JPS59191371A - 相補型ｍｏｓ電界効果装置 - Google Patents

相補型ｍｏｓ電界効果装置

Info

Publication number
JPS59191371A
JPS59191371A JP58065824A JP6582483A JPS59191371A JP S59191371 A JPS59191371 A JP S59191371A JP 58065824 A JP58065824 A JP 58065824A JP 6582483 A JP6582483 A JP 6582483A JP S59191371 A JPS59191371 A JP S59191371A
Authority
JP
Japan
Prior art keywords
diode
resistance
drain
diodes
protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58065824A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0313754B2 (enrdf_load_stackoverflow
Inventor
Kazumichi Aoki
青木　一道
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58065824A priority Critical patent/JPS59191371A/ja
Publication of JPS59191371A publication Critical patent/JPS59191371A/ja
Publication of JPH0313754B2 publication Critical patent/JPH0313754B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58065824A 1983-04-14 1983-04-14 相補型ｍｏｓ電界効果装置 Granted JPS59191371A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58065824A JPS59191371A (ja) 1983-04-14 1983-04-14 相補型ｍｏｓ電界効果装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58065824A JPS59191371A (ja) 1983-04-14 1983-04-14 相補型ｍｏｓ電界効果装置

Publications (2)

Publication Number Publication Date
JPS59191371A true JPS59191371A (ja) 1984-10-30
JPH0313754B2 JPH0313754B2 (enrdf_load_stackoverflow) 1991-02-25

Family

ID=13298157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58065824A Granted JPS59191371A (ja) 1983-04-14 1983-04-14 相補型ｍｏｓ電界効果装置

Country Status (1)

Country Link
JP (1) JPS59191371A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02150072A (ja) * 1988-11-30 1990-06-08 Fuji Electric Co Ltd 入力保護回路を有する半導体装置
EP0637843A1 (fr) * 1993-08-06 1995-02-08 STMicroelectronics S.A. Protection d'un circuit intégré à l'encontre de surcharges électrostatiques
US5936288A (en) * 1997-07-08 1999-08-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device and low breakdown voltage zener diode
JP2020080500A (ja) * 2018-11-14 2020-05-28 ローム株式会社 ドライバ回路

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102607375A (zh) * 2012-03-22 2012-07-25 王建 轴承径向游隙测量装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147187A (en) * 1975-06-12 1976-12-17 Fujitsu Ltd Semiconductor device
JPS5491067A (en) * 1977-12-28 1979-07-19 Nec Corp Input protective circuit
JPS574151A (en) * 1980-06-11 1982-01-09 Hitachi Ltd Mos integrated circuit device
JPS58162054A (ja) * 1982-03-19 1983-09-26 Mitsubishi Electric Corp 半導体集積回路装置
JPS58197870A (ja) * 1982-05-14 1983-11-17 Hitachi Ltd 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147187A (en) * 1975-06-12 1976-12-17 Fujitsu Ltd Semiconductor device
JPS5491067A (en) * 1977-12-28 1979-07-19 Nec Corp Input protective circuit
JPS574151A (en) * 1980-06-11 1982-01-09 Hitachi Ltd Mos integrated circuit device
JPS58162054A (ja) * 1982-03-19 1983-09-26 Mitsubishi Electric Corp 半導体集積回路装置
JPS58197870A (ja) * 1982-05-14 1983-11-17 Hitachi Ltd 半導体装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02150072A (ja) * 1988-11-30 1990-06-08 Fuji Electric Co Ltd 入力保護回路を有する半導体装置
EP0637843A1 (fr) * 1993-08-06 1995-02-08 STMicroelectronics S.A. Protection d'un circuit intégré à l'encontre de surcharges électrostatiques
FR2708788A1 (fr) * 1993-08-06 1995-02-10 Sgs Thomson Microelectronics Protection d'un circuit intégré à l'encontre de surcharges électrostatiques.
US5515225A (en) * 1993-08-06 1996-05-07 Sgs-Thomson Microelectronics S.A. Integrated circuit protected against electrostatic overvoltages
US5936288A (en) * 1997-07-08 1999-08-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device and low breakdown voltage zener diode
JP2020080500A (ja) * 2018-11-14 2020-05-28 ローム株式会社 ドライバ回路

Also Published As

Publication number Publication date
JPH0313754B2 (enrdf_load_stackoverflow) 1991-02-25

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