JPH03128668U - - Google Patents

Info

Publication number
JPH03128668U
JPH03128668U JP3740690U JP3740690U JPH03128668U JP H03128668 U JPH03128668 U JP H03128668U JP 3740690 U JP3740690 U JP 3740690U JP 3740690 U JP3740690 U JP 3740690U JP H03128668 U JPH03128668 U JP H03128668U
Authority
JP
Japan
Prior art keywords
susceptor
inert gas
featured
introducing
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3740690U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3740690U priority Critical patent/JPH03128668U/ja
Publication of JPH03128668U publication Critical patent/JPH03128668U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【図面の簡単な説明】
第1図、第2図、第3図は本考案によるサセプ
タの断面図、第4図、第5図は従来のサセプタの
断面図である。 1…電極、4…ヒーター、10…カバー、12
…不活性ガス導入パイプ、13…排気パイプ。

Claims (1)

    【実用新案登録請求の範囲】
  1. スパツタ装置等の半導体薄膜製造装置において
    、それぞれ接合された電極、セラミツク絶縁チユ
    ーブ、フランジと、大気側に設置された加熱機構
    及び、これら構成物の内部に不活性ガスを導入す
    る機構を有することを特徴としたサセプタ。
JP3740690U 1990-04-06 1990-04-06 Pending JPH03128668U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3740690U JPH03128668U (ja) 1990-04-06 1990-04-06

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3740690U JPH03128668U (ja) 1990-04-06 1990-04-06

Publications (1)

Publication Number Publication Date
JPH03128668U true JPH03128668U (ja) 1991-12-25

Family

ID=31544483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3740690U Pending JPH03128668U (ja) 1990-04-06 1990-04-06

Country Status (1)

Country Link
JP (1) JPH03128668U (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100440425C (zh) * 2005-06-23 2008-12-03 东京毅力科创株式会社 载置台装置的安装结构、处理装置和馈电线间放电防止方法
JP2012256916A (ja) * 2000-07-07 2012-12-27 Applied Materials Inc 複数領域のヒータを大気から隔離する方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012256916A (ja) * 2000-07-07 2012-12-27 Applied Materials Inc 複数領域のヒータを大気から隔離する方法
CN100440425C (zh) * 2005-06-23 2008-12-03 东京毅力科创株式会社 载置台装置的安装结构、处理装置和馈电线间放电防止方法
JP4736564B2 (ja) * 2005-06-23 2011-07-27 東京エレクトロン株式会社 載置台装置の取付構造及び処理装置

Similar Documents

Publication Publication Date Title
JPH03128668U (ja)
JPS6139937U (ja) 拡散炉型気相成長装置
JPH0370351U (ja)
JPS62203023U (ja)
JPS5971168U (ja) センサ装置
JPS6319565U (ja)
JPS6450458U (ja)
JPS61188352U (ja)
JPH0162356U (ja)
JPS5860108U (ja) 高周波加熱装置
JPH03111561U (ja)
JPS62172146U (ja)
JPS6294626U (ja)
JPH04750U (ja)
JPS5899592U (ja) 真空断熱二重殻体装置
JPS61187375U (ja)
JPS62132169U (ja)
JPS62203263U (ja)
JPS5330274A (en) Semiconductor device
JPS63110792U (ja)
JPS6425610U (ja)
JPH0214359U (ja)
JPH01110256U (ja)
JPS58170750U (ja) 陰極線管用電熱オ−ブン
JPH0229521U (ja)