27 ローム株式会社 ドライバ回路

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6056310B2 (ja) * 1975-06-12 1985-12-09 富士通株式会社 半導体装置
JPS5491067A (en) * 1977-12-28 1979-07-19 Nec Corp Input protective circuit
JPS574151A (en) * 1980-06-11 1982-01-09 Hitachi Ltd Mos integrated circuit device
JPS6050062B2 (ja) * 1982-03-19 1985-11-06 三菱電機株式会社 半導体集積回路装置
JPS58197870A (ja) * 1982-05-14 1983-11-17 Hitachi Ltd 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102607375A (zh) * 2012-03-22 2012-07-25 王建 轴承径向游隙测量装置

Also Published As

Publication number Publication date
JPS59191371A (ja) 1984-10-30

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